GB8905910D0 - Photosensitive semiconductor,method for making same and electronic switch comprising same - Google Patents

Photosensitive semiconductor,method for making same and electronic switch comprising same

Info

Publication number
GB8905910D0
GB8905910D0 GB898905910A GB8905910A GB8905910D0 GB 8905910 D0 GB8905910 D0 GB 8905910D0 GB 898905910 A GB898905910 A GB 898905910A GB 8905910 A GB8905910 A GB 8905910A GB 8905910 D0 GB8905910 D0 GB 8905910D0
Authority
GB
United Kingdom
Prior art keywords
same
electronic switch
photosensitive semiconductor
making
making same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB898905910A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Champion Spark Plug Europe SA
Original Assignee
Champion Spark Plug Europe SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Champion Spark Plug Europe SA filed Critical Champion Spark Plug Europe SA
Priority to GB898905910A priority Critical patent/GB8905910D0/en
Publication of GB8905910D0 publication Critical patent/GB8905910D0/en
Priority to ES9000751A priority patent/ES2021503A6/es
Priority to DE4007979A priority patent/DE4007979A1/de
Priority to FR9003161A priority patent/FR2644629A1/fr
Priority to CA002012110A priority patent/CA2012110A1/en
Priority to BE9000288A priority patent/BE1002672A3/fr
Priority to GB9005695A priority patent/GB2229315B/en
Priority to AU51326/90A priority patent/AU626391B2/en
Priority to KR1019900003377A priority patent/KR900015360A/ko
Priority to IT67184A priority patent/IT1241191B/it
Priority to ZA902005A priority patent/ZA902005B/xx
Priority to JP2065516A priority patent/JPH02292874A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
GB898905910A 1989-03-15 1989-03-15 Photosensitive semiconductor,method for making same and electronic switch comprising same Pending GB8905910D0 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
GB898905910A GB8905910D0 (en) 1989-03-15 1989-03-15 Photosensitive semiconductor,method for making same and electronic switch comprising same
ES9000751A ES2021503A6 (es) 1989-03-15 1990-03-13 Un conmutador electronico que comprende un semiconductor fotosensible.
DE4007979A DE4007979A1 (de) 1989-03-15 1990-03-13 Elektronischer schalter mit einem lichtempfindlichen halbleiter
FR9003161A FR2644629A1 (en) 1989-03-15 1990-03-13 Electronic switch comprising a photosensitive semiconductor
IT67184A IT1241191B (it) 1989-03-15 1990-03-14 Interruttore elettronico comprendente un semiconduttore fotosensibile
CA002012110A CA2012110A1 (en) 1989-03-15 1990-03-14 Electronic switch comprising a photosensitive semiconductor
BE9000288A BE1002672A3 (fr) 1989-03-15 1990-03-14 Interrupteur electronique comprenant un semi-conducteur photosensible.
GB9005695A GB2229315B (en) 1989-03-15 1990-03-14 Electronic switch comprising a photosensitive semiconductor
AU51326/90A AU626391B2 (en) 1989-03-15 1990-03-14 Electronic switch comprising a photosensitive semiconductor
KR1019900003377A KR900015360A (ko) 1989-03-15 1990-03-14 감광반도체를 가지는 전자스위치
ZA902005A ZA902005B (en) 1989-03-15 1990-03-15 Electronic switch comprising a photosensitive semiconductor
JP2065516A JPH02292874A (ja) 1989-03-15 1990-03-15 電子スイッチ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898905910A GB8905910D0 (en) 1989-03-15 1989-03-15 Photosensitive semiconductor,method for making same and electronic switch comprising same

Publications (1)

Publication Number Publication Date
GB8905910D0 true GB8905910D0 (en) 1989-04-26

Family

ID=10653354

Family Applications (2)

Application Number Title Priority Date Filing Date
GB898905910A Pending GB8905910D0 (en) 1989-03-15 1989-03-15 Photosensitive semiconductor,method for making same and electronic switch comprising same
GB9005695A Expired - Lifetime GB2229315B (en) 1989-03-15 1990-03-14 Electronic switch comprising a photosensitive semiconductor

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9005695A Expired - Lifetime GB2229315B (en) 1989-03-15 1990-03-14 Electronic switch comprising a photosensitive semiconductor

Country Status (11)

Country Link
JP (1) JPH02292874A (enrdf_load_stackoverflow)
KR (1) KR900015360A (enrdf_load_stackoverflow)
AU (1) AU626391B2 (enrdf_load_stackoverflow)
BE (1) BE1002672A3 (enrdf_load_stackoverflow)
CA (1) CA2012110A1 (enrdf_load_stackoverflow)
DE (1) DE4007979A1 (enrdf_load_stackoverflow)
ES (1) ES2021503A6 (enrdf_load_stackoverflow)
FR (1) FR2644629A1 (enrdf_load_stackoverflow)
GB (2) GB8905910D0 (enrdf_load_stackoverflow)
IT (1) IT1241191B (enrdf_load_stackoverflow)
ZA (1) ZA902005B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9018957D0 (en) * 1990-08-31 1990-10-17 Champion Spark Plug Europ Electronic switch comprising a photosensitive semiconductor
EP0627554B1 (de) * 1993-05-28 1997-05-28 Bayerische Motoren Werke Aktiengesellschaft, Patentabteilung AJ-3 Verteilerloses Zündsystem mit lichtgesteuerten Hochspannungsschaltern
RU2721303C1 (ru) * 2019-12-03 2020-05-18 Самсунг Электроникс Ко., Лтд. Оптически-управляемый переключатель миллиметрового диапазона со встроенным источником света, основанный на линии передачи с полупроводниковой подложкой

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR83703E (fr) * 1962-07-28 1964-10-02 Electronique Et D Automatique Elément logique à photorésistance
GB1251226A (enrdf_load_stackoverflow) * 1967-11-20 1971-10-27
AU499679B2 (en) * 1976-04-08 1979-04-26 Photon Power Inc Photovoltaic cell
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4577114A (en) * 1984-05-17 1986-03-18 The United States Of America As Represented By The Secretary Of The Army High power optical switch for microsecond switching

Also Published As

Publication number Publication date
GB9005695D0 (en) 1990-05-09
IT9067184A0 (it) 1990-03-14
IT1241191B (it) 1993-12-29
ZA902005B (en) 1990-12-28
ES2021503A6 (es) 1991-11-01
AU5132690A (en) 1990-09-20
GB2229315B (en) 1992-12-23
GB2229315A (en) 1990-09-19
KR900015360A (ko) 1990-10-26
BE1002672A3 (fr) 1991-04-30
IT9067184A1 (it) 1991-09-14
DE4007979A1 (de) 1990-09-20
FR2644629A1 (en) 1990-09-21
AU626391B2 (en) 1992-07-30
JPH02292874A (ja) 1990-12-04
CA2012110A1 (en) 1990-09-15
FR2644629B1 (enrdf_load_stackoverflow) 1992-01-03

Similar Documents

Publication Publication Date Title
GB2226922B (en) Circuit
GB2232829B (en) Semiconductor integrated circuit
GB2230395B (en) Semiconductor relay circuit
KR960010061B1 (en) Integrated circuit device manufacturing method
EP0432482A3 (en) Semiconductor memory circuit apparatus
KR960008512B1 (en) Integrated circuit interconnecting method
EP0410473A3 (en) Semiconductor integrated circuit
EP0416809A3 (en) Reduced size etching method for integrated circuits
EP0484013A3 (en) Method for manufacturing an integrated circuit
EP0412609A3 (en) Integrator circuit
AU6888891A (en) Micromagnetic circuit
EP0416798A3 (en) Manufacturing method for semiconductor device
EP0431522A3 (en) Method for manufacturing semiconductor device
HUT54847A (en) Method and circuit arrangement for operating xenon-metal-halide lamp
GB2229833B (en) Semiconductor integrated circuit
GB8910755D0 (en) Integrator circuit
EP0408353A3 (en) Semiconductor integrated circuit
GB8910756D0 (en) Integrator circuit
GB8921555D0 (en) Superheterodyne circuit
EP0474439A3 (en) Circuit test method
EP0451286A4 (en) Integrated circuit device
EP0424018A3 (en) Integrated circuit field isolation process
ZA897262B (en) Metallization process for an integrated circuit
EP0434898A3 (en) Semiconductor integrated circuit
EP0418786A3 (en) Circuit breaker