GB8520743D0 - Memory device - Google Patents

Memory device

Info

Publication number
GB8520743D0
GB8520743D0 GB858520743A GB8520743A GB8520743D0 GB 8520743 D0 GB8520743 D0 GB 8520743D0 GB 858520743 A GB858520743 A GB 858520743A GB 8520743 A GB8520743 A GB 8520743A GB 8520743 D0 GB8520743 D0 GB 8520743D0
Authority
GB
United Kingdom
Prior art keywords
memory device
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB858520743A
Other versions
GB2163616A (en
GB2163616B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB8520743D0 publication Critical patent/GB8520743D0/en
Publication of GB2163616A publication Critical patent/GB2163616A/en
Application granted granted Critical
Publication of GB2163616B publication Critical patent/GB2163616B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
GB8520743A 1984-08-22 1985-08-19 A memory device Expired GB2163616B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59173243A JPS6151692A (en) 1984-08-22 1984-08-22 Memory device

Publications (3)

Publication Number Publication Date
GB8520743D0 true GB8520743D0 (en) 1985-09-25
GB2163616A GB2163616A (en) 1986-02-26
GB2163616B GB2163616B (en) 1989-05-24

Family

ID=15956809

Family Applications (2)

Application Number Title Priority Date Filing Date
GB858518670A Pending GB8518670D0 (en) 1984-08-22 1985-07-24 Memory device
GB8520743A Expired GB2163616B (en) 1984-08-22 1985-08-19 A memory device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB858518670A Pending GB8518670D0 (en) 1984-08-22 1985-07-24 Memory device

Country Status (4)

Country Link
JP (1) JPS6151692A (en)
KR (2) KR860002099A (en)
DE (1) DE3530088A1 (en)
GB (2) GB8518670D0 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63144488A (en) * 1986-12-06 1988-06-16 Fujitsu Ltd Semiconductor storage device
JP3085380B2 (en) * 1987-09-04 2000-09-04 株式会社日立製作所 Semiconductor memory
US5305268A (en) * 1990-12-13 1994-04-19 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with column equilibrate on change of data during a write cycle
US5297090A (en) * 1990-12-13 1994-03-22 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with column decoded bit line equilibrate
JP2795074B2 (en) * 1992-07-16 1998-09-10 日本電気株式会社 Dynamic RAM
JPH0718194U (en) * 1993-08-27 1995-03-31 ロザイ工業株式会社 Can dryer oven

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2712735B1 (en) * 1977-03-23 1978-09-14 Ibm Deutschland Read / write access circuit to memory cells of a memory and method for their operation
JPS5827915B2 (en) * 1978-07-28 1983-06-13 富士通株式会社 reset circuit
JPS5782279A (en) * 1980-11-04 1982-05-22 Fujitsu Ltd Semiconductor storage device
JPS5956292A (en) * 1982-09-24 1984-03-31 Hitachi Ltd Semiconductor storage device

Also Published As

Publication number Publication date
KR860002099A (en) 1986-03-26
KR870002654A (en) 1987-04-06
GB2163616A (en) 1986-02-26
GB8518670D0 (en) 1985-08-29
GB2163616B (en) 1989-05-24
JPS6151692A (en) 1986-03-14
DE3530088A1 (en) 1986-03-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee