GB2542426A - Pixel circuit - Google Patents

Pixel circuit Download PDF

Info

Publication number
GB2542426A
GB2542426A GB1516678.8A GB201516678A GB2542426A GB 2542426 A GB2542426 A GB 2542426A GB 201516678 A GB201516678 A GB 201516678A GB 2542426 A GB2542426 A GB 2542426A
Authority
GB
United Kingdom
Prior art keywords
current mirror
photodiode
mirror circuit
bias voltage
pixel circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB1516678.8A
Other languages
English (en)
Other versions
GB201516678D0 (en
Inventor
Choubey Bhaskar
Michel Brunetti Alessandro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford University Innovation Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Priority to GB1516678.8A priority Critical patent/GB2542426A/en
Publication of GB201516678D0 publication Critical patent/GB201516678D0/en
Priority to PCT/GB2016/052907 priority patent/WO2017051154A1/fr
Priority to EP16770335.4A priority patent/EP3354010A1/fr
Publication of GB2542426A publication Critical patent/GB2542426A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
GB1516678.8A 2015-09-21 2015-09-21 Pixel circuit Withdrawn GB2542426A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB1516678.8A GB2542426A (en) 2015-09-21 2015-09-21 Pixel circuit
PCT/GB2016/052907 WO2017051154A1 (fr) 2015-09-21 2016-09-16 Circuit de pixel
EP16770335.4A EP3354010A1 (fr) 2015-09-21 2016-09-16 Circuit de pixel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1516678.8A GB2542426A (en) 2015-09-21 2015-09-21 Pixel circuit

Publications (2)

Publication Number Publication Date
GB201516678D0 GB201516678D0 (en) 2015-11-04
GB2542426A true GB2542426A (en) 2017-03-22

Family

ID=54544547

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1516678.8A Withdrawn GB2542426A (en) 2015-09-21 2015-09-21 Pixel circuit

Country Status (3)

Country Link
EP (1) EP3354010A1 (fr)
GB (1) GB2542426A (fr)
WO (1) WO2017051154A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108389548B (zh) 2018-03-16 2020-03-20 京东方科技集团股份有限公司 一种像素电路、其驱动方法及显示面板
CN113422918B (zh) * 2021-06-08 2022-10-18 天津大学 提高动态范围的像素单元、阵列与阵列驱动方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130068926A1 (en) * 2011-09-21 2013-03-21 Norikazu Okada Optical sensor and electronics device
US20150263211A1 (en) * 2012-10-12 2015-09-17 Sharp Kabushiki Kaisha Optical sensor, and electronic apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6043525A (en) * 1997-04-07 2000-03-28 Chen; Pao-Jung High speed CMOS photodetectors with wide range operating region
JP2009060424A (ja) * 2007-08-31 2009-03-19 Rohm Co Ltd 光電変換回路及びこれを用いた固体撮像装置
EP2778715A1 (fr) * 2013-03-14 2014-09-17 Agfa Healthcare Unité de pixel pour appareil de détection d'image radiographique

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130068926A1 (en) * 2011-09-21 2013-03-21 Norikazu Okada Optical sensor and electronics device
US20150263211A1 (en) * 2012-10-12 2015-09-17 Sharp Kabushiki Kaisha Optical sensor, and electronic apparatus

Also Published As

Publication number Publication date
GB201516678D0 (en) 2015-11-04
WO2017051154A1 (fr) 2017-03-30
EP3354010A1 (fr) 2018-08-01

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)