GB836908A - Improvements in and relating to the electro-deposition of metals - Google Patents
Improvements in and relating to the electro-deposition of metalsInfo
- Publication number
- GB836908A GB836908A GB9298/57A GB929857A GB836908A GB 836908 A GB836908 A GB 836908A GB 9298/57 A GB9298/57 A GB 9298/57A GB 929857 A GB929857 A GB 929857A GB 836908 A GB836908 A GB 836908A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal
- deposited
- bath
- melting
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 title abstract 19
- 239000002184 metal Substances 0.000 title abstract 19
- 150000002739 metals Chemical group 0.000 title abstract 4
- 238000004070 electrodeposition Methods 0.000 title abstract 3
- 238000002844 melting Methods 0.000 abstract 8
- 239000010953 base metal Substances 0.000 abstract 7
- 150000003839 salts Chemical class 0.000 abstract 6
- -1 iodide ions Chemical class 0.000 abstract 5
- 239000004411 aluminium Substances 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 150000003842 bromide salts Chemical class 0.000 abstract 3
- 150000003841 chloride salts Chemical class 0.000 abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 150000004694 iodide salts Chemical class 0.000 abstract 3
- 230000008018 melting Effects 0.000 abstract 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 150000001768 cations Chemical class 0.000 abstract 2
- 239000003085 diluting agent Substances 0.000 abstract 2
- 150000002222 fluorine compounds Chemical class 0.000 abstract 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000011777 magnesium Substances 0.000 abstract 2
- 229910052749 magnesium Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 1
- 229910019142 PO4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052783 alkali metal Inorganic materials 0.000 abstract 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 abstract 1
- 229910001516 alkali metal iodide Inorganic materials 0.000 abstract 1
- 235000019270 ammonium chloride Nutrition 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 150000001642 boronic acid derivatives Chemical class 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 abstract 1
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 abstract 1
- 235000021317 phosphate Nutrition 0.000 abstract 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 abstract 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 abstract 1
- 235000005074 zinc chloride Nutrition 0.000 abstract 1
- 239000011592 zinc chloride Substances 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Coating With Molten Metal (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
836,908. Electrodeposition of metals. PHILCO CORPORATION. March 21, 1957 [March 21, 1956], No. 9298/57. Class 41. A method of plating base metal, such as aluminium, titanium, magnesium, germanium, silicon, hafnium, beryllium or zirconium comprises immersing the base metal in a molten salt bath comprising ions of metal having a melting point below that of the base metal, iodide ions and fluoride ions, the bath being at a temperature above the melting point of the lower-melting metal but below the melting point of the base metal, impressing a voltage between the base metal and another electrode with the base metal as anode, whereby the base metal is etched and oxide on the surface thereof is removed, and reversing the voltage whereby the lower-melting metal deposits thereon. Specified lower-melting metals are indium, tin, lead zinc cadmium, bismuth, thallium and alloys of two or more of these metals. The ions of the metal to be deposited may be provided by a salt of the metal. Chlorides, bromides, iodides, fluorides, borates and phosphates may be used. The fluoride ions may be provided in whole or in part by use of a fluoride of the lower-melting metal to be deposited, as in whole or in part by use of a fluoride having a cation other than the metal to be deposited. The iodide ions may be provided in whole or in part by use of an iodide of the lower-melting metal to be deposited or in whole or in part by use of an iodide having a cation other than the metal to be deposited. Ammonium or alkali metal fluorides or iodides may be used. The bath may consist wholly of fluorides and iodides of the metal to be deposited; or some or all of the metal to be deposited may be provided by other salts such as chlorides and bromides. There may be present in the bath, as diluent or solvent, another salt or other salts of ammonium or of a metal which, under the conditions of operation. will not become deposited. Specified diluent or solvent salts are alkali metal borates, chlorides and bromides, ammonium borate, ammonium chloride and zinc chloride. The other electrode in the bath may consist of carbon or a metal the same as that to be deposited, when it will be in molten form and a conducting wire, suitably insulated from the bath, such as a nickel wire in a glass sleeve, may be used to make contact with the pool of molten metal. Examples describe the electrodeposition of indium on aluminium, magnesium, titanium or germanium; tin on germanium or silica; and indiumcadmium alloy on aluminium. Aluminium when metal coated may then be soldered by normal methods.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US572826A US2873233A (en) | 1956-03-21 | 1956-03-21 | Method of electrodepositing metals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB836908A true GB836908A (en) | 1960-06-09 |
Family
ID=24289507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9298/57A Expired GB836908A (en) | 1956-03-21 | 1957-03-21 | Improvements in and relating to the electro-deposition of metals |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US2873233A (en) |
| GB (1) | GB836908A (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL126074C (en) * | 1957-07-17 | |||
| LU37495A1 (en) * | 1958-08-07 | |||
| NL250202A (en) * | 1959-04-15 | |||
| US3048528A (en) * | 1959-11-23 | 1962-08-07 | Titanium Metals Corp | Descaling titanium and titanium alloy articles |
| US3236751A (en) * | 1961-05-19 | 1966-02-22 | Matsushita Electric Ind Co Ltd | Aluminum deposition from an anhydrous fusible salt electrolyte |
| US3282821A (en) * | 1962-06-13 | 1966-11-01 | Ibm | Apparatus for making precision resistors |
| US3373092A (en) * | 1963-03-29 | 1968-03-12 | Ajinomoto Kk | Electrodeposition of platinum group metals on titanium |
| US3454473A (en) * | 1963-12-07 | 1969-07-08 | Matsushita Electric Ind Co Ltd | Method for the manufacture of titanium anodic oxidation film capacitors having non-electrolytically plated cathode |
| US3247083A (en) * | 1964-04-01 | 1966-04-19 | Louis W Raymond | Method of chromium electrodeposition |
| US3969195A (en) * | 1971-05-07 | 1976-07-13 | Siemens Aktiengesellschaft | Methods of coating and surface finishing articles made of metals and their alloys |
| US4101386A (en) * | 1971-05-07 | 1978-07-18 | Siemens Aktiengesellschaft | Methods of coating and surface finishing articles made of metals and their alloys |
| US4148204A (en) * | 1971-05-07 | 1979-04-10 | Siemens Aktiengesellschaft | Process of mechanically shaping metal articles |
| BE769377A (en) * | 1971-07-01 | 1971-11-16 | En Nucleaire C E N E N I Centr | ELECTROCHEMICAL CUTTING PROCESS OF AN IRRADIATED NUCLEAR FUEL ASSEMBLY |
| US4126523A (en) * | 1976-10-21 | 1978-11-21 | Alumatec, Inc. | Method and means for electrolytic precleaning of substrates and the electrodeposition of aluminum on said substrates |
| CA1232227A (en) * | 1982-02-18 | 1988-02-02 | Christopher Vance | Manufacturing electrode by immersing substrate in aluminium halide and other metal solution and electroplating |
| US5318688A (en) * | 1993-03-05 | 1994-06-07 | Texaco Inc. | Method of preparing a membrane |
| US7290738B1 (en) * | 2004-10-28 | 2007-11-06 | The United States Of America As Represented By The Secretary Of The Navy | Dual jet emerging lift augmentation system for airfoils and hydrofoils |
| JP6444860B2 (en) * | 2012-06-08 | 2018-12-26 | オンデルゾエクセントラム・フォー・アーンウェンディング・ファン・シュタール・エヌ・フェー | Method for making a metal coating |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB190110705A (en) * | 1900-10-24 | 1901-11-09 | Anson Gardner Betts | Improvements in or relating to the Coating of Aluminium or its Alloys. |
| US1927772A (en) * | 1931-06-02 | 1933-09-19 | Purdue Research Foundation | Electroplating aluminum, etc., on copper, etc. |
| BE471083A (en) * | 1945-07-31 | |||
| US2738294A (en) * | 1951-09-13 | 1956-03-13 | Diamond Alkali Co | Salt bath system and method for treating metals |
| US2786809A (en) * | 1953-09-30 | 1957-03-26 | Horizons Titanium Corp | Electrolytic cladding |
-
1956
- 1956-03-21 US US572826A patent/US2873233A/en not_active Expired - Lifetime
-
1957
- 1957-03-21 GB GB9298/57A patent/GB836908A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US2873233A (en) | 1959-02-10 |
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