GB551209A - Rectifying contact detector systems for very short electric waves - Google Patents
Rectifying contact detector systems for very short electric wavesInfo
- Publication number
- GB551209A GB551209A GB145241A GB145241A GB551209A GB 551209 A GB551209 A GB 551209A GB 145241 A GB145241 A GB 145241A GB 145241 A GB145241 A GB 145241A GB 551209 A GB551209 A GB 551209A
- Authority
- GB
- United Kingdom
- Prior art keywords
- lecher
- detector
- chamber
- conductors
- plated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 abstract 6
- 239000013078 crystal Substances 0.000 abstract 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 239000011651 chromium Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- 229910001316 Ag alloy Inorganic materials 0.000 abstract 1
- 229910001020 Au alloy Inorganic materials 0.000 abstract 1
- 229910000566 Platinum-iridium alloy Inorganic materials 0.000 abstract 1
- 229910001260 Pt alloy Inorganic materials 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 239000012141 concentrate Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000010445 mica Substances 0.000 abstract 1
- 229910052618 mica group Inorganic materials 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- HWLDNSXPUQTBOD-UHFFFAOYSA-N platinum-iridium alloy Chemical class [Ir].[Pt] HWLDNSXPUQTBOD-UHFFFAOYSA-N 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/18—Resonant slot antennas the slot being backed by, or formed in boundary wall of, a resonant cavity ; Open cavity antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
551,209. Wireless receiving apparatus. STANDARD TELEPHONES & CABLES, Ltd. (Westem Electric Co., Inc.). Feb. 4, 1941, No. 1452. [Classes 40 (iii) and 40 (v)] An ultra short wave crystal detector comprises a body of silicon of parity in excess of 98 per cent having one highly polished surface which is plated so as to form intimate contact over a large area with a conductor on which it is mounted. Fig. 1 shows a super heterodyne receiver embodying the invention, and comprising a metallic wave receiving chamber 1 having a front aperture formed by an iris diaphragm 16. Projecting through the rear wall of the chamber is a pair of semi-circular Lecher conductors 2 of a highly conducting alloy mounted in a member 24 which is slidably adjustable by means of a spindle 26 and bell-crank 23 for tuning purposes. A lens 42 of a suitable wax serves to concentrate in the chamber 1 both the incoming signal waves and waves from a local beat oscillator 3. The separation between the Lecher pair 2 and chamber 1 is such as to constitute a short circuit for the signal frequency but not for the intermediate frequency, which is taken by leads 5 from the inner ends of the Lecher pair to an I.F. amplifier 6, second detector 8 and A.F. amplifier 9. The first detector or mixer comprises a crystal 30, Figs. 3 and 4, mounted in a recess near the top of one of the Lecher conductors and co-operates with a wire 31 mounted in the other conductor. In a modification, the crystal and wire are contained in recesses in the ends of the conductors (Fig. 7, not shown). As shown in Fig. 3, the Lecher conductors 2 are separated by a strip of mica 17 and surrounded by a close-fitting dielectric sleeve 18 enclosed in a metal tube 19 joined to an insulating block 20 through which pass the leads to the subsequent stages. Also connected to block 20 is member 24 to which adjusting pressure is applied against the action of a spring 21, Fig. 1. The detector 30 comprises a machined block of silicon which is plated with silver or chromium where it is in contrast with its support. Also by means of using a reduced plating current it is stated that the active spots only of the working surface may be chromium plated so as to give permanent working spots which are easily located. The contact-wire 31 is of tungsten or a platinumiridium alloy and-may be tipped with an alloy of gold, silver and platinum. U.S.A. Specification 937,284 is referred to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB145241A GB551209A (en) | 1941-02-04 | 1941-02-04 | Rectifying contact detector systems for very short electric waves |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB145241A GB551209A (en) | 1941-02-04 | 1941-02-04 | Rectifying contact detector systems for very short electric waves |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB551209A true GB551209A (en) | 1943-02-12 |
Family
ID=9722239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB145241A Expired GB551209A (en) | 1941-02-04 | 1941-02-04 | Rectifying contact detector systems for very short electric waves |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB551209A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2415841A (en) * | 1944-12-14 | 1947-02-18 | Bell Telephone Labor Inc | Conducting material and device and method of making them |
| US2469569A (en) * | 1945-03-02 | 1949-05-10 | Bell Telephone Labor Inc | Point contact negative resistance devices |
| US2485069A (en) * | 1944-07-20 | 1949-10-18 | Bell Telephone Labor Inc | Translating material of silicon base |
| US2514879A (en) * | 1945-07-13 | 1950-07-11 | Purdue Research Foundation | Alloys and rectifiers made thereof |
| US2572801A (en) * | 1943-06-23 | 1951-10-23 | Sylvania Electric Prod | Electrical rectifier |
| DE968125C (en) * | 1951-09-24 | 1958-01-16 | Licentia Gmbh | Process for producing a barrier-free contact with germanium |
-
1941
- 1941-02-04 GB GB145241A patent/GB551209A/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2572801A (en) * | 1943-06-23 | 1951-10-23 | Sylvania Electric Prod | Electrical rectifier |
| US2485069A (en) * | 1944-07-20 | 1949-10-18 | Bell Telephone Labor Inc | Translating material of silicon base |
| US2415841A (en) * | 1944-12-14 | 1947-02-18 | Bell Telephone Labor Inc | Conducting material and device and method of making them |
| US2469569A (en) * | 1945-03-02 | 1949-05-10 | Bell Telephone Labor Inc | Point contact negative resistance devices |
| US2514879A (en) * | 1945-07-13 | 1950-07-11 | Purdue Research Foundation | Alloys and rectifiers made thereof |
| DE968125C (en) * | 1951-09-24 | 1958-01-16 | Licentia Gmbh | Process for producing a barrier-free contact with germanium |
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