GB2558195A - Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity - Google Patents

Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity Download PDF

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Publication number
GB2558195A
GB2558195A GB1617888.1A GB201617888A GB2558195A GB 2558195 A GB2558195 A GB 2558195A GB 201617888 A GB201617888 A GB 201617888A GB 2558195 A GB2558195 A GB 2558195A
Authority
GB
United Kingdom
Prior art keywords
pressure sensing
cavity
sensing device
mems pressure
csoi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB1617888.1A
Other languages
English (en)
Other versions
GB201617888D0 (en
Inventor
Albert Chiou Jen-Huang
Steven Chen Shiuh-Hui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Continental Automotive Systems Inc
Original Assignee
Continental Automotive Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Continental Automotive Systems Inc filed Critical Continental Automotive Systems Inc
Publication of GB201617888D0 publication Critical patent/GB201617888D0/en
Publication of GB2558195A publication Critical patent/GB2558195A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0059—Constitution or structural means for controlling the movement not provided for in groups B81B3/0037 - B81B3/0056
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/005—Non square semiconductive diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C10/00—Adjustable resistors
    • H01C10/10—Adjustable resistors adjustable by mechanical pressure or force
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C10/00—Adjustable resistors
    • H01C10/16—Adjustable resistors including plural resistive elements
    • H01C10/20—Contact structure or movable resistive elements being ganged
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/036—Fusion bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
GB1617888.1A 2016-10-03 2016-10-21 Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity Withdrawn GB2558195A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/283,777 US10221062B2 (en) 2016-10-03 2016-10-03 Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow cross-shaped cavity

Publications (2)

Publication Number Publication Date
GB201617888D0 GB201617888D0 (en) 2016-12-07
GB2558195A true GB2558195A (en) 2018-07-11

Family

ID=57738062

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1617888.1A Withdrawn GB2558195A (en) 2016-10-03 2016-10-21 Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity

Country Status (4)

Country Link
US (1) US10221062B2 (de)
CN (1) CN107894294B (de)
DE (1) DE102017216418A1 (de)
GB (1) GB2558195A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10302514B2 (en) * 2016-12-18 2019-05-28 Nxp Usa, Inc. Pressure sensor having a multiple wheatstone bridge configuration of sense elements
DE102019207963B4 (de) * 2018-06-04 2023-11-09 Vitesco Technologies USA, LLC (n.d.Ges.d.Staates Delaware) Csoi - mems-druckerfassungselement mit spannungsausgleichern
US11029227B2 (en) * 2018-06-04 2021-06-08 Vitesco Technologies USA, LLC CSOI MEMS pressure sensing element with stress equalizers
EP3833632A1 (de) 2018-08-09 2021-06-16 LPKF Laser & Electronics AG Verfahren zur herstellung von mikrostrukturen
CN109341907A (zh) * 2018-11-29 2019-02-15 华景传感科技（无锡）有限公司 一种压力传感器
DE102019111634A1 (de) 2019-05-06 2020-11-12 Lpkf Laser & Electronics Ag Verfahren zur Herstellung von Mikrostrukturen in einem Glassubstrat
CN111076851B (zh) * 2019-12-09 2022-03-29 中国科学院上海微系统与信息技术研究所 一种压力传感器及其制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7487681B1 (en) * 2006-08-06 2009-02-10 Silicon Microstructures Inc. Pressure sensor adjustment using backside mask

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Publication number Priority date Publication date Assignee Title
US4236137A (en) 1979-03-19 1980-11-25 Kulite Semiconductor Products, Inc. Semiconductor transducers employing flexure frames
US5178016A (en) 1989-11-15 1993-01-12 Sensym, Incorporated Silicon pressure sensor chip with a shear element on a sculptured diaphragm
US5759870A (en) * 1995-08-28 1998-06-02 Bei Electronics, Inc. Method of making a surface micro-machined silicon pressure sensor
US6093579A (en) 1998-06-01 2000-07-25 Exar Corporation Low pressure sensor with a thin boss and method of manufacture
WO2001046665A1 (en) * 1999-12-20 2001-06-28 The Foxboro Company Multivariate semiconductor pressure sensor with passageway
EP1359402B1 (de) * 2002-05-01 2014-10-01 Infineon Technologies AG Drucksensor
US7111518B1 (en) 2003-09-19 2006-09-26 Silicon Microstructures, Inc. Extremely low cost pressure sensor realized using deep reactive ion etching
EP1953814B1 (de) * 2005-11-25 2017-09-06 Panasonic Intellectual Property Management Co., Ltd. Kapselungsstruktur auf waferniveau und herstellungsverfahren dafür
US7493822B2 (en) * 2007-07-05 2009-02-24 Honeywell International Inc. Small gauge pressure sensor using wafer bonding and electrochemical etch stopping
JP5687202B2 (ja) * 2009-11-04 2015-03-18 ローム株式会社 圧力センサおよび圧力センサの製造方法
US8616065B2 (en) * 2010-11-24 2013-12-31 Honeywell International Inc. Pressure sensor
US8881596B2 (en) 2012-01-30 2014-11-11 Continental Automotive Systems, Inc. Semiconductor sensing device to minimize thermal noise
US8590389B2 (en) * 2012-02-10 2013-11-26 Metrodyne Microsystems Corporation, R.O.C. MEMS pressure sensor device and manufacturing method thereof
US9511996B2 (en) * 2012-07-31 2016-12-06 Soitec Methods of forming semiconductor structures including MEMS devices and integrated circuits on common sides of substrates, and related structures and devices
US20150135853A1 (en) * 2013-11-18 2015-05-21 Mark P. McNeal Mems pressure sensor field shield layout for surface charge immunity in oil filled packaging
GB201412246D0 (en) 2014-05-15 2014-08-20 Continental Automotive Systems Pressure sensor device with high sensitivity and high accuracy
GB2532806A (en) * 2014-11-25 2016-06-01 Continental Automotive Systems Us Inc Piezoresistive pressure sensor device
US9725312B1 (en) * 2016-02-05 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Preconditioning to enhance hydrophilic fusion bonding

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7487681B1 (en) * 2006-08-06 2009-02-10 Silicon Microstructures Inc. Pressure sensor adjustment using backside mask

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"A monolithic integration multifunctional MEMS sensor based on cavity SOI wafer" Zhang et al, Proc. IEEE sensors 2014, pages 1952-1955 *

Also Published As

Publication number Publication date
CN107894294A (zh) 2018-04-10
US20180093881A1 (en) 2018-04-05
CN107894294B (zh) 2021-03-09
GB201617888D0 (en) 2016-12-07
US10221062B2 (en) 2019-03-05
DE102017216418A1 (de) 2018-04-05

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