GB639476A - Improvements in electric wave translating devices - Google Patents
Improvements in electric wave translating devicesInfo
- Publication number
- GB639476A GB639476A GB21763/47A GB2176347A GB639476A GB 639476 A GB639476 A GB 639476A GB 21763/47 A GB21763/47 A GB 21763/47A GB 2176347 A GB2176347 A GB 2176347A GB 639476 A GB639476 A GB 639476A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- silicon
- electric wave
- translating devices
- crust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US530419A US2437269A (en) | 1944-04-10 | 1944-04-10 | Translating device and method of making it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB639476A true GB639476A (en) | 1950-06-28 |
Family
ID=24113578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB21763/47A Expired GB639476A (en) | 1944-04-10 | 1947-08-07 | Improvements in electric wave translating devices |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2437269A (https=) |
| BE (1) | BE476053A (https=) |
| CH (1) | CH266759A (https=) |
| FR (1) | FR950513A (https=) |
| GB (1) | GB639476A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1058634B (de) * | 1956-06-07 | 1959-06-04 | Ibm Deutschland | Gasdiffusionsverfahren zur Herstellung eines Transistors |
| DE1095401B (de) * | 1958-04-16 | 1960-12-22 | Standard Elektrik Lorenz Ag | Verfahren zum Eindiffundieren von Fremdstoffen in einen Halbleiterkoerper zur Herstellung einer elektrischen Halbleiteranordnung |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL70486C (https=) * | 1945-12-29 | |||
| BE500302A (https=) * | 1949-11-30 | |||
| BE536181A (https=) * | 1954-03-03 | |||
| US2935453A (en) * | 1957-04-11 | 1960-05-03 | Sylvania Electric Prod | Manufacture of semiconductive translating devices |
| NL235544A (https=) * | 1958-01-28 |
-
0
- BE BE476053D patent/BE476053A/xx unknown
-
1944
- 1944-04-10 US US530419A patent/US2437269A/en not_active Expired - Lifetime
-
1947
- 1947-07-29 CH CH266759D patent/CH266759A/fr unknown
- 1947-07-30 FR FR950513D patent/FR950513A/fr not_active Expired
- 1947-08-07 GB GB21763/47A patent/GB639476A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1058634B (de) * | 1956-06-07 | 1959-06-04 | Ibm Deutschland | Gasdiffusionsverfahren zur Herstellung eines Transistors |
| DE1095401B (de) * | 1958-04-16 | 1960-12-22 | Standard Elektrik Lorenz Ag | Verfahren zum Eindiffundieren von Fremdstoffen in einen Halbleiterkoerper zur Herstellung einer elektrischen Halbleiteranordnung |
Also Published As
| Publication number | Publication date |
|---|---|
| FR950513A (fr) | 1949-09-29 |
| US2437269A (en) | 1948-03-09 |
| CH266759A (fr) | 1950-02-15 |
| BE476053A (https=) |
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