GB2599150B - A graphene transistor and method of manufacturing a graphene transistor - Google Patents

A graphene transistor and method of manufacturing a graphene transistor Download PDF

Info

Publication number
GB2599150B
GB2599150B GB2015321.9A GB202015321A GB2599150B GB 2599150 B GB2599150 B GB 2599150B GB 202015321 A GB202015321 A GB 202015321A GB 2599150 B GB2599150 B GB 2599150B
Authority
GB
United Kingdom
Prior art keywords
graphene transistor
manufacturing
graphene
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2015321.9A
Other versions
GB202015321D0 (en
GB2599150A (en
Inventor
James Badcock Thomas
Wallis Robert
Guiney Ivor
Thomas Simon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Paragraf Ltd
Original Assignee
Paragraf Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Paragraf Ltd filed Critical Paragraf Ltd
Priority to GB2015321.9A priority Critical patent/GB2599150B/en
Priority to GB2017408.2A priority patent/GB2599173B/en
Publication of GB202015321D0 publication Critical patent/GB202015321D0/en
Priority to US17/473,852 priority patent/US11545558B2/en
Priority to US17/478,290 priority patent/US11830925B2/en
Priority to EP21197623.8A priority patent/EP3975260A1/en
Priority to CN202111142930.7A priority patent/CN114284349A/en
Publication of GB2599150A publication Critical patent/GB2599150A/en
Priority to US18/076,117 priority patent/US12002870B2/en
Application granted granted Critical
Publication of GB2599150B publication Critical patent/GB2599150B/en
Priority to US18/498,509 priority patent/US20240063289A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66045—Field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
GB2015321.9A 2020-09-28 2020-09-28 A graphene transistor and method of manufacturing a graphene transistor Active GB2599150B (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB2015321.9A GB2599150B (en) 2020-09-28 2020-09-28 A graphene transistor and method of manufacturing a graphene transistor
GB2017408.2A GB2599173B (en) 2020-09-28 2020-11-03 A method of manufacturing a transistor
US17/473,852 US11545558B2 (en) 2020-09-28 2021-09-13 Method of manufacturing a transistor
US17/478,290 US11830925B2 (en) 2020-09-28 2021-09-17 Graphene transistor and method of manufacturing a graphene transistor
EP21197623.8A EP3975260A1 (en) 2020-09-28 2021-09-20 A graphene transistor and method of manufacturing a graphene transistor
CN202111142930.7A CN114284349A (en) 2020-09-28 2021-09-28 Graphene transistor and method of manufacturing graphene transistor
US18/076,117 US12002870B2 (en) 2020-09-28 2022-12-06 Method of manufacturing a transistor
US18/498,509 US20240063289A1 (en) 2020-09-28 2023-10-31 Graphene transistor and method of manufacturing a graphene transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2015321.9A GB2599150B (en) 2020-09-28 2020-09-28 A graphene transistor and method of manufacturing a graphene transistor

Publications (3)

Publication Number Publication Date
GB202015321D0 GB202015321D0 (en) 2020-11-11
GB2599150A GB2599150A (en) 2022-03-30
GB2599150B true GB2599150B (en) 2022-12-28

Family

ID=73197413

Family Applications (2)

Application Number Title Priority Date Filing Date
GB2015321.9A Active GB2599150B (en) 2020-09-28 2020-09-28 A graphene transistor and method of manufacturing a graphene transistor
GB2017408.2A Active GB2599173B (en) 2020-09-28 2020-11-03 A method of manufacturing a transistor

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB2017408.2A Active GB2599173B (en) 2020-09-28 2020-11-03 A method of manufacturing a transistor

Country Status (1)

Country Link
GB (2) GB2599150B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157548A (en) * 2011-02-15 2011-08-17 复旦大学 Transistor based on graphene layer
US20120181509A1 (en) * 2010-10-29 2012-07-19 Qingqing Liang Graphene device and method for manufacturing the same
WO2017029470A1 (en) * 2015-08-14 2017-02-23 Simon Charles Stewart Thomas A method of producing a two-dimensional material
WO2019138231A1 (en) * 2018-01-11 2019-07-18 Paragraf Limited A method of making graphene layer structures

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952949B (en) * 2016-01-07 2019-12-03 中芯国际集成电路制造(上海)有限公司 Graphene field effect transistor and forming method thereof
EP3206232A1 (en) * 2016-02-12 2017-08-16 Centre National de la Recherche Scientifique - CNRS - Method for obtaining a graphene-based fet, in particular a memory fet, equipped with an embedded dielectric element made by fluorination
US10283590B2 (en) * 2016-07-06 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Field-effect transistors having contacts to 2D material active region

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120181509A1 (en) * 2010-10-29 2012-07-19 Qingqing Liang Graphene device and method for manufacturing the same
CN102157548A (en) * 2011-02-15 2011-08-17 复旦大学 Transistor based on graphene layer
WO2017029470A1 (en) * 2015-08-14 2017-02-23 Simon Charles Stewart Thomas A method of producing a two-dimensional material
WO2019138231A1 (en) * 2018-01-11 2019-07-18 Paragraf Limited A method of making graphene layer structures

Also Published As

Publication number Publication date
GB202015321D0 (en) 2020-11-11
GB202017408D0 (en) 2020-12-16
GB2599173A (en) 2022-03-30
GB2599150A (en) 2022-03-30
GB2599173B (en) 2022-11-02

Similar Documents

Publication Publication Date Title
GB2570128B (en) A method of making a Graphene transistor and devices
GB2585842B (en) A method of making graphene structures and devices
EP4135590A4 (en) Swab and method of manufacturing a swab
GB2570124B (en) A method of making Graphene structures and devices
GB201708908D0 (en) A method of fabricating a field-effect transistor
GB2615867B (en) A method of forming a graphene layer structure and a graphene substrate
EP3868546C0 (en) Method and device for additive production of a component
GB202003581D0 (en) Method of manufacturing a medical device
GB2603905B (en) A method for the manufacture of an improved graphene substrate and applications therefor
GB2599150B (en) A graphene transistor and method of manufacturing a graphene transistor
GB202011636D0 (en) Modified sulfur and production method thereof
FI3752672T3 (en) A method of manufacturing a graphene/graphehe oxide layer and a graphene/graphehe oxide-coated support
EP4153067A4 (en) Hemi-bridge and methods of manufacturing and using same
GB2615341B (en) Graphene sensors and a method of manufacture
GB202000951D0 (en) Semiconductor device and method of manufacture
GB2607410B (en) A method of forming a graphene layer structure and a graphene substrate
GB201806056D0 (en) A method of manufacturing of a gate drive circuit and a gate drive circuit
GB202201804D0 (en) Graphene Production Method
SG10202101498PA (en) Semiconductor device and manufacturing method of semiconductor device
GB202202053D0 (en) A transistor and a method for the manufacture of a transistor
GB202110031D0 (en) A graphene substrate and method of forming the same
EP3907747C0 (en) Transformer and manufacturing method thereof
EP3960013C0 (en) Method of manufacturing a glove and a glove
GB202201006D0 (en) A biosensor device and a method of manufacturing a biosensor device
GB202307049D0 (en) OLED device and manufacturing method