GB479825A - Photo-voltaic cells - Google Patents
Photo-voltaic cellsInfo
- Publication number
- GB479825A GB479825A GB17706/37A GB1770637A GB479825A GB 479825 A GB479825 A GB 479825A GB 17706/37 A GB17706/37 A GB 17706/37A GB 1770637 A GB1770637 A GB 1770637A GB 479825 A GB479825 A GB 479825A
- Authority
- GB
- United Kingdom
- Prior art keywords
- thallium
- disc
- tube
- sulphur
- sulphide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052716 thallium Inorganic materials 0.000 abstract 7
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 abstract 7
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 abstract 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 2
- 239000005864 Sulphur Substances 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
In making a photo-voltaic cell comprising contiguous layers of thallium and thallium treated with sulphur (to form thallous sulphide), the layer of sulphide may be formed on the thallium by exposing the metal to a glow discharge in sulphuretted hydrogen or to vaporized flowers of sulphur. Before sulphurization of the thallium, it is necessary to remove impurities, and this is done by melting the metal in vacuo and allowing it to flow through several very narrow constrictions to strain off oxide &c. The treatment of discs of thallium with H2S is effected as follows. A disc cleaned by washing in water or dilute acid is placed in an aluminium holder in an evacuated tube in which two perforated aluminium discs are located about 1/8 inch apart, and about 1/4 inch from the disc and parallel thereto. After the thallium has been finally freed from oxide by heating, H2S gas is allowed to flow through the tube and a glow discharge is produced between the electrodes. A temperature of preferably about 260 DEG C. is maintained in the tube. The alternative process of sulphurization is carried out by admitting sulphur vapour into an evacuated tube in which the thallium disc is placed and maintained heated.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US87231A US2181494A (en) | 1936-06-25 | 1936-06-25 | Light-sensitive electric device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB479825A true GB479825A (en) | 1938-02-11 |
Family
ID=22203905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB17706/37A Expired GB479825A (en) | 1936-06-25 | 1937-06-25 | Photo-voltaic cells |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US2181494A (en) |
| FR (1) | FR823551A (en) |
| GB (1) | GB479825A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2931847A (en) * | 1945-07-18 | 1960-04-05 | Robert K Dahlstrom | Photoelectric cell mounting |
| US2773158A (en) * | 1953-01-27 | 1956-12-04 | Electrol Lab & Sales Co | Housing structure for photocell or the like and method of making the same |
| US2875308A (en) * | 1953-04-25 | 1959-02-24 | Soc Nouvelle Outil Rbv Radio | Photoresistive cells |
| US3178621A (en) * | 1962-05-01 | 1965-04-13 | Mannes N Glickman | Sealed housing for electronic elements |
| JPS5624969A (en) * | 1979-08-09 | 1981-03-10 | Canon Inc | Semiconductor integrated circuit element |
| US11356052B2 (en) | 2019-01-31 | 2022-06-07 | Utica Leaseco, Llc | Energy device for use in electronic devices |
-
1936
- 1936-06-25 US US87231A patent/US2181494A/en not_active Expired - Lifetime
-
1937
- 1937-06-24 FR FR823551D patent/FR823551A/en not_active Expired
- 1937-06-25 GB GB17706/37A patent/GB479825A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US2181494A (en) | 1939-11-28 |
| FR823551A (en) | 1938-01-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2982053A (en) | Method of removing dissolved water from 96 percent silica glass | |
| US3135591A (en) | Separation of helium from a gaseous mixture by means of a novel selective diffusion barrier | |
| GB479825A (en) | Photo-voltaic cells | |
| US2095807A (en) | Fusion welding or brazing of metals | |
| CL2021002551A1 (en) | Method and device for producing a direct reduced metal. | |
| US2448518A (en) | Photocell | |
| US1576083A (en) | Method of refining gallium metal | |
| US1323075A (en) | Process of making hydrogen peroxid. | |
| GB1018405A (en) | A process for the production of highly pure hexagonal cadmium and zinc chalkogenides | |
| US2612727A (en) | Method of making ultraviolet-transmitting high-silica glasses | |
| US2491874A (en) | Manufacture of mercury-containing, gas-filled electric discharge apparatus | |
| US1229324A (en) | Process for treating silica. | |
| US1353654A (en) | Process of removing film from used metallic-filament electric lamps | |
| CN104616898B (en) | A kind of method that additional annealing treatment improves aluminium foil hair engaging aperture performance | |
| US2060663A (en) | Processing graphite | |
| CN108128778B (en) | Method for removing boron in silicon by steam-assisted electron beam melting | |
| US3154409A (en) | Process for the production of separable deposits of iodine chromium | |
| US1627977A (en) | Process for the purification of burner gases and for obtaining chemically-pure sulphuric acid | |
| GB440004A (en) | An improved method of refining selenium | |
| SU108365A1 (en) | Method of cleaning quartz glass | |
| JPS57103316A (en) | Manufacture of compound semiconductor device | |
| Reyerson | The adsorption of hydrogen by silica gel at elevated temperatures | |
| GB422880A (en) | Improvements in and relating to processes for purifying sulphuric acid | |
| SU124418A1 (en) | Hydrometallurgical method of cleaning graphite and molybdenite, intended for special lubricants, from abrasive impurities | |
| US1284176A (en) | Sulfuric-acid manufacture. |