GB822678A - Improvements in and relating to semi-conductive devices - Google Patents
Improvements in and relating to semi-conductive devicesInfo
- Publication number
- GB822678A GB822678A GB3294557A GB3294557A GB822678A GB 822678 A GB822678 A GB 822678A GB 3294557 A GB3294557 A GB 3294557A GB 3294557 A GB3294557 A GB 3294557A GB 822678 A GB822678 A GB 822678A
- Authority
- GB
- United Kingdom
- Prior art keywords
- aluminium
- slice
- wire
- silicon
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
822,678. Forming P-N junctions. MULLARD Ltd. Oct. 22, 1957, No. 32945/57. Class 37. An alloy junction is made by applying a freshly-prepared surface of aluminium to the surface of a silicon crystal, heating in an oxidizing atmosphere while maintaining the contact between the aluminium and silicon to provide liquid aluminium-silicon at the surface of contact and cooling to form an alloy junction. A rectangular slice of single crystal of n-type silicon is prepared by applying gold-antimony foil to one of its largest surfaces and heating in an oven to form an n+ region and counterelectrode. This slice is then placed on a silica support and the freshly cut end of an aluminium wire (or gallium aluminium wire) is placed in contact with the untreated large surface of the slice. The wire is applied to the slice under light pressure and the arrangement is heated for 35 seconds in air to about 600‹ C. by means of an electrical heating coil. A conductive connection to the counter-electrode is made by iron-nickel-cobalt wire using a tin-lead solder. The device is then encapsulated in any known manner. The method described may be used to make a PNP transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3294557A GB822678A (en) | 1957-10-22 | 1957-10-22 | Improvements in and relating to semi-conductive devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3294557A GB822678A (en) | 1957-10-22 | 1957-10-22 | Improvements in and relating to semi-conductive devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB822678A true GB822678A (en) | 1959-10-28 |
Family
ID=10346335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3294557A Expired GB822678A (en) | 1957-10-22 | 1957-10-22 | Improvements in and relating to semi-conductive devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB822678A (en) |
-
1957
- 1957-10-22 GB GB3294557A patent/GB822678A/en not_active Expired
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