GB669611A - Improvements relating to the manufacture of dry surface contact rectifiers - Google Patents

Improvements relating to the manufacture of dry surface contact rectifiers

Info

Publication number
GB669611A
GB669611A GB336350A GB336350A GB669611A GB 669611 A GB669611 A GB 669611A GB 336350 A GB336350 A GB 336350A GB 336350 A GB336350 A GB 336350A GB 669611 A GB669611 A GB 669611A
Authority
GB
United Kingdom
Prior art keywords
treated
heated
peroxide
acid
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB336350A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB1560750A priority Critical patent/GB669622A/en
Priority to GB336350A priority patent/GB669611A/en
Priority to FR1027168D priority patent/FR1027168A/en
Publication of GB669611A publication Critical patent/GB669611A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)

Abstract

669,611. Dry surface contact rectifiers. WESTINGHOUSE BRAKE & SIGNAL CO., Ltd., JENKINS, A., and PETER, L. H. July 27, 1950 [Feb. 9, 1950], No. 3363/50. Class 37. A dry surface contact rectifier comprises a semi-conducting body wholly or mainly of titanium dioxide of non-stoichiometric composition, whose surface has been treated so as to make good the oxygen deficiency in that surface, and a counter electrode applied to that surface, the counter-electrode being of thallium, tellurium, gold, palladium, lead, bismuth, silver, cadmium, nickel, copper, tin, alkali metals, antimony, carbon, cobalt, gallium, indium, or alloys thereof. The titanium dioxide wafer is treated by heating to red heat in a neutral atmosphere, and then plunged into air, ozone, nitrogen peroxide or any other gaseous oxidizing agent. Alternatively, the wafer may be treated with nitric acid or aqua regia and then dried at a temperature of 100‹ C. or rapidly heated to 400-500‹ C. A halogen acid, e.g. hydrofluoric acid may be employed. In another mode, the wafer is treated with sulphuric acid, and then heated to red heat. Oxidizing agents such as hydrogen peroxide or sodium peroxide may be used as well as an acid solution of potassium dichromate or potassium permanganate. The treatment must not be prolonged or too deep a penetration of oxygem will result. According to the Provisional Specification solid oxidizing agents such as barium dioxide, manganese dioxide, sodium peroxide, lead peroxide, potassium chlorate, potassium nitrate, chromium trioxide may be applied to the surface and heated to form a titanate. Oxycompounds of the general form MnRyOz may also be applied and heated to between 300‹ and 1000‹ C.; examples are metal titanate, sulphates, nitrates, phosphates, tungstates, borates, permanganates and dichromates. Oxides, e.g. magnesium, zinc, lead and iron may be used, but Al 2 O 3 and SnO 2 are not suitable. Other compounds are NaOH, Na 3 CO 3 NaHSO and steam. Metal halides may be used, e.g. MnCl 2 , ZnF 2 , MgCl 2 +MgO, MnF 2 , NaCl and KI, the two last with oxygen.
GB336350A 1950-02-09 1950-02-09 Improvements relating to the manufacture of dry surface contact rectifiers Expired GB669611A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB1560750A GB669622A (en) 1950-02-09 1950-02-09 Improvements relating to the manufacture of dry surface contact rectifiers
GB336350A GB669611A (en) 1950-02-09 1950-02-09 Improvements relating to the manufacture of dry surface contact rectifiers
FR1027168D FR1027168A (en) 1950-02-09 1950-11-03 Manufacturing process of straighteners with dry contaet surfaces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB336350A GB669611A (en) 1950-02-09 1950-02-09 Improvements relating to the manufacture of dry surface contact rectifiers

Publications (1)

Publication Number Publication Date
GB669611A true GB669611A (en) 1952-04-02

Family

ID=9756897

Family Applications (2)

Application Number Title Priority Date Filing Date
GB336350A Expired GB669611A (en) 1950-02-09 1950-02-09 Improvements relating to the manufacture of dry surface contact rectifiers
GB1560750A Expired GB669622A (en) 1950-02-09 1950-02-09 Improvements relating to the manufacture of dry surface contact rectifiers

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1560750A Expired GB669622A (en) 1950-02-09 1950-02-09 Improvements relating to the manufacture of dry surface contact rectifiers

Country Status (2)

Country Link
FR (1) FR1027168A (en)
GB (2) GB669611A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2948837A (en) * 1956-09-04 1960-08-09 Mc Graw Edison Co Solid state electronic switch and circuits therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2948837A (en) * 1956-09-04 1960-08-09 Mc Graw Edison Co Solid state electronic switch and circuits therefor

Also Published As

Publication number Publication date
GB669622A (en) 1952-04-02
FR1027168A (en) 1953-05-08

Similar Documents

Publication Publication Date Title
GB612419A (en) Processes for removing oxide from the surfaces of metals and alloys
GB675131A (en) Improved process for manufacturing porous carbon electrodes
GB669611A (en) Improvements relating to the manufacture of dry surface contact rectifiers
US2211400A (en) Pickling solution for copper-base alloys
US2692212A (en) Manufacture of dry surface contact rectifiers
US2942954A (en) Non-hazardous etching solutions
US2648596A (en) Sodium superoxide production
US1926132A (en) Manufacture of electrical rectifiers
GB763250A (en) Preparation of inorganic fluorine compounds
Lingane et al. Potentiometric Titration of+ 4 and+ 6 Selenium and Tellurium with Chromous Ion
US2980508A (en) Oxidation of trivalent titanium compounds contained in solid titaniferous materials
Aynsley et al. 335. The reaction of fluorine with the oxides and oxy-compounds of manganes and rhenium
Young et al. Reaction of Tantalum with Hydrogen Chloride, Hydrogen Bromide and Tantalum Pentachloride; Action of Hydrogen on Tantalum Pentachloride
Ball et al. Thermal studies on halides and basic halides of copper (II)
Li et al. Conductivity Studies. IV. The Limiting Ionic Mobilities of Several Univalent Ions at Temperatures between 15 and 45°
US2721966A (en) Manufacture of dry surface contact rectifiers
US1343390A (en) Process of forming manganese peroxid
Kuz'minskii et al. Chemical and phase composition of manganese oxides obtained by Mn (II) oxidation in nitrate solutions
Legma et al. A Study of the Ta--O sub 2 Reaction at High Temperature and Low Pressure. II.--Chemical Analysis by Electron Spectroscopy
US3361674A (en) Copper etchant
US1639982A (en) Producing solid oxides of carbon
US2371483A (en) Copper pigment
Zhang et al. Catalytic and inhibiting effects of barium peroxide and hydroxide on the decomposition of sodium chlorate
JPS5920602B2 (en) Production method of silver oxide for batteries
GB190716068A (en)