GB2541782B - Scaleable RF tuned low noise amplifier - Google Patents

Scaleable RF tuned low noise amplifier

Info

Publication number
GB2541782B
GB2541782B GB1611127.0A GB201611127A GB2541782B GB 2541782 B GB2541782 B GB 2541782B GB 201611127 A GB201611127 A GB 201611127A GB 2541782 B GB2541782 B GB 2541782B
Authority
GB
United Kingdom
Prior art keywords
scaleable
low noise
noise amplifier
tuned low
tuned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1611127.0A
Other versions
GB201611127D0 (en
GB2541782A (en
Inventor
Kresimir Stampalia Anthony
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sunrise Micro Devices Inc
Original Assignee
Sunrise Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/945,785 external-priority patent/US9819315B2/en
Application filed by Sunrise Micro Devices Inc filed Critical Sunrise Micro Devices Inc
Publication of GB201611127D0 publication Critical patent/GB201611127D0/en
Publication of GB2541782A publication Critical patent/GB2541782A/en
Application granted granted Critical
Publication of GB2541782B publication Critical patent/GB2541782B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3061—Bridge type, i.e. two complementary controlled SEPP output stages
    • H03F3/3064—Bridge type, i.e. two complementary controlled SEPP output stages with symmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/06—A balun, i.e. balanced to or from unbalanced converter, being present at the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/534—Transformer coupled at the input of an amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
GB1611127.0A 2015-07-01 2016-06-27 Scaleable RF tuned low noise amplifier Active GB2541782B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562187672P 2015-07-01 2015-07-01
US14/945,785 US9819315B2 (en) 2015-07-01 2015-11-19 Scaleable RF tuned low noise amplifier

Publications (3)

Publication Number Publication Date
GB201611127D0 GB201611127D0 (en) 2016-08-10
GB2541782A GB2541782A (en) 2017-03-01
GB2541782B true GB2541782B (en) 2018-08-22

Family

ID=56891763

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1611127.0A Active GB2541782B (en) 2015-07-01 2016-06-27 Scaleable RF tuned low noise amplifier

Country Status (1)

Country Link
GB (1) GB2541782B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3835406A (en) * 1972-10-02 1974-09-10 Gte Sylvania Inc Neutralized amplifier circuit
WO2004086608A1 (en) * 2003-03-28 2004-10-07 Koninklijke Philips Electronics N.V. Neutralization of feedback capacitance in amplifiers
US20130234798A1 (en) * 2012-03-12 2013-09-12 Fujitsu Limited Amplifier and amplification method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3835406A (en) * 1972-10-02 1974-09-10 Gte Sylvania Inc Neutralized amplifier circuit
WO2004086608A1 (en) * 2003-03-28 2004-10-07 Koninklijke Philips Electronics N.V. Neutralization of feedback capacitance in amplifiers
US20130234798A1 (en) * 2012-03-12 2013-09-12 Fujitsu Limited Amplifier and amplification method

Also Published As

Publication number Publication date
GB201611127D0 (en) 2016-08-10
GB2541782A (en) 2017-03-01

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