GB8512341D0 - Bipolar semiconductor device - Google Patents

Bipolar semiconductor device

Info

Publication number
GB8512341D0
GB8512341D0 GB858512341A GB8512341A GB8512341D0 GB 8512341 D0 GB8512341 D0 GB 8512341D0 GB 858512341 A GB858512341 A GB 858512341A GB 8512341 A GB8512341 A GB 8512341A GB 8512341 D0 GB8512341 D0 GB 8512341D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
bipolar semiconductor
bipolar
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB858512341A
Other versions
GB2175443A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB08512341A priority Critical patent/GB2175443A/en
Publication of GB8512341D0 publication Critical patent/GB8512341D0/en
Publication of GB2175443A publication Critical patent/GB2175443A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
GB08512341A 1985-05-15 1985-05-15 Bipolar semiconductor device Withdrawn GB2175443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08512341A GB2175443A (en) 1985-05-15 1985-05-15 Bipolar semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08512341A GB2175443A (en) 1985-05-15 1985-05-15 Bipolar semiconductor device

Publications (2)

Publication Number Publication Date
GB8512341D0 true GB8512341D0 (en) 1985-06-19
GB2175443A GB2175443A (en) 1986-11-26

Family

ID=10579193

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08512341A Withdrawn GB2175443A (en) 1985-05-15 1985-05-15 Bipolar semiconductor device

Country Status (1)

Country Link
GB (1) GB2175443A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101931001B (en) * 2009-06-24 2012-05-30 湖北台基半导体股份有限公司 Asymmetrical fast thyristor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458367A (en) * 1964-07-18 1969-07-29 Fujitsu Ltd Method of manufacture of superhigh frequency transistor
DE2004345C3 (en) * 1970-01-30 1978-10-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method of amplifying '"*" "" "" electrical signals and using a transistor to carry them through
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors

Also Published As

Publication number Publication date
GB2175443A (en) 1986-11-26

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)