GB832979A - Improvements in and relating to semi-conductor rectifier units - Google Patents

Improvements in and relating to semi-conductor rectifier units

Info

Publication number
GB832979A
GB832979A GB1212156A GB1212156A GB832979A GB 832979 A GB832979 A GB 832979A GB 1212156 A GB1212156 A GB 1212156A GB 1212156 A GB1212156 A GB 1212156A GB 832979 A GB832979 A GB 832979A
Authority
GB
United Kingdom
Prior art keywords
seal
semi
base plate
indium
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1212156A
Inventor
John Charles Mccutchan
David Lorimer Smart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
English Electric Co Ltd
Original Assignee
English Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by English Electric Co Ltd filed Critical English Electric Co Ltd
Priority to GB1212156A priority Critical patent/GB832979A/en
Publication of GB832979A publication Critical patent/GB832979A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Rectifiers (AREA)

Abstract

832,979. Semi-conductor devices. ENGLISH ELECTRIC CO. Ltd. April 18, 1957 [April 20, 1956], No. 12121/56. Class 37. A method of making a semi-conductor rectifier unit comprising two body members and a seal defining an enclosure within which a semiconductor rectifier element is situated is characterized in that during the final stages of the assembly together of the members and seal at least a part of the unit is heated whereby dimensional changes on subsequent cooling places the rectifier element in compression. In the embodiment shown a first sub-assembly is formed by brazing one of the metal ends 19 of the metal and glass seal 13 to a terminal member 10. The terminal member consists of a brass sleeve 10a housing an internallythreaded flanged copper cylinder provided with radial cooling passages 14. A second subassembly is formed by soft soldering a fused junction-type of diode 12 base plate downwards to the face of a second terminal member 11. This member is similar to member 10 except that the internally-threaded cylinder 10b is replaced by an extended cylinder 11b threaded at 16. After the copper face of member 10 has been tinned with a low-melting point solder and heated to just above the melting point of indium the sub-assemblies are brought together in a jig. As soon as the member 10 has become bonded to the indium electrode 22 of the junction diode it is cooled by circulating water through it. The metal part 20 of the seal is then heated inductively to braze or solder it to member 11 at D while the remainder of the assembly is maintained at a lower temperature by circulation of water through members 10 and 11. During the cooling operation, following the completion of the joint D, the contraction of the metal part 20 places the junction diode in compression. The fused junction diode is made by assembling an indium disc, an N-type germanium disc and a base plate tinned with an antimonious soft solder in superposed relationship and heating to fuse them together. In a modification the base plate may be omitted and the germanium disc soldered directly to member 11.
GB1212156A 1956-04-20 1956-04-20 Improvements in and relating to semi-conductor rectifier units Expired GB832979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1212156A GB832979A (en) 1956-04-20 1956-04-20 Improvements in and relating to semi-conductor rectifier units

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1212156A GB832979A (en) 1956-04-20 1956-04-20 Improvements in and relating to semi-conductor rectifier units

Publications (1)

Publication Number Publication Date
GB832979A true GB832979A (en) 1960-04-21

Family

ID=9998745

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1212156A Expired GB832979A (en) 1956-04-20 1956-04-20 Improvements in and relating to semi-conductor rectifier units

Country Status (1)

Country Link
GB (1) GB832979A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1204751B (en) * 1960-09-30 1965-11-11 Siemens Ag Semiconductor component with a disk-shaped housing and method for producing such a component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1204751B (en) * 1960-09-30 1965-11-11 Siemens Ag Semiconductor component with a disk-shaped housing and method for producing such a component

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