GB435754A - Improvements in or relating to the production of carbides, carbonitrides, nitrides, borides, silicides and titanides - Google Patents

Improvements in or relating to the production of carbides, carbonitrides, nitrides, borides, silicides and titanides

Info

Publication number
GB435754A
GB435754A GB36052/33A GB3605233A GB435754A GB 435754 A GB435754 A GB 435754A GB 36052/33 A GB36052/33 A GB 36052/33A GB 3605233 A GB3605233 A GB 3605233A GB 435754 A GB435754 A GB 435754A
Authority
GB
United Kingdom
Prior art keywords
carbides
compounds
reaction chamber
carbide
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36052/33A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VER EDELSTAHL AG
Original Assignee
VER EDELSTAHL AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VER EDELSTAHL AG filed Critical VER EDELSTAHL AG
Publication of GB435754A publication Critical patent/GB435754A/en
Expired legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/05Mixtures of metal powder with non-metallic powder
    • C22C1/051Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
    • C22C1/053Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor with in situ formation of hard compounds
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/082Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/0828Carbonitrides or oxycarbonitrides of metals, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/06Metal silicides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/02Boron; Borides
    • C01B35/04Metal borides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00Compounds of titanium
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0615Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
    • C01B21/062Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with chromium, molybdenum or tungsten
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Geology (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)
  • Catalysts (AREA)

Abstract

Carbides, carbonitrides, nitrides, borides, silicides and titanides adapted for the manufacture of tools &c., are obtained from other compounds containing the desired elements by supplying heat to these compounds in their gaseous and vaporous state within the free space of a chamber by heating the latter solely from the exterior thereof to a temperature between 800--2500 DEG C. the desired compounds being precipitated out of the space in the solid form. According to a modification at least one but not all of the elements intended for the reaction are supplied in the gaseous or vaporous elemental form instead of as a compound. The elements to be converted in carbides &c. may be supplied as volatile chlorides, fluorides, iodides, oxides or carbonyls, for example, titanium tetrachloride, molybdenum hexachloride, chlorides of zirconium and tungsten, iodides and fluorides of titanium, zirconium, molybdenum, or tungsten, carbonyls of iron, nickel, cobalt, chromium, molybdenum, tungsten, vanadium, platinum, ruthenium, manganese and uranium and oxides of molybdenum and tungsten. Such compounds may be reacted with hydrocarbons such as benzol or blue gas to produce carbides, with elementary nitrogen to produce nitrides, with silicon hydride to product silicides, with boron hydride in the absence of air or oxygen, or with boron fluoride, to produce borides, and with a hydrocarbon and nitrogen to produce carbonitides. Two or more carbides, nitrides or the like may be produced simultaneously in the same reaction chamber by the introduction of a plurality of volatile compounds and/or elements. The volatile compounds or elements may be conveyed to the reaction chamber by means of carrier gases or vapours which preferably consist wholly or partially of gases which are to take part in the reaction. For example the gas mixture from which tungsten nitride is to be obtained may be produced by passing nitrogen through a solution of tungsten carbonyl. If the quantity of volatile liquid so introduced into the gas is excessive diluent gases such as hydrocarbons or nitrogen may be added. The reaction temperature may be so controlled as to cause the formation of mixed crystals between the precipitated products. For example, mixed crystals of tungsten carbide and molybdenum carbide may be produced from the respective metal carbonyls and a hydrocarbon at 1600--2000 DEG C., similarly mixed crystals of molybdenum and titanium carbide may be obtained from their chlorides and a hydrocarbon at 1400--2000 DEG C. According to examples: (1) a mixture of hydrocarbon gas and hydrogen is passed through a benzol solution of tungsten carbonyl and then through a carbon tube heated to 1200--1400 DEG C. to produce tungsten carbide; (2) a current of blue gas is passed through benzol, then through titanium tetra chloride and finally to a heated chamber, e.g. a carbon tube heated to 2000--2500 DEG C. titanium carbide being precipitated; (3) nitrogen is passed through molybdic acid heated to 1400 DEG C. in an alundum crucible, the resulting gases being blown into a reaction chamber at 800--1400 DEG C. containing a hydrocarbon to produce molybdenum carbide. The carbides &c. so obtained may be fused or sintered together or may be embedded in a matrix of a binding agent (e.g. a metal). The carbides &c. may also be allowed to drop directly into the binding agent which is at the bottom of the reaction chamber in the liquid state. Alternatively, the carbides &c. may be obtained from the gas phase simultaneously with the binding agents, both carbide &c. forming compounds and metal forming compounds being introduced into the heated reaction chamber. The binding metals, e.g. cobalt, iron, chromium, manganese or nickel may be introduced into the reaction chamber in the form of carbonyl, oxide or oxalate, if desired with the aid of a carrier gas or vapour. The non-carburization of the binding metals may be assisted by the presence of carbon monoxide. The carbides and binding agents may also be produced separately from the gas phase and then mixed. The resulting powder mixtures may be pressed into the desired form and sintered or fused. The Specification as open to inspection under Sect. 91 comprises also the employment of ammonia in the production of nitrides. This subject-matter does not appear in the Specification as accepted. Reference has been directed by the Comptroller to Specification 12314/11, [Class 1 (ii)].ALSO:Carbides, carbonitrides, nitrides, borides, silicides, and titanides adapted for the manufacture of tools &c., are obtained from other compounds containing the desired elements by supplying heat to these compounds in their gaseous and vaporous state within the free space of a chamber by heating the latter solely from the exterior thereof to a temperature between 800-2500 DEG C., the desired compounds being precipitated out of the space in the solid form. According to a modification at least one but not all of the elements intended for the reaction are supplied in the gaseous or vaporous elemental form instead of as a compound. The carbides &c. of molybdenum, tungsten, titanium, zirconium, iron, nickel, chromium, vanadium, platinum, ruthenium, manganese and uranium may be so obtained. Two or more carbides, nitrides or the like may be produced simultaneously in the same reaction chamber by the introduction of a plurality of volatile compounds and/or elements. The volatile compounds or elements may be conveyed to the reaction chamber by means of carrier gases or vapours which preferably consist wholly or partially of gases which are to take part in the reaction. If the quantity of volatile liquid so introduced into the gas is excessive diluent gases such as hydrocarbons or nitrogen may be added. The reaction temperature may be so controlled as to cause the formation of mixed crystals between the precipitated products. The carbides &c. so obtained may be fused or sintered together or may be embedded in a matrix of a binding agent, (e.g. a metal). The carbides &c. may also be allowed to drop directly into the binding agent which is at the bottom of the reaction chamber in the liquid state. Alternatively, the carbides &c. may be obtained from the gas phase simultaneously with the binding agents, both carbide &c. forming compounds and metal forming compounds being introduced into the heated reaction chamber. The binding metals, e.g. cobalt, iron, chromium. manganese or nickel may be introduced into the reaction chamber in the form of carbonyl, oxide or oxalate, if desired with the aid of a carrier gas or vapour. The non-carburization of the binding metals may be assisted by the presence of carbon monoxide. The carbides and binding agents may also be produced separately from the gas phase and then mixed. The resulting powder mixtures may be pressed into the desired form and sintered or fused. Reference has been directed by the Comptroller to Specification 12314/11, [Class 1 (ii)].ALSO:Carbides, carbonitrides, nitrides, borides, silicides, and titanides adapted for the manufacture of tools &c., are obtained from other compounds containing the desired elements by supplying heat to these compounds in their gaseous and vaporous state within the free space of a chamber by heating the latter solely from the exterior thereof to a temperature between 800-2500 DEG C., the desired compounds being precipitated out of the space in the solid form. According to a modification, at least one but not all of the elements intended for the reaction are supplied in the gaseous or vaporous elemental form instead of as a compound. Two or more carbides, nitrides or the like may be produced simultaneously in the same reaction chamber by the introduction of a plurality of volatile compounds and/or elements. The reaction temperature may be so controlled as to cause the formation of mixed crystals between the precipitated products. For example, mixed crystals of tungsten carbide and molybdenum carbide may be produced from the respective metal carbonyls and a hydrocarbon at 1600-2000 DEG C.; similarly mixed crystals of molybdenum and titanium carbide may be obtained from their chlorides and a hydrocarbon at 1400-2000 DEG C. The carbides &c. so obtained may be fused or sintered together or may be embedded in a matrix of a binding agent (e.g. a metal). The carbides &c. may also be allowed to drop directly into the binding agent which is at the bottom of the reaction chamber in the liquid state. Alternatively, the carbides &c. may be obtained from the gas phase simultaneously with the binding agents, both carbide &c. forming compounds and metal-forming compounds being introduced into the heated reaction chamber. The binding metals, e.g. cobalt, iron, chromium, manganese or nickel, may be introduced into the reaction chamber in the form of carbonyl, oxide, or oxalate, if desired with the air of a carrier gas or vapour. The non-carburization of the binding metals may be assisted by the presence of carbon monoxide. The carbides and binding agents may also be produced separately from the gas phase and then mixed. Reference has been directed by the Comptroller to Specification 12314/11, [Class 1 (ii)].
GB36052/33A 1932-12-21 1933-12-21 Improvements in or relating to the production of carbides, carbonitrides, nitrides, borides, silicides and titanides Expired GB435754A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE435754X 1932-12-21

Publications (1)

Publication Number Publication Date
GB435754A true GB435754A (en) 1935-09-23

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ID=6506813

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36052/33A Expired GB435754A (en) 1932-12-21 1933-12-21 Improvements in or relating to the production of carbides, carbonitrides, nitrides, borides, silicides and titanides

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AT (1) AT149652B (en)
GB (1) GB435754A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2622304A (en) * 1950-10-02 1952-12-23 Climax Molybdenum Co Refractory
DE900615C (en) * 1940-08-13 1953-12-28 Eisen & Stahlind Ag Process for the production of hard metal alloys for tools and work equipment
US2665474A (en) * 1950-03-18 1954-01-12 Fansteel Metallurgical Corp Highly refractory molybdenum alloys
US2773745A (en) * 1954-07-20 1956-12-11 Du Pont Process for the production of pure silicon in a coarse crystalline form
US2798989A (en) * 1951-03-10 1957-07-09 Siemens Schuckertwerke Gmbh Semiconductor devices and methods of their manufacture
US2844492A (en) * 1953-02-26 1958-07-22 Siemens Plania Werke Ag Fuer K Method of producing heat resisting metallic materials and formed bodies
US2957754A (en) * 1951-10-19 1960-10-25 Carborundum Co Method of making metal borides
US2982619A (en) * 1957-04-12 1961-05-02 Roger A Long Metallic compounds for use in hightemperature applications
US3114605A (en) * 1959-06-29 1963-12-17 Monsanto Chemicals Process for the production of boron phosphide
US3138468A (en) * 1959-06-17 1964-06-23 Allis Chalmers Mfg Co Tetraboronsilicide
US3244482A (en) * 1961-05-03 1966-04-05 Union Carbide Corp Ultrafine titanium boride
US3253886A (en) * 1961-05-09 1966-05-31 Union Carbide Corp Process for producing ultrafine powders of refractory materials
WO1980001769A1 (en) * 1979-02-26 1980-09-04 T Johannesson A process for use when producing a part by powder metallurgymethods
EP0292195A1 (en) * 1987-05-22 1988-11-23 Exxon Research And Engineering Company Method for producing metal compound-containing product
CN114524438A (en) * 2022-03-03 2022-05-24 吉林大学 High-temperature high-pressure preparation method of nickel-boron compound single-phase block material

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1355623A (en) * 1963-01-29 1964-03-20 Pechiney Prod Chimiques Sa Manufacture of fine-grained metal carbides
DE1299615B (en) * 1964-08-05 1969-07-24 Texas Instruments Inc Process for producing a firmly adhering metal carbide layer on a metal substrate

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE900615C (en) * 1940-08-13 1953-12-28 Eisen & Stahlind Ag Process for the production of hard metal alloys for tools and work equipment
US2665474A (en) * 1950-03-18 1954-01-12 Fansteel Metallurgical Corp Highly refractory molybdenum alloys
US2622304A (en) * 1950-10-02 1952-12-23 Climax Molybdenum Co Refractory
US2798989A (en) * 1951-03-10 1957-07-09 Siemens Schuckertwerke Gmbh Semiconductor devices and methods of their manufacture
US2957754A (en) * 1951-10-19 1960-10-25 Carborundum Co Method of making metal borides
US2844492A (en) * 1953-02-26 1958-07-22 Siemens Plania Werke Ag Fuer K Method of producing heat resisting metallic materials and formed bodies
US2773745A (en) * 1954-07-20 1956-12-11 Du Pont Process for the production of pure silicon in a coarse crystalline form
US2982619A (en) * 1957-04-12 1961-05-02 Roger A Long Metallic compounds for use in hightemperature applications
US3138468A (en) * 1959-06-17 1964-06-23 Allis Chalmers Mfg Co Tetraboronsilicide
US3114605A (en) * 1959-06-29 1963-12-17 Monsanto Chemicals Process for the production of boron phosphide
US3244482A (en) * 1961-05-03 1966-04-05 Union Carbide Corp Ultrafine titanium boride
US3253886A (en) * 1961-05-09 1966-05-31 Union Carbide Corp Process for producing ultrafine powders of refractory materials
WO1980001769A1 (en) * 1979-02-26 1980-09-04 T Johannesson A process for use when producing a part by powder metallurgymethods
AT374713B (en) * 1979-02-26 1984-05-25 Johannesson Thomas METHOD FOR PRODUCING A WORKPIECE ON A POWDER METALLURGICAL WAY
EP0292195A1 (en) * 1987-05-22 1988-11-23 Exxon Research And Engineering Company Method for producing metal compound-containing product
AU618262B2 (en) * 1987-05-22 1991-12-19 Exxon Research And Engineering Company Metal article and method for producing the same
CN114524438A (en) * 2022-03-03 2022-05-24 吉林大学 High-temperature high-pressure preparation method of nickel-boron compound single-phase block material

Also Published As

Publication number Publication date
AT149652B (en) 1937-05-25

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