GB2573711A - Approach to bottom dielectric isolation for vertical transport fin field effect transistors - Google Patents

Approach to bottom dielectric isolation for vertical transport fin field effect transistors Download PDF

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Publication number
GB2573711A
GB2573711A GB1911360.4A GB201911360A GB2573711A GB 2573711 A GB2573711 A GB 2573711A GB 201911360 A GB201911360 A GB 201911360A GB 2573711 A GB2573711 A GB 2573711A
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United Kingdom
Prior art keywords
field effect
fin field
approach
effect transistors
vertical transport
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GB1911360.4A
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GB201911360D0 (en
GB2573711B (en
Inventor
Mehta Sanjay
Pranatharthiharan Balasubramanian
Bi Zhenxing
Devarajan Thamarai
Sankarapandian Muthumanickam
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66553—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using inside spacers, permanent or not
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A vertical transport fin field effect transistor (VT FinFET), including one or more vertical fins on a surface of a substrate, an L-shaped or U-shaped spacer trough on the substrate adjacent to at least one of the one or more vertical fins, and a gate dielectric layer on the sidewalls of the at least one of the one or more vertical fins and the L-shaped or U-shaped spacer trough.
GB1911360.4A 2017-02-06 2018-02-17 Approach to bottom dielectric isolation for vertical transport fin field effect transistors Active GB2573711B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/425,496 US10840354B2 (en) 2017-02-06 2017-02-06 Approach to bottom dielectric isolation for vertical transport fin field effect transistors
US15/860,957 US10629702B2 (en) 2017-02-06 2018-01-03 Approach to bottom dielectric isolation for vertical transport fin field effect transistors
PCT/IB2018/050287 WO2018142233A1 (en) 2017-02-06 2018-01-17 Approach to bottom dielectric isolation for vertical transport fin field effect transistors

Publications (3)

Publication Number Publication Date
GB201911360D0 GB201911360D0 (en) 2019-09-25
GB2573711A true GB2573711A (en) 2019-11-13
GB2573711B GB2573711B (en) 2021-09-29

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ID=63037351

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GB1911360.4A Active GB2573711B (en) 2017-02-06 2018-02-17 Approach to bottom dielectric isolation for vertical transport fin field effect transistors

Country Status (6)

Country Link
US (3) US10840354B2 (en)
JP (1) JP7011190B2 (en)
CN (1) CN110235224B (en)
DE (1) DE112018000201B4 (en)
GB (1) GB2573711B (en)
WO (1) WO2018142233A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630751B (en) * 2017-03-21 2022-02-15 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof
KR102314006B1 (en) * 2017-09-11 2021-10-18 삼성전자주식회사 Vertical field effect transistor and semiconductor device including the same
CN109686702B (en) 2017-10-19 2021-02-02 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof
US10867859B2 (en) * 2017-11-17 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having isolation structures with liners
US10510874B2 (en) * 2017-11-30 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US10797138B2 (en) * 2018-04-09 2020-10-06 Globalfoundries Inc. Vertical-transport field-effect transistors with self-aligned contacts
US10916638B2 (en) * 2018-09-18 2021-02-09 International Business Machines Corporation Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance
US11309405B2 (en) 2019-06-18 2022-04-19 Samsung Electronics Co., Ltd. Vertical field effect transistor device having protruded shallow trench isolation and method for manufacturing the same
US11189712B2 (en) 2019-08-22 2021-11-30 International Business Machines Corporation Formation of vertical transport field-effect transistor structure having increased effective width
US11152266B2 (en) * 2019-10-02 2021-10-19 International Business Machines Corporation Vertical tunneling field effect transistor with dual liner bottom spacer
CN111106160B (en) 2019-12-06 2023-12-19 中国科学院微电子研究所 Semiconductor device, method of manufacturing the same, and electronic apparatus including the same
CN111106177B (en) * 2019-12-06 2023-09-29 中国科学院微电子研究所 Semiconductor device, method of manufacturing the same, and electronic apparatus including the same
US11538939B2 (en) * 2020-01-14 2022-12-27 International Business Machines Corporation Controlled bottom junctions
US11282752B2 (en) 2020-02-05 2022-03-22 Samsung Electronics Co., Ltd. Method of forming vertical field-effect transistor devices having gate liner
US11251094B2 (en) 2020-02-07 2022-02-15 International Business Machines Corporation Oxygen vacancy passivation in high-k dielectrics for vertical transport field effect transistor
CN113314605B (en) * 2020-02-26 2023-11-21 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof
US11271107B2 (en) 2020-03-24 2022-03-08 International Business Machines Corporation Reduction of bottom epitaxy parasitics for vertical transport field effect transistors
JP2022172710A (en) * 2021-05-06 2022-11-17 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device
CN115662990A (en) * 2021-07-08 2023-01-31 长鑫存储技术有限公司 Semiconductor structure and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6970372B1 (en) * 2004-06-29 2005-11-29 International Business Machines Corporation Dual gated finfet gain cell
US20070132009A1 (en) * 2003-10-09 2007-06-14 Kiyoshi Takeuchi Semiconductor device and method for producing the same
US20140084381A1 (en) * 2012-09-24 2014-03-27 Jeng-Ya D. Yeh Precision resistor for non-planar semiconductor device architecture
US20150129962A1 (en) * 2013-11-13 2015-05-14 Globalfoundries Inc. Methods of forming replacement gate structures and fins on finfet devices and the resulting devices

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416377B1 (en) 2001-06-02 2004-01-31 삼성전자주식회사 Semiconductor Transistor Utilizing L-Shaped Spacer and Method Of Fabricating The Same
US6798017B2 (en) * 2001-08-31 2004-09-28 International Business Machines Corporation Vertical dual gate field effect transistor
DE10350751B4 (en) * 2003-10-30 2008-04-24 Infineon Technologies Ag Method for producing a vertical field effect transistor and field effect memory transistor, in particular FLASH memory transistor
KR100640653B1 (en) 2005-07-15 2006-11-01 삼성전자주식회사 Method of manufacturing semiconductor device having vertical channel and semiconductor device using the same
US7524282B2 (en) 2005-08-29 2009-04-28 Boston Scientific Scimed, Inc. Cardiac sleeve apparatus, system and method of use
US7488659B2 (en) 2007-03-28 2009-02-10 International Business Machines Corporation Structure and methods for stress concentrating spacer
US7652332B2 (en) 2007-08-10 2010-01-26 International Business Machines Corporation Extremely-thin silicon-on-insulator transistor with raised source/drain
KR101320518B1 (en) * 2007-10-24 2013-12-19 삼성전자주식회사 Integrated circuit semiconductor device having stacked level transistors portion and fabrication method thereof
JP2009164589A (en) 2007-12-12 2009-07-23 Elpida Memory Inc Semiconductor device and method for manufacturing the same
JP2010123744A (en) * 2008-11-19 2010-06-03 Elpida Memory Inc Semiconductor device, and method of forming the same
US8404592B2 (en) 2009-07-27 2013-03-26 GlobalFoundries, Inc. Methods for fabricating FinFET semiconductor devices using L-shaped spacers
US9263276B2 (en) 2009-11-18 2016-02-16 International Business Machines Corporation High-k/metal gate transistor with L-shaped gate encapsulation layer
JP5087655B2 (en) * 2010-06-15 2012-12-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Semiconductor device and manufacturing method thereof
US8937369B2 (en) 2012-10-01 2015-01-20 United Microelectronics Corp. Transistor with non-uniform stress layer with stress concentrated regions
US9941271B2 (en) * 2013-10-04 2018-04-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Fin-shaped field effect transistor and capacitor structures
KR102130056B1 (en) * 2013-11-15 2020-07-03 삼성전자주식회사 Semiconductor device having fin field effect transistor and methods of forming the same
US9378975B2 (en) 2014-02-10 2016-06-28 Tokyo Electron Limited Etching method to form spacers having multiple film layers
US9564431B2 (en) * 2014-02-19 2017-02-07 Taiwan Semiconductor Manufacturing Company Limited Semiconductor structures and methods for multi-level work function
US9391200B2 (en) * 2014-06-18 2016-07-12 Stmicroelectronics, Inc. FinFETs having strained channels, and methods of fabricating finFETs having strained channels
US9698261B2 (en) * 2014-06-30 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical device architecture
US9911848B2 (en) * 2014-08-29 2018-03-06 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical transistor and method of manufacturing the same
US9373620B2 (en) 2014-09-12 2016-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Series connected transistor structure and method of manufacturing the same
US9287362B1 (en) 2014-11-21 2016-03-15 International Business Machines Corporation Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts
US9299835B1 (en) * 2014-12-04 2016-03-29 International Business Machines Corporation Vertical field effect transistors
US9312383B1 (en) * 2015-08-12 2016-04-12 International Business Machines Corporation Self-aligned contacts for vertical field effect transistors
US9368572B1 (en) 2015-11-21 2016-06-14 International Business Machines Corporation Vertical transistor with air-gap spacer
US9431305B1 (en) * 2015-12-18 2016-08-30 International Business Machines Corporation Vertical transistor fabrication and devices
US9870957B2 (en) * 2016-06-16 2018-01-16 Samsung Electronics Co., Ltd. Vertical fin field effect transistor (V-FinFET), semiconductor device having V-FinFET and method of fabricating V-FinFET
US9825031B1 (en) 2016-08-05 2017-11-21 Globalfoundries Inc. Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices
US9728635B1 (en) 2016-10-13 2017-08-08 International Business Machines Corporation Uniform gate length in vertical field effect transistors
US9773901B1 (en) * 2016-10-26 2017-09-26 International Business Machines Corporation Bottom spacer formation for vertical transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070132009A1 (en) * 2003-10-09 2007-06-14 Kiyoshi Takeuchi Semiconductor device and method for producing the same
US6970372B1 (en) * 2004-06-29 2005-11-29 International Business Machines Corporation Dual gated finfet gain cell
US20140084381A1 (en) * 2012-09-24 2014-03-27 Jeng-Ya D. Yeh Precision resistor for non-planar semiconductor device architecture
US20150129962A1 (en) * 2013-11-13 2015-05-14 Globalfoundries Inc. Methods of forming replacement gate structures and fins on finfet devices and the resulting devices

Also Published As

Publication number Publication date
CN110235224A (en) 2019-09-13
CN110235224B (en) 2023-08-11
US20180226489A1 (en) 2018-08-09
GB201911360D0 (en) 2019-09-25
US20200212202A1 (en) 2020-07-02
WO2018142233A1 (en) 2018-08-09
DE112018000201B4 (en) 2024-06-06
US10629702B2 (en) 2020-04-21
US10840354B2 (en) 2020-11-17
US11302797B2 (en) 2022-04-12
GB2573711B (en) 2021-09-29
DE112018000201T5 (en) 2019-08-14
US20180226491A1 (en) 2018-08-09
JP7011190B2 (en) 2022-01-26
JP2020507213A (en) 2020-03-05

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