GB2599391B - Sputter deposition apparatus and method - Google Patents

Sputter deposition apparatus and method Download PDF

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Publication number
GB2599391B
GB2599391B GB2015459.7A GB202015459A GB2599391B GB 2599391 B GB2599391 B GB 2599391B GB 202015459 A GB202015459 A GB 202015459A GB 2599391 B GB2599391 B GB 2599391B
Authority
GB
United Kingdom
Prior art keywords
deposition apparatus
sputter deposition
sputter
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2015459.7A
Other versions
GB2599391A (en
GB202015459D0 (en
Inventor
Michael Carley Sean
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dyson Technology Ltd
Original Assignee
Dyson Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dyson Technology Ltd filed Critical Dyson Technology Ltd
Priority to GB2015459.7A priority Critical patent/GB2599391B/en
Publication of GB202015459D0 publication Critical patent/GB202015459D0/en
Priority to CN202111140928.6A priority patent/CN114318261A/en
Publication of GB2599391A publication Critical patent/GB2599391A/en
Application granted granted Critical
Publication of GB2599391B publication Critical patent/GB2599391B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
GB2015459.7A 2020-09-30 2020-09-30 Sputter deposition apparatus and method Active GB2599391B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB2015459.7A GB2599391B (en) 2020-09-30 2020-09-30 Sputter deposition apparatus and method
CN202111140928.6A CN114318261A (en) 2020-09-30 2021-09-28 Sputter deposition apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2015459.7A GB2599391B (en) 2020-09-30 2020-09-30 Sputter deposition apparatus and method

Publications (3)

Publication Number Publication Date
GB202015459D0 GB202015459D0 (en) 2020-11-11
GB2599391A GB2599391A (en) 2022-04-06
GB2599391B true GB2599391B (en) 2024-01-03

Family

ID=73197266

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2015459.7A Active GB2599391B (en) 2020-09-30 2020-09-30 Sputter deposition apparatus and method

Country Status (2)

Country Link
CN (1) CN114318261A (en)
GB (1) GB2599391B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19606375A1 (en) * 1996-02-21 1997-08-28 Balzers Prozes Systeme Gmbh Microwave plasma source with Whistler or Helicon waves
GB2353293A (en) * 1999-08-18 2001-02-21 Rtc Systems Ltd FeXN deposition process based on helicon sputtering

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6132575A (en) * 1998-09-28 2000-10-17 Alcatel Magnetron reactor for providing a high density, inductively coupled plasma source for sputtering metal and dielectric films
JP2004043934A (en) * 2002-07-15 2004-02-12 Sun Tec Corp Kk Plasma sputtering process for forming thin film and film-forming apparatus
CN101390187A (en) * 2006-01-24 2009-03-18 瓦里安半导体设备公司 Plasma immersion ion source with low effective antenna voltage
GB2576543A (en) * 2018-08-23 2020-02-26 Dyson Technology Ltd An apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19606375A1 (en) * 1996-02-21 1997-08-28 Balzers Prozes Systeme Gmbh Microwave plasma source with Whistler or Helicon waves
GB2353293A (en) * 1999-08-18 2001-02-21 Rtc Systems Ltd FeXN deposition process based on helicon sputtering

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Surface and Coatings Technology, Vol. 120 - 121, 1999, Hayden et al., "Helicon plasma source for ionized physical vapor deposition", pp. 401 - 404. *

Also Published As

Publication number Publication date
GB2599391A (en) 2022-04-06
CN114318261A (en) 2022-04-12
GB202015459D0 (en) 2020-11-11

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