GB871831A - Improvements in or relating to the production of elemental silicon - Google Patents
Improvements in or relating to the production of elemental siliconInfo
- Publication number
- GB871831A GB871831A GB132858A GB132858A GB871831A GB 871831 A GB871831 A GB 871831A GB 132858 A GB132858 A GB 132858A GB 132858 A GB132858 A GB 132858A GB 871831 A GB871831 A GB 871831A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- metal
- zone
- vapour
- halide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
<PICT:0871831/III/1> In the production of silicon of at least 99.99% purity by passing a silicon halide vapour, preferably silicon tetrachloride, and zinc or cadmium vapour into an enclosed reaction zone at a temperature above the boiling point of the metal and below the melting point of silicon, to form silicon which is deposited in the zone, and zinc or cadmium halide, which may be condensed outside the zone, the silicon halide and metal vapour reactants are purified by passing them into the reaction zone via an enclosed purification zone, in communication with the reaction zone, in which a pool of the boiling metal is maintained. The temperature of the silicon halide vapour here introduced is below the boiling point of the metal. It is thought that the small quantity of silicon which is formed in the purification zone, and is deposited in and about the pool, carries with it the impurities present in the reactants. In the Figure, a reservoir 1, which may be purged with an inert gas, feeds molten zinc or cadmium to vaporizer 4, from which the vapours are passed to purification zone 9 containing a pool of boiling metal 11. Silicon halide is vaporized in vaporizer 12, and is preferably introduced into the purification zone at 100 DEG C.-300 DEG C. The mixed vapours then pass into the reaction zone 15, which is preferably maintained at 907 DEG C.-1100 DEG C. Pure silicon is deposited, and metal halide is collected in by-product collecting zone 20. When the reactor is almost full of silicon the supply of metal vapour is cut off and the reactor is allowed to cool, preferably to 50 DEG C.-200 DEG C., the flow of silicon halide vapour being maintained. If desired, all or part of the silicon halide vapour employed may be bubbled through the metal pool. The apparatus is preferably constructed of silica. The silicon has improved electrical properties.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB132858A GB871831A (en) | 1958-01-14 | 1958-01-14 | Improvements in or relating to the production of elemental silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB132858A GB871831A (en) | 1958-01-14 | 1958-01-14 | Improvements in or relating to the production of elemental silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
GB871831A true GB871831A (en) | 1961-07-05 |
Family
ID=9720090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB132858A Expired GB871831A (en) | 1958-01-14 | 1958-01-14 | Improvements in or relating to the production of elemental silicon |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB871831A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0103312A2 (en) * | 1982-06-22 | 1984-03-21 | SAMIM Società Azionaria Minero-Metallurgica S.p.A. | Process for producing high-purity metals |
WO2010022601A1 (en) * | 2008-08-31 | 2010-03-04 | 北京中晶华业科技有限公司 | Process for producing highly pure silicon |
-
1958
- 1958-01-14 GB GB132858A patent/GB871831A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0103312A2 (en) * | 1982-06-22 | 1984-03-21 | SAMIM Società Azionaria Minero-Metallurgica S.p.A. | Process for producing high-purity metals |
EP0103312A3 (en) * | 1982-06-22 | 1986-01-22 | SAMIM Società Azionaria Minero-Metallurgica S.p.A. | Process for producing high-purity metals |
WO2010022601A1 (en) * | 2008-08-31 | 2010-03-04 | 北京中晶华业科技有限公司 | Process for producing highly pure silicon |
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