GB784782A - Improvements in or relating to processes for the production of selenium rectifiers - Google Patents

Improvements in or relating to processes for the production of selenium rectifiers

Info

Publication number
GB784782A
GB784782A GB396354A GB396354A GB784782A GB 784782 A GB784782 A GB 784782A GB 396354 A GB396354 A GB 396354A GB 396354 A GB396354 A GB 396354A GB 784782 A GB784782 A GB 784782A
Authority
GB
United Kingdom
Prior art keywords
layer
additive
layers
selenium
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB396354A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES32123A external-priority patent/DE1060053B/en
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB784782A publication Critical patent/GB784782A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

784,782. Plate rectifiers. SIEMENSSCHUCKERTWERKE AKT.-GES. Feb. 10, 1954 [Feb. 10, 1953], No. 3963/54. Drawings to Specification. Class 37. A selenium rectifier is produced by building up the selenium in plurality of layers, each layer including as a first additive a halogen, or halogen compound which increases the conductivity of the selenium and the layer adjacent the barrier layer (and if more than two layers are involved, the next adjacent layers excepting one or more of the last layers) also including a second additive such as thallium, which promotes the formation of the barrier layer, the quantity of the second additive in each layer progressively increasing in the direction approaching the barrier layer. The first addition may consist of C1, I, Br, Se 2 Cl 2 , Sa 2 Br 2' SeCl 4 or SeBr 4 and the second additive of Sb, Bi, Sn, Tl, In, Ga, Cd, Cu, Pb, As or S, or alloys or compounds thereof. The presence of the second additive will reduce the conductivity of the layer, but this may be compensated for by increasing the quantity of halogen. The second layer may be applied before or after the first layer has been rendered crystalline. Before applying the counter electrode, which may consist of Bi, Sn, Cd or alloys thereof. an additional layer of CdSe, CdS or SeO 2 may be applied.
GB396354A 1953-02-10 1954-02-10 Improvements in or relating to processes for the production of selenium rectifiers Expired GB784782A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES32123A DE1060053B (en) 1953-02-10 1953-02-10 Process for the production of selenium rectifiers with a multilayer semiconductor with different halogen contents and electropositive additives in the individual layers

Publications (1)

Publication Number Publication Date
GB784782A true GB784782A (en) 1957-10-16

Family

ID=7480745

Family Applications (2)

Application Number Title Priority Date Filing Date
GB396354A Expired GB784782A (en) 1953-02-10 1954-02-10 Improvements in or relating to processes for the production of selenium rectifiers
GB396454A Expired GB784783A (en) 1953-02-10 1954-02-10 Improvements in or relating to processes for the production of selenium rectifiers

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB396454A Expired GB784783A (en) 1953-02-10 1954-02-10 Improvements in or relating to processes for the production of selenium rectifiers

Country Status (3)

Country Link
CH (2) CH324873A (en)
GB (2) GB784782A (en)
NL (2) NL101501C (en)

Also Published As

Publication number Publication date
CH324873A (en) 1957-10-15
CH324326A (en) 1957-09-15
GB784783A (en) 1957-10-16
NL101501C (en)
NL184784B (en)

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