GB864120A - Improvements in or relating to semi-conductor devices - Google Patents
Improvements in or relating to semi-conductor devicesInfo
- Publication number
- GB864120A GB864120A GB1329357A GB1329357A GB864120A GB 864120 A GB864120 A GB 864120A GB 1329357 A GB1329357 A GB 1329357A GB 1329357 A GB1329357 A GB 1329357A GB 864120 A GB864120 A GB 864120A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- wafer
- semi
- edge
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 239000005030 aluminium foil Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 239000002826 coolant Substances 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
864,120. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. April 25, 1957 [April 26, 1956], No. 13293/57. Class 37. In a semi-conductor device comprising a monocrystalline semi-conductor wafer with a first electrode and an associated PN junction extending over one face, and an electrode arrangement on the opposite face, the shortest distance of the edge of the first electrode from the outermost edge of said electrode arrangement being more than ten times larger than the wafer thickness. In one embodiment a PN junction device is made by assembling in superposed relationship a molybdenum or tungsten base-plate 5, a foil 4 of gold doped with 1% antimony, a wafer 2 of monocrystalline P-type silicon, and an aluminium foil 3, embedding the assembly in an inert material such as powdered graphite or magnesium and heating to fuse the parts together to form the device illustrated in the left-hand half of Fig. 1. On account of the geometry of the arrangement any short-circuit across the exposed edge of the PN junction (shown as a dotted line) is in series with a highresistance path to the edge of the ohmic electrode 3. This resistance may be further increased by reducing the thickness of the wafer beyond electrode 3 by grinding or corrosion and by making the wafer of high resistivity material. In a modification the gold electrode extends over the edges of the wafer to form a thin peripheral ring on the upper surface thereof. The device may be cooled by forming plate 5 with cooling fins or with ducts for fluid coolants, or by fixing the plate to a copper block of high heat capacity. A further embodiment consists of a transistor (Fig. 3) in which the junctionforming electrode 4 serves as collector. The emitter electrode 6 is in the form of an annulus which is disposed between and concentric with a circular electrode 3a and annular electrode 3b which are connected together to form the base electrode. Specification 864,121 is referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES48482A DE1046782B (en) | 1956-04-26 | 1956-04-26 | Semiconductor arrangement with a disk-shaped, essentially monocrystalline semiconductor base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB864120A true GB864120A (en) | 1961-03-29 |
Family
ID=7486876
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1329357A Expired GB864120A (en) | 1956-04-26 | 1957-04-25 | Improvements in or relating to semi-conductor devices |
| GB3678260A Expired GB864121A (en) | 1956-04-26 | 1957-04-25 | Improvements in or relating to semi-conductor devices |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3678260A Expired GB864121A (en) | 1956-04-26 | 1957-04-25 | Improvements in or relating to semi-conductor devices |
Country Status (6)
| Country | Link |
|---|---|
| CH (1) | CH352410A (en) |
| DE (1) | DE1046782B (en) |
| FR (1) | FR1173654A (en) |
| GB (2) | GB864120A (en) |
| NL (2) | NL6401835A (en) |
| SE (1) | SE308930B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1105522B (en) * | 1958-11-12 | 1961-04-27 | Licentia Gmbh | Transistor with a disk-shaped semiconductor body |
| US3063879A (en) * | 1959-02-26 | 1962-11-13 | Westinghouse Electric Corp | Configuration for semiconductor devices |
| DE2412924C3 (en) * | 1974-03-18 | 1981-09-17 | Kausov, Sergej Fedorovič, Moskva | Method of manufacturing a semiconductor diode |
| JPH0215652A (en) * | 1988-07-01 | 1990-01-19 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL180221B (en) * | 1952-07-29 | Charbonnages Ste Chimique | PROCESS FOR PREPARING A POLYAMINOAMIDE HARDENING AGENT FOR EPOXY RESINS; PROCESS FOR PREPARING A WATER DIVIDED HARDENING AGENT; PROCESS FOR PREPARING AN EPOXY RESIN COMPOSITION CONTAINING SUCH HARDENING AGENT AND AN OBJECT FACING A COATING LAYER OBTAINED FROM SUCH EPOXY RESIN COMPOSITION. |
-
0
- NL NL216645D patent/NL216645A/xx unknown
-
1956
- 1956-04-26 DE DES48482A patent/DE1046782B/en active Pending
-
1957
- 1957-04-24 CH CH352410D patent/CH352410A/en unknown
- 1957-04-25 GB GB1329357A patent/GB864120A/en not_active Expired
- 1957-04-25 GB GB3678260A patent/GB864121A/en not_active Expired
- 1957-04-25 FR FR1173654D patent/FR1173654A/en not_active Expired
-
1964
- 1964-02-26 NL NL6401835A patent/NL6401835A/xx unknown
-
1965
- 1965-07-12 SE SE918865A patent/SE308930B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR1173654A (en) | 1959-02-27 |
| SE308930B (en) | 1969-03-03 |
| DE1046782B (en) | 1958-12-18 |
| NL6401835A (en) | 1966-09-26 |
| CH352410A (en) | 1961-02-28 |
| GB864121A (en) | 1961-03-29 |
| NL216645A (en) |
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