GB740419A - Improvements in and relating to the manufacture of area-junction semiconductor devices - Google Patents

Improvements in and relating to the manufacture of area-junction semiconductor devices

Info

Publication number
GB740419A
GB740419A GB22381/53A GB2238153A GB740419A GB 740419 A GB740419 A GB 740419A GB 22381/53 A GB22381/53 A GB 22381/53A GB 2238153 A GB2238153 A GB 2238153A GB 740419 A GB740419 A GB 740419A
Authority
GB
United Kingdom
Prior art keywords
impurity
slice
crucible
semiconductor
cavities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22381/53A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTE Sylvania Inc
Original Assignee
Sylvania Electric Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sylvania Electric Products Inc filed Critical Sylvania Electric Products Inc
Publication of GB740419A publication Critical patent/GB740419A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/01—Control of temperature without auxiliary power
    • G05D23/13—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K47/00—Means in valves for absorbing fluid energy
    • F16K47/08—Means in valves for absorbing fluid energy for decreasing pressure or noise level and having a throttling member separate from the closure member, e.g. screens, slots, labyrinths
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24D—DOMESTIC- OR SPACE-HEATING SYSTEMS, e.g. CENTRAL HEATING SYSTEMS; DOMESTIC HOT-WATER SUPPLY SYSTEMS; ELEMENTS OR COMPONENTS THEREFOR
    • F24D19/00—Details
    • F24D19/0002—Means for connecting central heating radiators to circulation pipes
    • F24D19/0004—In a one pipe system
    • F24D19/0007—Comprising regulation means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/01—Control of temperature without auxiliary power
    • G05D23/12—Control of temperature without auxiliary power with sensing element responsive to pressure or volume changes in a confined fluid
    • G05D23/125—Control of temperature without auxiliary power with sensing element responsive to pressure or volume changes in a confined fluid the sensing element being placed outside a regulating fluid flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Fluid Mechanics (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

740,419. Forming surface-alloys. SYLVANIA ELECTRIC PRODUCTS, Inc. Aug. 13, 1953 [Aug. 14, 1952], No. 22381/53. Class 82 (2). [Also in Groups XXII and XXXVI] A junction transistor is produced by confining a semi-conductor slice between opposed masking surfaces and applying molten metal impurity material to the semiconductor surfaces in the unmasked areas. Fig. 1 shows a junction transistor comprising a germanium slice 10 provided with electrodes 12 and 14 which form PN junctions 12A, 14A of different areas, with the semiconductor body. Electrodes 12 and 14 are provided by clamping a semiconductor slice 24 (Figs. 2 and 3) between two portions 20 of a graphite crucible having a series of cavities 22 filled with acceptor or donor impurity, according to whether the slice is of N or P type conductivity; the semiconductorimpurity alloy has a lower melting point than that of the semiconductor. The two portions of the crucible are clamped together by wedge shaped trough 28. The assembly is then'heated in a vacuum, or in hydrogen to melt and diffuse the impurity into the germanium to provide a PN junction at a desired depth. In the case of N. type germanium with indium as the impurity, the assembly is raised to 550‹ C. to 650‹ C. for about 90 seconds. An ohmic contact is provided along edge 24, and the slice removed and broken to provide a number of transistor devices each corresponding to a cavity 22. Thallium may be used in place of indium. Modified forms of crucible are described in which channels and auxiliary cavities are provided which connect with cavities 22 to maintain the level of impurity at a desired level. In these cases, if an auxiliary channel connects the two sections of the crucible, an electric current may be used to melt the impurity which solidifies in this channel after the heating, so that the crucible sections may be separated.
GB22381/53A 1952-08-14 1953-08-13 Improvements in and relating to the manufacture of area-junction semiconductor devices Expired GB740419A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US740419XA 1952-08-14 1952-08-14

Publications (1)

Publication Number Publication Date
GB740419A true GB740419A (en) 1955-11-09

Family

ID=22117346

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22381/53A Expired GB740419A (en) 1952-08-14 1953-08-13 Improvements in and relating to the manufacture of area-junction semiconductor devices

Country Status (3)

Country Link
FR (1) FR1088286A (en)
GB (1) GB740419A (en)
NL (2) NL180482B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3175274A (en) * 1960-05-20 1965-03-30 Columbia Broadcasting Syst Inc Method for applying electrodes to semiconductor devices

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE25633E (en) * 1954-09-29 1964-08-25 Process for making fused junction
US2942568A (en) * 1954-10-15 1960-06-28 Sylvania Electric Prod Manufacture of junction transistors
BE546128A (en) * 1955-03-18 1900-01-01
US2871149A (en) * 1955-05-02 1959-01-27 Sprague Electric Co Semiconductor method
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
DE1045549B (en) * 1956-02-15 1958-12-04 Intermetall Process for making alloy contacts with p-n junctions
DE1110763B (en) * 1956-10-11 1961-07-13 Siemens Ag Method and device for the production of semiconductor arrangements with alloyed, flat p-n-junctions
US2893901A (en) * 1957-01-28 1959-07-07 Sprague Electric Co Semiconductor junction
NL224440A (en) * 1957-03-05
NL108503C (en) * 1957-08-08
NL106425C (en) * 1958-01-14
BE575988A (en) * 1958-02-22
NL242858A (en) * 1958-09-15

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3175274A (en) * 1960-05-20 1965-03-30 Columbia Broadcasting Syst Inc Method for applying electrodes to semiconductor devices

Also Published As

Publication number Publication date
NL88391C (en)
FR1088286A (en) 1955-03-04
NL180482B (en)

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