GB2520399B - Silicon heterojunction photovoltaic device with non-crystalline wide band gap emitter - Google Patents
Silicon heterojunction photovoltaic device with non-crystalline wide band gap emitterInfo
- Publication number
- GB2520399B GB2520399B GB1416784.5A GB201416784A GB2520399B GB 2520399 B GB2520399 B GB 2520399B GB 201416784 A GB201416784 A GB 201416784A GB 2520399 B GB2520399 B GB 2520399B
- Authority
- GB
- United Kingdom
- Prior art keywords
- band gap
- wide band
- photovoltaic device
- silicon heterojunction
- heterojunction photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361898857P | 2013-11-01 | 2013-11-01 | |
US14/267,484 US20150122329A1 (en) | 2011-11-07 | 2014-05-01 | Silicon heterojunction photovoltaic device with non-crystalline wide band gap emitter |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201416784D0 GB201416784D0 (en) | 2014-11-05 |
GB2520399A GB2520399A (en) | 2015-05-20 |
GB2520399B true GB2520399B (en) | 2017-10-25 |
Family
ID=51869348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1416784.5A Active GB2520399B (en) | 2013-11-01 | 2014-09-23 | Silicon heterojunction photovoltaic device with non-crystalline wide band gap emitter |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2520399B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61188975A (en) * | 1985-02-15 | 1986-08-22 | Sharp Corp | Manufacture of thin gaas solar cell |
US20130014813A1 (en) * | 2011-01-11 | 2013-01-17 | Weiming Wang | HIGH EFFICIENCY AND LOW COST GaInP/GaAs/Si TRIPLE JUNCTION BY EPITAXY LIFT-OFF AND MECHANICAL STACK |
US20130034924A1 (en) * | 2009-01-09 | 2013-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Diodes Fabricated by Aspect Ratio Trapping with Coalesced Films |
-
2014
- 2014-09-23 GB GB1416784.5A patent/GB2520399B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61188975A (en) * | 1985-02-15 | 1986-08-22 | Sharp Corp | Manufacture of thin gaas solar cell |
US20130034924A1 (en) * | 2009-01-09 | 2013-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Diodes Fabricated by Aspect Ratio Trapping with Coalesced Films |
US20130014813A1 (en) * | 2011-01-11 | 2013-01-17 | Weiming Wang | HIGH EFFICIENCY AND LOW COST GaInP/GaAs/Si TRIPLE JUNCTION BY EPITAXY LIFT-OFF AND MECHANICAL STACK |
Also Published As
Publication number | Publication date |
---|---|
GB2520399A (en) | 2015-05-20 |
GB201416784D0 (en) | 2014-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2973716A4 (en) | Carbon doping semiconductor devices | |
GB2524699B (en) | A bipolar junction transistor structure | |
SG11201604650SA (en) | Semiconductor device | |
EP2942816A4 (en) | Semiconductor device | |
EP2966683A4 (en) | Semiconductor device | |
SG10201707381WA (en) | Semiconductor device | |
HK1206868A1 (en) | Semiconductor device | |
TWI563660B (en) | Semiconductor device | |
EP3076431A4 (en) | Semiconductor device | |
EP2975641A4 (en) | Semiconductor device | |
EP2955836A4 (en) | Semiconductor device | |
EP2874188A4 (en) | Semiconductor device | |
GB201510735D0 (en) | Semiconductor device | |
HK1205590A1 (en) | Semiconductor device | |
HK1214032A1 (en) | Semiconductor device | |
HK1201376A1 (en) | Semiconductor device | |
EP3021485A4 (en) | Semiconductor device | |
EP3076425A4 (en) | Semiconductor device | |
HK1212820A1 (en) | Lattice mismatched heterojunction structures and devices made therefrom | |
EP3076435A4 (en) | Semiconductor device | |
HK1205356A1 (en) | Semiconductor device | |
HK1201989A1 (en) | Semiconductor device | |
EP3045090A4 (en) | Solar shading device | |
HK1208958A1 (en) | Semiconductor device | |
SG11201603049WA (en) | Semiconductor device fabrication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 20171030 |