GB866199A - Improvements in or relating to processes and apparatus for the production of semi-conductor crystals - Google Patents
Improvements in or relating to processes and apparatus for the production of semi-conductor crystalsInfo
- Publication number
- GB866199A GB866199A GB25391/57A GB2539157A GB866199A GB 866199 A GB866199 A GB 866199A GB 25391/57 A GB25391/57 A GB 25391/57A GB 2539157 A GB2539157 A GB 2539157A GB 866199 A GB866199 A GB 866199A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- substance
- gas
- carrier gas
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
866,199. Semi-conductors. STE1VIENS & HALSKE A.G. Aug. 12, 1957 [Aug. 10, 1956], No. 25391/57. Class 37. A process for incorporating a doping substance into a semi-conductor melt comprises passing the substance in gaseous form from a storage vessel in which the substance is under pressure through a capillary nozzle into a stream of carrier gas consisting of hydrogen or of other gas inert to the doping substance and to the semi-conductor melt and wherein said substance is conducted together with said carrier gas to a treatment vessel in which the melt is located. The crystal 3 is heated in a reaction chamber to melt it. The doping substance may be BCl a and is contained in a storage vessel 6. The crystal may be of Si or Ge or of a compound of two or more different metals, the hydrogen can be replaced by a rare gas and any other boron halide such as the bromide BBr 3 can be used. The incorporation of the impurity or " doping " is to give the crystal a particular resistivity to increase the life of the charge carriers or to produce a crystal of a particular conductivity type, and the doping substance is generally distributed uniformly over the surface. In the particular process described the silicon crystal 3 is zone-melted, that is, successive zones of a vertically moving crystal are melted by a high-frequency coil 4. The proportions of carrier gas and "impurity gas" can be adjusted by the pressure in 6, by adjusting the size of the capillary nozzle, e.g. by a needle valve, and by adjusting the rate of flow of the hydrogen or other carrier gas. The final " doped " crystals have accurately-reproducible resistivities over a wide range, e.g. between 1 and 50 ohms/em. In a modification, crystal 3 can be melted in a crucible. In an example a silicon crystal with 10 atoms per cent of boron gives a resistivity of 10 ohms/cm. Prior art methods comprising the steps of conducting hydrogen or a rare gas over a heated liquid halide or mixing the carrier gas with halide gas and then reducing the proportion of the halide by freezing, are referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE866199X | 1956-08-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB866199A true GB866199A (en) | 1961-04-26 |
Family
ID=6801976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB25391/57A Expired GB866199A (en) | 1956-08-10 | 1957-08-12 | Improvements in or relating to processes and apparatus for the production of semi-conductor crystals |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB866199A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DK86569C (en) * | 1956-09-14 | 1958-11-24 | Odelberg & Olson Ab | Folding shovel. |
-
1957
- 1957-08-12 GB GB25391/57A patent/GB866199A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DK86569C (en) * | 1956-09-14 | 1958-11-24 | Odelberg & Olson Ab | Folding shovel. |
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