GB764489A - An improved semi-conductor arrangement comprising a cathode, an anode and a control electrode - Google Patents

An improved semi-conductor arrangement comprising a cathode, an anode and a control electrode

Info

Publication number
GB764489A
GB764489A GB864554A GB864554A GB764489A GB 764489 A GB764489 A GB 764489A GB 864554 A GB864554 A GB 864554A GB 864554 A GB864554 A GB 864554A GB 764489 A GB764489 A GB 764489A
Authority
GB
United Kingdom
Prior art keywords
cathode
anode
control electrode
carriers
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB864554A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB764489A publication Critical patent/GB764489A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G25/00—Conveyors comprising a cyclically-moving, e.g. reciprocating, carrier or impeller which is disengaged from the load during the return part of its movement
    • B65G25/04—Conveyors comprising a cyclically-moving, e.g. reciprocating, carrier or impeller which is disengaged from the load during the return part of its movement the carrier or impeller having identical forward and return paths of movement, e.g. reciprocating conveyors
    • B65G25/08—Conveyors comprising a cyclically-moving, e.g. reciprocating, carrier or impeller which is disengaged from the load during the return part of its movement the carrier or impeller having identical forward and return paths of movement, e.g. reciprocating conveyors having impellers, e.g. pushers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Reciprocating Pumps (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

764,489. Semi-conductor devices. SIEMENS & HALSKE AKT.-GES. March 24, 1954 [March 25, 1953; Nov. 17, 1953], No. 8645/54. Class 37. A semi-conductor amplifier comprises a first thin zone 3<SP>1</SP> of one conductivity type lying between two zones 2<SP>1</SP>, 4<SP>1</SP> of the opposite conductivity type, a cathode 2 and an anode 4 connection to each of the two zones respectively, and a control electrode 3 connected to the first zone, both PN junctions being reverse biased to such a magnitude that the two resulting space charge regions overlap. A continuous space charge region thus lies between anode and cathode and current between these electrodes due to carriers injected from the cathode is controlled by varying the potential of the control electrode. The central zone may be wedge-shaped, or, as shown in Fig. 7, thinner in its central region, and the impurity concentration may vary along the anode-cathode path, being greatest in the region adjoining the cathode. The region adjoining the control electrode may also be of increased impurity concentration. The semi-conductor material may consist of germanium or silicon, or of a compound of elements of the third and fifth, or of the second and sixth groups of the Periodic system. Current between anode and cathode comprises carriers which overcome or penetrate the .potential barrier by thermal energy or tunnel effect, and carriers which provide Zener current. The biasing and impurity distribution, and possibly the operating temperatures, is arranged so that the major part of the anode current is provided by those carriers which overcome the potential barrier, and are thus subject to control by the potential of the control electrode. The shape of the potential barrier may also be controlled to increase or decrease the proportion of carriers which overcome the barrier by tunnel effect rather than thermally, so that the arrangement may be either less or more sensitive to temperature respectively, as desired. The arrangement is distinguished from, and has a lower input capacitance than, the analogue transistor in which control is exercised by varying the thickness of part of the anode-cathode path, which lies between two variable space-charge regions.
GB864554A 1953-03-25 1954-03-24 An improved semi-conductor arrangement comprising a cathode, an anode and a control electrode Expired GB764489A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES46787A DE1042129B (en) 1953-03-25 1953-03-25 Semiconductor arrangement with two zones of the same conductivity type, a middle zone of opposite conductivity type and very small thickness as well as a potential wall which is thermally overcome

Publications (1)

Publication Number Publication Date
GB764489A true GB764489A (en) 1956-12-28

Family

ID=7486135

Family Applications (2)

Application Number Title Priority Date Filing Date
GB764486D Active GB764486A (en) 1953-03-25
GB864554A Expired GB764489A (en) 1953-03-25 1954-03-24 An improved semi-conductor arrangement comprising a cathode, an anode and a control electrode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB764486D Active GB764486A (en) 1953-03-25

Country Status (4)

Country Link
DE (1) DE1042129B (en)
FR (1) FR1097381A (en)
GB (2) GB764489A (en)
NL (1) NL186225C (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1209312A (en) * 1958-12-17 1960-03-01 Hughes Aircraft Co Improvements to Junction Type Semiconductor Devices

Also Published As

Publication number Publication date
FR1097381A (en) 1955-07-05
GB764486A (en)
DE1042129B (en) 1958-10-30
NL186225C (en)

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