GB8905910D0 - Photosensitive semiconductor,method for making same and electronic switch comprising same - Google Patents
Photosensitive semiconductor,method for making same and electronic switch comprising sameInfo
- Publication number
- GB8905910D0 GB8905910D0 GB898905910A GB8905910A GB8905910D0 GB 8905910 D0 GB8905910 D0 GB 8905910D0 GB 898905910 A GB898905910 A GB 898905910A GB 8905910 A GB8905910 A GB 8905910A GB 8905910 D0 GB8905910 D0 GB 8905910D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- same
- electronic switch
- photosensitive semiconductor
- making
- making same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
- H01L31/162—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. a light emitting diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
- Photovoltaic Devices (AREA)
- Manufacture Of Switches (AREA)
- Push-Button Switches (AREA)
- Liquid Crystal (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB898905910A GB8905910D0 (en) | 1989-03-15 | 1989-03-15 | Photosensitive semiconductor,method for making same and electronic switch comprising same |
DE4007979A DE4007979A1 (de) | 1989-03-15 | 1990-03-13 | Elektronischer schalter mit einem lichtempfindlichen halbleiter |
FR9003161A FR2644629A1 (en) | 1989-03-15 | 1990-03-13 | Electronic switch comprising a photosensitive semiconductor |
ES9000751A ES2021503A6 (es) | 1989-03-15 | 1990-03-13 | Un conmutador electronico que comprende un semiconductor fotosensible. |
CA002012110A CA2012110A1 (fr) | 1989-03-15 | 1990-03-14 | Commutateur electronique comportant un semiconducteur photosensible |
IT67184A IT1241191B (it) | 1989-03-15 | 1990-03-14 | Interruttore elettronico comprendente un semiconduttore fotosensibile |
AU51326/90A AU626391B2 (en) | 1989-03-15 | 1990-03-14 | Electronic switch comprising a photosensitive semiconductor |
BE9000288A BE1002672A3 (fr) | 1989-03-15 | 1990-03-14 | Interrupteur electronique comprenant un semi-conducteur photosensible. |
GB9005695A GB2229315B (en) | 1989-03-15 | 1990-03-14 | Electronic switch comprising a photosensitive semiconductor |
KR1019900003377A KR900015360A (ko) | 1989-03-15 | 1990-03-14 | 감광반도체를 가지는 전자스위치 |
JP2065516A JPH02292874A (ja) | 1989-03-15 | 1990-03-15 | 電子スイッチ |
ZA902005A ZA902005B (en) | 1989-03-15 | 1990-03-15 | Electronic switch comprising a photosensitive semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB898905910A GB8905910D0 (en) | 1989-03-15 | 1989-03-15 | Photosensitive semiconductor,method for making same and electronic switch comprising same |
Publications (1)
Publication Number | Publication Date |
---|---|
GB8905910D0 true GB8905910D0 (en) | 1989-04-26 |
Family
ID=10653354
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB898905910A Pending GB8905910D0 (en) | 1989-03-15 | 1989-03-15 | Photosensitive semiconductor,method for making same and electronic switch comprising same |
GB9005695A Expired - Lifetime GB2229315B (en) | 1989-03-15 | 1990-03-14 | Electronic switch comprising a photosensitive semiconductor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9005695A Expired - Lifetime GB2229315B (en) | 1989-03-15 | 1990-03-14 | Electronic switch comprising a photosensitive semiconductor |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPH02292874A (fr) |
KR (1) | KR900015360A (fr) |
AU (1) | AU626391B2 (fr) |
BE (1) | BE1002672A3 (fr) |
CA (1) | CA2012110A1 (fr) |
DE (1) | DE4007979A1 (fr) |
ES (1) | ES2021503A6 (fr) |
FR (1) | FR2644629A1 (fr) |
GB (2) | GB8905910D0 (fr) |
IT (1) | IT1241191B (fr) |
ZA (1) | ZA902005B (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9018957D0 (en) * | 1990-08-31 | 1990-10-17 | Champion Spark Plug Europ | Electronic switch comprising a photosensitive semiconductor |
EP0627554B1 (fr) * | 1993-05-28 | 1997-05-28 | Bayerische Motoren Werke Aktiengesellschaft, Patentabteilung AJ-3 | Système d'allumage sans distributeur avec des commutateurs de haute tension contrÔlés par lumière |
RU2721303C1 (ru) * | 2019-12-03 | 2020-05-18 | Самсунг Электроникс Ко., Лтд. | Оптически-управляемый переключатель миллиметрового диапазона со встроенным источником света, основанный на линии передачи с полупроводниковой подложкой |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR83703E (fr) * | 1962-07-28 | 1964-10-02 | Electronique Et D Automatique | Elément logique à photorésistance |
GB1251226A (fr) * | 1967-11-20 | 1971-10-27 | ||
AU499679B2 (en) * | 1976-04-08 | 1979-04-26 | Photon Power Inc | Photovoltaic cell |
US4388483A (en) * | 1981-09-08 | 1983-06-14 | Monosolar, Inc. | Thin film heterojunction photovoltaic cells and methods of making the same |
US4577114A (en) * | 1984-05-17 | 1986-03-18 | The United States Of America As Represented By The Secretary Of The Army | High power optical switch for microsecond switching |
-
1989
- 1989-03-15 GB GB898905910A patent/GB8905910D0/en active Pending
-
1990
- 1990-03-13 ES ES9000751A patent/ES2021503A6/es not_active Expired - Lifetime
- 1990-03-13 DE DE4007979A patent/DE4007979A1/de not_active Ceased
- 1990-03-13 FR FR9003161A patent/FR2644629A1/fr active Granted
- 1990-03-14 AU AU51326/90A patent/AU626391B2/en not_active Ceased
- 1990-03-14 GB GB9005695A patent/GB2229315B/en not_active Expired - Lifetime
- 1990-03-14 KR KR1019900003377A patent/KR900015360A/ko not_active Application Discontinuation
- 1990-03-14 IT IT67184A patent/IT1241191B/it active IP Right Grant
- 1990-03-14 BE BE9000288A patent/BE1002672A3/fr not_active IP Right Cessation
- 1990-03-14 CA CA002012110A patent/CA2012110A1/fr not_active Abandoned
- 1990-03-15 JP JP2065516A patent/JPH02292874A/ja active Pending
- 1990-03-15 ZA ZA902005A patent/ZA902005B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE4007979A1 (de) | 1990-09-20 |
AU626391B2 (en) | 1992-07-30 |
BE1002672A3 (fr) | 1991-04-30 |
ES2021503A6 (es) | 1991-11-01 |
JPH02292874A (ja) | 1990-12-04 |
KR900015360A (ko) | 1990-10-26 |
ZA902005B (en) | 1990-12-28 |
GB2229315B (en) | 1992-12-23 |
CA2012110A1 (fr) | 1990-09-15 |
IT9067184A1 (it) | 1991-09-14 |
GB9005695D0 (en) | 1990-05-09 |
FR2644629A1 (en) | 1990-09-21 |
GB2229315A (en) | 1990-09-19 |
FR2644629B1 (fr) | 1992-01-03 |
AU5132690A (en) | 1990-09-20 |
IT1241191B (it) | 1993-12-29 |
IT9067184A0 (it) | 1990-03-14 |
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GB8905910D0 (en) | Photosensitive semiconductor,method for making same and electronic switch comprising same |