GB643448A - Improvements in processes for producing piezo-electric crystals - Google Patents

Improvements in processes for producing piezo-electric crystals

Info

Publication number
GB643448A
GB643448A GB23158/46A GB2315846A GB643448A GB 643448 A GB643448 A GB 643448A GB 23158/46 A GB23158/46 A GB 23158/46A GB 2315846 A GB2315846 A GB 2315846A GB 643448 A GB643448 A GB 643448A
Authority
GB
United Kingdom
Prior art keywords
mixture
pict
iii
plate
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23158/46A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marconis Wireless Telegraph Co Ltd
BAE Systems Electronics Ltd
Original Assignee
Marconis Wireless Telegraph Co Ltd
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconis Wireless Telegraph Co Ltd, Marconi Co Ltd filed Critical Marconis Wireless Telegraph Co Ltd
Publication of GB643448A publication Critical patent/GB643448A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/18Quartz
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54Organic compounds
    • C30B29/56Tartrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Glass Compositions (AREA)

Abstract

<PICT:0643448/III/1> <PICT:0643448/III/2> <PICT:0643448/III/3> A monocrystalline body is made by mixing powdered silica, tourmaline, or Rochelle salt with a small proportion of a liquid capable of slightly dissolving the powder, compressing the mixture so that it behaves as a rigid body, and subjecting the compressed mixture to high-frequency vibrations. The vibrations are set up by an alternating electric field and/or by a source of supersonic oscillations. One frequency component is made equal to the natural mechanical vibration frequency of the compressed body. The process is preferably carried out at an elevated temperature below the melting point of the substance, and in the presence of a crystallization catalyst. Oriented growth may be superimposed upon a piezoelectric monocrystalline body, such as an oscillator plate, by means of the process; in this case a mixture of the finely-divided substance of the plate and the solvent, is packed around the plate, the combination is then compressed so that it behaves as a rigid body which is placed in an alternating electric field. Quartz, chalcedony, hydrated silica, or amorphous silica in the form of particles of 10 micron size is mixed with a small amount of water; and a small amount of a metallic hydroxide or of a strong organic base, is added as catalyst. The mixture is packed into a compartment, Fig. 1, consisting of glass or ceramic walls 11, with top and bottom electrode plates 1, 2. The temperature is raised to about 374 DEG C. by resistance heaters 14, pressure is applied to the top electrode by means of shaft 15, and an alternating electric field of frequency between 50,000 and 10,000,000 cycles per second, is maintained between the electrodes by oscillator A and conductors 19. In the modification shown in Fig. 6, electrodes 3 and 4 provide an inclined H.F. field through the mass, and the ends 18 are connected to a source of supersonic oscillations B (15 to 50 kilocycles/sec.). Fig. 8 shows the arrangement used to build up a quartz oscillator plate 23; it is packed in a mixture 22 of powdered silica, water and catalyst.
GB23158/46A 1945-11-01 1946-08-02 Improvements in processes for producing piezo-electric crystals Expired GB643448A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US643448XA 1945-11-01 1945-11-01

Publications (1)

Publication Number Publication Date
GB643448A true GB643448A (en) 1950-09-20

Family

ID=22055296

Family Applications (1)

Application Number Title Priority Date Filing Date
GB23158/46A Expired GB643448A (en) 1945-11-01 1946-08-02 Improvements in processes for producing piezo-electric crystals

Country Status (1)

Country Link
GB (1) GB643448A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2657661A (en) * 1952-01-14 1953-11-03 United Fruit Co Insulating hatchcover with inflatable gasket
US2928163A (en) * 1955-08-11 1960-03-15 Clevite Corp Polarization of titanate ceramics
EP0693580A1 (en) * 1994-07-18 1996-01-24 Sumitomo Electric Industries, Ltd. Oxide thin film having quartz crystal structure and process for producing the same
EP0716167A3 (en) * 1994-12-05 1999-08-11 Sumitomo Electric Industries, Ltd. Single crystal quartz thin film and preparation thereof
EP0960961A1 (en) * 1991-09-24 1999-12-01 Gordian Holding Corporation Method of making a quartz crystal having a particular resonant frequency
WO2004047193A1 (en) * 2002-11-16 2004-06-03 Key Sung Metal Co., Ltd. Piezoelectric ceramics crystal-oriented under electric field and method of manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2657661A (en) * 1952-01-14 1953-11-03 United Fruit Co Insulating hatchcover with inflatable gasket
US2928163A (en) * 1955-08-11 1960-03-15 Clevite Corp Polarization of titanate ceramics
EP0960961A1 (en) * 1991-09-24 1999-12-01 Gordian Holding Corporation Method of making a quartz crystal having a particular resonant frequency
EP0693580A1 (en) * 1994-07-18 1996-01-24 Sumitomo Electric Industries, Ltd. Oxide thin film having quartz crystal structure and process for producing the same
US5879811A (en) * 1994-07-18 1999-03-09 Sumitomo Electric Industries, Ltd. Oxide thin film having quartz crystal structure
EP0716167A3 (en) * 1994-12-05 1999-08-11 Sumitomo Electric Industries, Ltd. Single crystal quartz thin film and preparation thereof
WO2004047193A1 (en) * 2002-11-16 2004-06-03 Key Sung Metal Co., Ltd. Piezoelectric ceramics crystal-oriented under electric field and method of manufacturing the same
US7467448B2 (en) 2002-11-16 2008-12-23 Key Sung Metal Co., Ltd. Method of manufacturing a piezoelectric ceramic

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