GB763443A - Improvements in or relating to transistor circuits for amplifying electrical signals - Google Patents

Improvements in or relating to transistor circuits for amplifying electrical signals

Info

Publication number
GB763443A
GB763443A GB17221/53A GB1722153A GB763443A GB 763443 A GB763443 A GB 763443A GB 17221/53 A GB17221/53 A GB 17221/53A GB 1722153 A GB1722153 A GB 1722153A GB 763443 A GB763443 A GB 763443A
Authority
GB
United Kingdom
Prior art keywords
circuit
frequency
signal
transistor
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17221/53A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB763443A publication Critical patent/GB763443A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes

Abstract

763,443. Semi-conductor amplifying circuits. PHILIPS ELECTRICAL INDUSTRIES, Ltd. June 22, 1953 [June 25, 1952], No. 17221/53. Class 40(6) A circuit for amplifying an intelligence signal shown in the Figure as derived from a source Vi comprises a transistor 1 to the input circuit of which the intelligence signal is applied together with an auxiliary oscillation Vo, having a higher frequency fo than the band of frequencies indicated generally as fi occupied by the intelligence signal Vi, so that an output signal of a suitable combination frequency, e.g. (fo + fi) is developed across the resonant circuit 9 tuned to the selected combination frequency. By suitable demodulation of the signal developed across the resonant circuit 9, an amplified version of the input signal Vi may be derived, the object of the invention being to derive such an amplified signal having a low signal-to-noise ratio. This is achieved by suitably biasing the transistor 1 and by selecting appropriate values for the elements in the output circuit of the transistor. It is stated that the total impedance in the output circuit must be high at the combination frequency (fo + fi); this is achieved by the tuning of the resonant circuit 9 to that frequency. Further a low impedance is desired at the frequency fo of the auxiliary oscillation Vo, while a high impedance is desired at the frequency of the intelligence signal fi, a suitably designed resistance capacitance circuit 10 being provided for this latter purpose. A comparatively low resistance 25 may further be introduced into the output circuit of the transistor to provide negative feed-back at the frequency fo and maintains the level of noise generated at the collector contact at that frequency constant. A modified form of circuit is illustrated in Fig. 4 wherein the effective base resistance is reduced to zero by means of a current negative feed-back provided by the phasereversing transformer 12 and resistor 13. It is stated that assuming the transformer 12 has a one-to-one ratio the resistor 13 should have a valve equal to the natural value of the base impedance. Fig 5 shows a further modification wherein the local oscillation of frequency fo is generated in the circuit itself by means of the tuned circuit 15 connected in the base circuit of the transistor 1. The diode 21 and by-pass resistor 23 are provided to limit the amplitude of the oscillation developed across the circuit 15. In a further modification Fig. 6 (not shown) the circuit of Fig. 5 is modified by connecting a tapped-off portion only of the inductor of the circuit 15 in the emitter-base circuit of the transistor.
GB17221/53A 1952-06-25 1953-06-22 Improvements in or relating to transistor circuits for amplifying electrical signals Expired GB763443A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL170604 1952-06-25

Publications (1)

Publication Number Publication Date
GB763443A true GB763443A (en) 1956-12-12

Family

ID=19750570

Family Applications (2)

Application Number Title Priority Date Filing Date
GB17222/53A Expired GB739107A (en) 1952-06-25 1953-06-22 Improvements in or relating to transistor mixing circuit arrangements
GB17221/53A Expired GB763443A (en) 1952-06-25 1953-06-22 Improvements in or relating to transistor circuits for amplifying electrical signals

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB17222/53A Expired GB739107A (en) 1952-06-25 1953-06-22 Improvements in or relating to transistor mixing circuit arrangements

Country Status (6)

Country Link
BE (2) BE520933A (en)
CH (2) CH317318A (en)
DE (2) DE933517C (en)
FR (2) FR1089523A (en)
GB (2) GB739107A (en)
NL (1) NL92530C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177437A (en) * 1961-07-10 1965-04-06 Gen Electric Vertical deflection circuit

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1009239B (en) * 1954-01-29 1957-05-29 Philips Nv Cascade amplifier circuit with transistors
DE1063646B (en) * 1955-05-18 1959-08-20 Philips Nv Arrangement for amplifying a signal voltage using a transistor relaxation oscillator
US2924744A (en) * 1955-09-08 1960-02-09 Gen Electric Deflection circuit
DE1090729B (en) * 1959-07-04 1960-10-13 Deutsche Elektronik Gmbh Mixer stage with one transistor
US3248557A (en) * 1959-07-20 1966-04-26 Bendix Corp Transistor parametric reactance amplifier
US3125725A (en) * 1959-07-20 1964-03-17 chang
DE1150412B (en) * 1960-09-09 1963-06-20 Henry P Kalmus Circuit arrangement for amplifying or measuring a direct current quantity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177437A (en) * 1961-07-10 1965-04-06 Gen Electric Vertical deflection circuit

Also Published As

Publication number Publication date
CH318086A (en) 1956-12-15
GB739107A (en) 1955-10-26
BE520933A (en)
DE921995C (en) 1955-01-07
CH317318A (en) 1956-11-15
FR1089523A (en) 1955-03-18
NL92530C (en)
BE520932A (en)
DE933517C (en) 1955-09-29
FR1086824A (en) 1955-02-16

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