GB713929A - Selenium rectifiers and method of manufacture - Google Patents

Selenium rectifiers and method of manufacture

Info

Publication number
GB713929A
GB713929A GB25435/52A GB2543552A GB713929A GB 713929 A GB713929 A GB 713929A GB 25435/52 A GB25435/52 A GB 25435/52A GB 2543552 A GB2543552 A GB 2543552A GB 713929 A GB713929 A GB 713929A
Authority
GB
United Kingdom
Prior art keywords
selenium
nickel
electrode
subjected
finely divided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25435/52A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB713929A publication Critical patent/GB713929A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S73/00—Measuring and testing
    • Y10S73/05—Liquid levels with magnetic transmission

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

713,929. Dry plate rectifiers. STANDARD TELEPHONES & CABLES, Ltd. Oct. 10, 1952, [Dec. 14, 1951.] No. 25435/52. Drawings to Specification. Class 37. A selenium rectifier comprises a compound of nickel selenide at the interface between adjacent layers of selenium and nickel, which is produced by heating the layers to a temperature of at least 400‹C. The base electrode may consist of iron, aluminium, magnesium, beryllium or alloys thereof, which is nickel plated and then roughened by sand blasting or etching. The selenium layer may be added by rubbing a stick of selenium across the surface, or spreading powder or pellets on the heated surface, or by vaporization. During the heating process at 400‹C. to form the nickel selenide, the electrode may be spun to remove surplus selenium, but this is not necessary if the selenium is in a finely divided state sufficient to pass through a 200 mesh screen. A second coating of finely divided amorphous selenium may then be applied which may include other material such as the halides of selenium. The coated electrode may then be subjected to annealing heat treatment at about 220‹C., which converts the amorphous selenium to the crystalline state. A laquer barrier layer is applied, followed by a counter electrode of a cadmium-bismuth eutectic alloy. The device may be subjected to electroforming. Specification 591,412 is referred to.
GB25435/52A 1951-12-14 1952-10-10 Selenium rectifiers and method of manufacture Expired GB713929A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US261726A US2745047A (en) 1951-12-14 1951-12-14 Selenium rectifiers and method of manufacture

Publications (1)

Publication Number Publication Date
GB713929A true GB713929A (en) 1954-08-18

Family

ID=22994590

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25435/52A Expired GB713929A (en) 1951-12-14 1952-10-10 Selenium rectifiers and method of manufacture

Country Status (2)

Country Link
US (1) US2745047A (en)
GB (1) GB713929A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2994621A (en) * 1956-03-29 1961-08-01 Baldwin Piano Co Semi-conductive films and methods of producing them
DE1229192B (en) * 1956-10-11 1966-11-24 Standard Elektrik Lorenz Ag Process for the manufacture of selenium rectifiers
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
US3052572A (en) * 1959-09-21 1962-09-04 Mc Graw Edison Co Selenium rectifiers and their method of manufacture
US3297921A (en) * 1965-04-15 1967-01-10 Int Rectifier Corp Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer
DE1922140B2 (en) * 1969-04-25 1976-08-26 Siemens AG, 1000 Berlin und 8000 München METHOD OF MANUFACTURING A SELENIUM RECTIFIER
CN109273355B (en) * 2018-06-06 2022-03-01 鹤壁维达科巽电气有限公司 Preparation process of selenium rectifying sheet

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2446237A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Selenium rectifier
US2524270A (en) * 1945-09-27 1950-10-03 Sylvania Electric Prod Selenium rectifier
US2433353A (en) * 1946-03-13 1947-12-30 Standard Telephones Cables Ltd Method of roughening the surface of ferrous elements
US2504226A (en) * 1948-07-28 1950-04-18 Vickers Inc Devices which have selenium as constituent parts thereof
US2644915A (en) * 1950-07-24 1953-07-07 Bell Telephone Labor Inc Selenium rectifier and method of its production

Also Published As

Publication number Publication date
US2745047A (en) 1956-05-08

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