GB8623954D0 - Vertical resistor - Google Patents

Vertical resistor

Info

Publication number
GB8623954D0
GB8623954D0 GB868623954A GB8623954A GB8623954D0 GB 8623954 D0 GB8623954 D0 GB 8623954D0 GB 868623954 A GB868623954 A GB 868623954A GB 8623954 A GB8623954 A GB 8623954A GB 8623954 D0 GB8623954 D0 GB 8623954D0
Authority
GB
United Kingdom
Prior art keywords
vertical resistor
resistor
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB868623954A
Other versions
GB2186116A (en
GB2186116B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB8623954D0 publication Critical patent/GB8623954D0/en
Publication of GB2186116A publication Critical patent/GB2186116A/en
Application granted granted Critical
Publication of GB2186116B publication Critical patent/GB2186116B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
GB8623954A 1986-02-03 1986-10-06 Plasma enhanced chemical vapor deposited vertical resistor Expired GB2186116B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82531486A 1986-02-03 1986-02-03

Publications (3)

Publication Number Publication Date
GB8623954D0 true GB8623954D0 (en) 1986-11-12
GB2186116A GB2186116A (en) 1987-08-05
GB2186116B GB2186116B (en) 1989-11-22

Family

ID=25243686

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8623954A Expired GB2186116B (en) 1986-02-03 1986-10-06 Plasma enhanced chemical vapor deposited vertical resistor

Country Status (4)

Country Link
JP (1) JPS62186557A (en)
CN (1) CN1005880B (en)
DE (1) DE3702409A1 (en)
GB (1) GB2186116B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713124A (en) * 2019-10-25 2021-04-27 三菱电机株式会社 Semiconductor device with a plurality of semiconductor chips

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62291956A (en) * 1986-06-12 1987-12-18 Matsushita Electric Ind Co Ltd Semiconductor device
JPH0727980B2 (en) * 1988-07-19 1995-03-29 三菱電機株式会社 Semiconductor device having high resistance layer
US6222328B1 (en) 1998-04-21 2001-04-24 Sony Corporation Horizontal deflection circuit
DE10223954A1 (en) * 2002-05-29 2003-12-11 Infineon Technologies Ag Plasma-excited chemical vapor deposition process for the deposition of silicon nitride or silicon oxynitride, process for producing a layer arrangement and layer arrangement
WO2015195109A1 (en) * 2014-06-18 2015-12-23 Intel Corporation Pillar resistor structures for integrated circuitry

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513426B2 (en) * 1974-06-18 1980-04-09
US4575923A (en) * 1983-04-06 1986-03-18 North American Philips Corporation Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer
JPS618966A (en) * 1984-06-22 1986-01-16 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Intermetallic compound semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713124A (en) * 2019-10-25 2021-04-27 三菱电机株式会社 Semiconductor device with a plurality of semiconductor chips

Also Published As

Publication number Publication date
CN1005880B (en) 1989-11-22
GB2186116A (en) 1987-08-05
GB2186116B (en) 1989-11-22
JPS62186557A (en) 1987-08-14
DE3702409A1 (en) 1987-08-06
CN86107982A (en) 1987-08-12

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19931006