GB871831A - Improvements in or relating to the production of elemental silicon - Google Patents

Improvements in or relating to the production of elemental silicon

Info

Publication number
GB871831A
GB871831A GB132858A GB132858A GB871831A GB 871831 A GB871831 A GB 871831A GB 132858 A GB132858 A GB 132858A GB 132858 A GB132858 A GB 132858A GB 871831 A GB871831 A GB 871831A
Authority
GB
United Kingdom
Prior art keywords
silicon
metal
zone
vapour
halide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB132858A
Inventor
Ignace Joseph Krehma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Priority to GB132858A priority Critical patent/GB871831A/en
Publication of GB871831A publication Critical patent/GB871831A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

<PICT:0871831/III/1> In the production of silicon of at least 99.99% purity by passing a silicon halide vapour, preferably silicon tetrachloride, and zinc or cadmium vapour into an enclosed reaction zone at a temperature above the boiling point of the metal and below the melting point of silicon, to form silicon which is deposited in the zone, and zinc or cadmium halide, which may be condensed outside the zone, the silicon halide and metal vapour reactants are purified by passing them into the reaction zone via an enclosed purification zone, in communication with the reaction zone, in which a pool of the boiling metal is maintained. The temperature of the silicon halide vapour here introduced is below the boiling point of the metal. It is thought that the small quantity of silicon which is formed in the purification zone, and is deposited in and about the pool, carries with it the impurities present in the reactants. In the Figure, a reservoir 1, which may be purged with an inert gas, feeds molten zinc or cadmium to vaporizer 4, from which the vapours are passed to purification zone 9 containing a pool of boiling metal 11. Silicon halide is vaporized in vaporizer 12, and is preferably introduced into the purification zone at 100 DEG C.-300 DEG C. The mixed vapours then pass into the reaction zone 15, which is preferably maintained at 907 DEG C.-1100 DEG C. Pure silicon is deposited, and metal halide is collected in by-product collecting zone 20. When the reactor is almost full of silicon the supply of metal vapour is cut off and the reactor is allowed to cool, preferably to 50 DEG C.-200 DEG C., the flow of silicon halide vapour being maintained. If desired, all or part of the silicon halide vapour employed may be bubbled through the metal pool. The apparatus is preferably constructed of silica. The silicon has improved electrical properties.
GB132858A 1958-01-14 1958-01-14 Improvements in or relating to the production of elemental silicon Expired GB871831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB132858A GB871831A (en) 1958-01-14 1958-01-14 Improvements in or relating to the production of elemental silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB132858A GB871831A (en) 1958-01-14 1958-01-14 Improvements in or relating to the production of elemental silicon

Publications (1)

Publication Number Publication Date
GB871831A true GB871831A (en) 1961-07-05

Family

ID=9720090

Family Applications (1)

Application Number Title Priority Date Filing Date
GB132858A Expired GB871831A (en) 1958-01-14 1958-01-14 Improvements in or relating to the production of elemental silicon

Country Status (1)

Country Link
GB (1) GB871831A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0103312A2 (en) * 1982-06-22 1984-03-21 SAMIM Società Azionaria Minero-Metallurgica S.p.A. Process for producing high-purity metals
WO2010022601A1 (en) * 2008-08-31 2010-03-04 北京中晶华业科技有限公司 Process for producing highly pure silicon

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0103312A2 (en) * 1982-06-22 1984-03-21 SAMIM Società Azionaria Minero-Metallurgica S.p.A. Process for producing high-purity metals
EP0103312A3 (en) * 1982-06-22 1986-01-22 SAMIM Società Azionaria Minero-Metallurgica S.p.A. Process for producing high-purity metals
WO2010022601A1 (en) * 2008-08-31 2010-03-04 北京中晶华业科技有限公司 Process for producing highly pure silicon

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