GB8816796D0 - Latchup & electrostatic discharge protection structure - Google Patents

Latchup & electrostatic discharge protection structure

Info

Publication number
GB8816796D0
GB8816796D0 GB8816796A GB8816796A GB8816796D0 GB 8816796 D0 GB8816796 D0 GB 8816796D0 GB 8816796 A GB8816796 A GB 8816796A GB 8816796 A GB8816796 A GB 8816796A GB 8816796 D0 GB8816796 D0 GB 8816796D0
Authority
GB
United Kingdom
Prior art keywords
latchup
electrostatic discharge
protection structure
discharge protection
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB8816796A
Other versions
GB2210197B (en
GB2210197A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Semiconductor ULC
Original Assignee
Mitel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Corp filed Critical Mitel Corp
Publication of GB8816796D0 publication Critical patent/GB8816796D0/en
Publication of GB2210197A publication Critical patent/GB2210197A/en
Application granted granted Critical
Publication of GB2210197B publication Critical patent/GB2210197B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB8816796A 1987-09-24 1988-07-14 Latchup and electrostatic discharge protection structure Expired GB2210197B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000547801A CA1289267C (en) 1987-09-24 1987-09-24 Latchup and electrostatic discharge protection structure

Publications (3)

Publication Number Publication Date
GB8816796D0 true GB8816796D0 (en) 1988-08-17
GB2210197A GB2210197A (en) 1989-06-01
GB2210197B GB2210197B (en) 1990-12-19

Family

ID=4136515

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8816796A Expired GB2210197B (en) 1987-09-24 1988-07-14 Latchup and electrostatic discharge protection structure

Country Status (4)

Country Link
JP (1) JP2873008B2 (en)
CA (1) CA1289267C (en)
DE (1) DE3832253C2 (en)
GB (1) GB2210197B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039502U (en) * 1989-06-12 1991-01-29
FR2649830B1 (en) * 1989-07-13 1994-05-27 Sgs Thomson Microelectronics CMOS INTEGRATED CIRCUIT STRUCTURE PROTECTED FROM ELECTROSTATIC DISCHARGE
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
DE10026742B4 (en) * 2000-05-30 2007-11-22 Infineon Technologies Ag In both directions blocking semiconductor switching element
US6583476B1 (en) * 2002-06-28 2003-06-24 Micrel, Inc. Electrostatic discharge protection for integrated semiconductor devices using channel stop field plates

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5869124A (en) * 1981-10-20 1983-04-25 Toshiba Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
CA1289267C (en) 1991-09-17
GB2210197B (en) 1990-12-19
JPH01106464A (en) 1989-04-24
GB2210197A (en) 1989-06-01
DE3832253A1 (en) 1989-04-27
DE3832253C2 (en) 2000-07-13
JP2873008B2 (en) 1999-03-24

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060714