GB2520399A

GB2520399A - Silicon heterojunction photovoltaic device with non-crystalline wide band gap emitter

Info

Publication number: GB2520399A
Application number: GB1416784.5A
Authority: GB
Inventors: Bahman Hekmatshoar-Tabari; Can Bayram
Original assignee: International Business Machines Corp
Current assignee: International Business Machines Corp
Priority date: 2013-11-01
Filing date: 2014-09-23
Publication date: 2015-05-20
Anticipated expiration: 2034-09-23
Also published as: GB2520399B; GB201416784D0

Abstract

A photovoltaic device including a single junction solar cell provided by an absorption layer 10 of a type IV semiconductor material having a first conductivity, and an emitter layer 20 of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material is non-crystalline and has a thickness that is no greater than 50 nm. Wherein, the type III-V semiconductor material may be amorphous, nano-crystalline or micro-crystalline. Also disclosed is a method of forming a photovoltaic device as above. The type IV semiconductor material may be silicon (Si), germanium (Ge), silicon-germanium (SiGe) alloy, silicon doped with carbon (Si:C) or a combination thereof. The type III-V material may be any semiconductive III-V material, including binary, tertiary and quaternary materials but is more preferably gallium nitride (GaN), indium gallium nitride (InGaN), gallium phosphide (GaP), indium phosphide (InP), gallium phosphide nitride (GaPN) or combinations thereof. The emitter layer 20 may be in direct contact with the absorption layer 10 or a buffer layer of type III-V semiconductor material may be provided between the absorption layer 10 and emitter layer 20.

Description

SILICON HETEROJTJNCTION PHOTOVOLTAIC DEVICE WITH NON-

CRYSTALLINE WIDE BAND GAP EMITTER

BACKGROUND

[0001] The present application relates to photovoltaic devices, and more particularly to photovoltaic devices such as, for example, solar cells [0002] A photovoltaic device is a device that converts the energy of incident photons to electromotive force (e.m.f), Typical photovoltaic devices include solar cells, which are configured to convert the energy in the electromagnetic radiation from the sun to electric energy. Multi-junction solar cells comprising compound semiconductors may be employed for power generation in space due to their high efficiency and radiation stability.

SUMMARY

[0003] In one embodiment, a photovoltaic device is provided that includes a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity type, and an emitter layer of a type Ill-V semiconductor material having a second conductivity type, wherein the type Ill-V semiconductor material is non-crystalline and has a thickness that is no greater than 50 nm.

[0004] In another aspect, a method of forming a photovoltaic device is provided, in which the photovoltaic device is a single junction solar cell provided by an emitter layer of a first conductivity type Ill-V semiconductor material, and an absorption layer of a second conductivity type IV semiconductor material. In one embodiment, the method may include providing an absorption layer of a crystalline type IV semiconductor material having a first conductivity, and forming an cmittcr layer of a non-crystalline typc Ill-V semiconductor material having a second conductivity on a surface of the absorption layer.

BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The following detailed description, given by way of example and not intended to limit the application solely thereto, will best be appreciated in conjunction with the accompanying drawings, wherein like reference numerals denote like elements and parts, in which: Figure 1 is a side cross-sectional view of single junction solar cell provided by an absorption layer of a type IV semiconductor material and an emitter layer of a non-crystalline type HI-v semiconductor material, in accordance with one embodiment of the present application.

Figure 2 is a side cross-sectional view of an initial structure that may be utilized to form a single junction solar cell similar to that depicted in Figure 1, wherein the initial structure includes a substrate of a type IV semiconductor material that provides the absorption layer of the single junction solar cell, in accordance with one embodiment of the present application.

Figure 3 is a side cross-sectional view depicting texturing the substrate of the type IV semiconductor material, in accordance with one embodiment of the present application.

Figure 4 is a side cross-sectional view depicting forming a non-crystalline type ill-V semiconductor material on the textured surface of the substrate of the type IV semiconductor material, wherein at least a portion of the non-crystalline type 111-V semiconductor material provides the emitter layer of the single junction solar cell, in accordance with one embodiment of the present application.

Figure 5 is a side cross-sectional view that depicts another embodiment of the present application in which the passivation layer atop the absorption layer is patterned prior to the growth of the non-crystalline 111-V emitter layer, in accordance with the present application.

Figure 6 is a side cross-sectional view depicting forming a back contact to the absorption layer, in accordance with one embodiment of the present application.

Figure 7 is a side cross-sectional view depicting forming a localized back surface field region in the absorption layer, in accordance with one embodiment of the present application.

Figure 8 is a side cross-sectional view depicting forming one or more material layers between the absorption layer and the passivation layer that is present proximate to the absorption layer's back surface, in accordance with one embodiment of the present application.

Figure 9 is a side cross-sectional view depicting a single junction solar cell in which the material layers atop the absorption layer are similar to the material layers under the absorption layer, in accordance with one embodiment of the present application.

Figure 10 is a side cross-sectional view depicting an exemplary single junction solar cell with an emitter layer formed in accordance with the principles of the present application.

Figure 1 is a plot of the experimentally measured characteristics of the single junction solar cell illustrated in Figure 10, under an illumination of] sun,

DETAILED DESCRIPTION

[0006] Detailed embodiments of the claimed stmctures and methods are disclosed herein; however, it is to be understood that the disclosed embodiments are merely illustrative of the claimed structures and methods that may be embodied in various forms. In addition, each of the examples given in connection with the various embodiments are intended to be illustrative, and not restrictive, Further, the figures are not necessarily to scale, some features may be exaggerated to show details of particular components. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a representative basis for teaching one skilled in the art to variously employ the methods and structures of the present application.

[0007] References in the specification to "one embodiment", "an embodiment", "an example embodiment", etc., indicate that the embodiment described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment, Further, when a particular feature, stmcture, or characteristic is described in connection with an embodiment, it is submitted that it is within the knowledge of one ski lied in the art to affect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.

[0008] For purposes of the description hereinafter, the terms "upper", "lower", "right", "lefi", "vertical", "horizontal", "top", bottom", and derivatives thereof shall relate to the invention, as it is oriented in the drawing figures. The terms "overlying", "atop", "positioned on " or "positioned atop" means that a first element, such as a first structure, is present on a second element, such as a second structure, wherein intervening elements, such as an interface structure, e.g. interface layer, may be present between the first element and the second element. The term "direct contact" means that a first element, such as a first structure, and a second element, such as a second structure, are connected without any intermediary conducting, insulating or semiconductor layers at the interface of the two elements.

[0009] In one embodiment, the present application provides a single junction photovoltaic device, such as a solar cell, and a method of forming the same. As used herein, a "photovoltaic device" is a device, such as a solar cell, that produces free electrons and/or vacancies, i.e., holes, when exposed to radiation, such as light, and results in the production of an electric current, A single junction photovoltaic device typically includes a semiconductor layer of a p-type conductivity that shares an interface with a semiconductor layer of an n-type conductivity, in which the interface provides an electrical junction. If the n-type and p-type regions are comprised of two different semiconductor materials, i.e., of different composition and/or crystalline structures, the junction is referred to as a heterojunction. The single junction photovoltaic device may include an emitter layer of a type ITT-V semiconductor material that is non-crystalline and an absorption layer that is composed of a type TV semiconductor material. The type lU-V semiconductor materials are compound semiconductors composed of elements from groups ill and V of the Periodic Table of Elements. A type IV semiconductor material is a semiconductor material selected from group IV of the Periodic Table of Elements, [0010] Some type ITT-V semiconductor materials are of interest for photovoltaic devices for their wide bandgap electrical properties when formed on type IV semiconductor materials, in which type IV semiconductor material have a lesser bandgap value. For example, silicon (Si) is a type IV semiconductor material having a bandgap of 1.1 eV, whereas a type ITT-V semiconductor, such as gallium nitride (GaN), has a bandgap of 3.3 eV, Type Ill-V semiconductor materials are of interest for photovoltaic devices because the presence of two or more different bandgaps allows the more efficient collection of the solar spectrum, i.e., photons with shorter wavelengths are effectively collected in the top cells, and photons having longer wavelengths are effectively collected in the bottom cells, As a result, the output voltage, and/or current of the solar cell is improved with an appropriate cell design. However, the low efficiency of multi-junction, e.g., tandem (duaL-junction), photovoltaic devices including at least a top cell composed of a type ITT-V semiconductor material and a bottom cell composed of a type IV semiconductor material have limited the advantages of type 111-V semiconductor materials, It has been determined that the low efficiencies measured from multi-junction photovoltaic devices including a top cell composed of type ITT-V semiconductor materials results from the poor epitaxial growth of type Ill-V semiconductor materials, such as gallium nitride, on the silicon of the underlying cell, The poor epitaxial growth of the Ill-V semiconductor materials causes a high density of stmctural defects in the cell of the photovoltaic device that is composed of the type 111-V semiconductor material, As a result, the carrier lifetime in the type ITT-V semiconductor material and therefore the efficiency of the cell including the type Ill-V semiconductor material is degraded.

[0011] In one embodiment, the present application takes advantage of the wide bandgap properties of type ITT-V semiconductor materials by using a single junction photovoltaic device, in which the emifter layer of the single junction photovoltaic device is composed of a type Ill-V semiconductor material that is non-crystalline and has a thickness of 50 nm or less, e.g., 10 nm or less, and the absorption layer of the single junction photovoltaic device is composed of a type IV semiconductor material instead of using a multi-junction photovoltaic device. This is because carrier collection through the non-crystalline Ill-V emitter layer is dominated by tunneling rather than diffusion, as a result of the thinness of the non-crystalline Ill-V emitter layer. As used herein, the term "single junction" denotes that the photovoltaic device only includes one p-n junction. A "p-n junction" is an interface between a first material having a p-type conductivity, such as a p-type emitter layer, and a second material having an n-type conductivity, such as an n-type absorption layer. In contrast to a single junction photovoltaic device, a multi-junction photovoltaic device is composed of muttiple p-n junctions.

[0012] Compared to a solar cell including an emitter layer composed of a type IV semiconductor material, the type Tn-V semiconductor material emitter layer of the structures and methods disclosed herein may improve the performance of the disclosed single junction solar cell in at least one of the following ways. For an n-type emitter layer of a type ITT-V semiconductor material, the lower electron affinity of the type Ill-V semiconductor material of the emitter layer compared to that of the absorption layer of the type TV semiconductor material may increase the splitting of the quasi-Fermi levels for electrons and holes at the emitter layer (by raising the quasi-Fermi level for electrons), and therefore increase the open circuit voltage of the cell, Similarly, for a p-type emitter layer of a type 111-V semiconductor material, the higher hole affinity of the type lIT-V semiconductor material compared to that of the absorption layer of the type IV semiconductor material may increase the splitting of the quasi-Fermi levels for electrons and holes (by lowering the quasi-Fermi level for holes) at the emitter layer, and therefore increase the open circuit voltage of the cell. The hole affinity of a material is defined as the sum of the bandgap and the electron affinity of that material, [0013] In another embodiment, for an n-type emitter layer of a type ITT-V semiconductor material, the larger hole affinity of the type Ill-V semiconductor material of the emitter layer compared to that of the type IV semiconductor material of the absorption layer increases the potential barrier for hole tunneling through the emitter layerjunction, and therefore reduces the dark current of the solar cell, As a result, the open circuit voltage of the solar cell is increased. Similarly, for a p-type emitter layer of a type Ill-V semiconductor material, the smaller electron affinity of the type 111-V semiconductor material compared to that of the absorption layer of the type IV semiconductor material increases the potential barrier for electron tunneling through the emitter layerjunction, and therefore reduces the dark current of the solar cell, resulting in a higher open circuit voltage, [0014] In another embodiment, the enhanced electric field at the emitter layer due to the lower electron affinity of the type Ill-V semiconductor material compared to that of the type IV semiconductor material of the absorption layer improves carrier separation at the emitter layer, and therefore the short circuit current of the solar cell.

[0015] In an even further embodiment, in comparison to an emitter layer composed of a type TV semiconductor material, the wide bandgap of the emitter layer of the type Ill-V semiconductor material reduces absorption loss within the emitter layer, particularly at short wavelengths. Therefore, in comparison to an emitter layer composed of a type IV semiconductor material, the wide bandgap of the type Ill-V semiconductor material increases the short circuit current of the solar cell including the emitter layer of the type III-V semiconductor material, [0016] Figure 1 depicts one embodiment of a single junction solar cell provided by an absorption layer 10 (also referred to as an absorber 10) of a type IV semiconductor material and an emitter layer 20 (also referred to as emitter 20) of a type Ill-V semiconductor material that is non-crystalline. The "absorption layer" of the photovoltaic device is the material that readily absorbs photons to generate charge carriers, i.e., free electrons or holes.

A portion of the photovoltaic device, between the front side and thejunction with the absorption layer 10 is referred to as the "emitter layer", and the junction is referred to as the "emitter layerjunction", The emitter layer 20 may be present atop the absorption layer 10, in which the emitter layer 20 has a conductivity type that is opposite the conductivity type of the absorption layer 10. As used herein, the term "conductivity type" denotes a semiconductor material being p-type or n-type. As used herein, "p-type" refers to the addition of impurities to an intrinsic semiconductor that creates deficiencies of valence electrons (i.e. holes). As used herein, "n-type" refers to the addition of impurities that contributes free electrons to an intrinsic semiconductor.

[0017] In one example, when the sun's energy in the form of photons collects in the cell layers, electron-hole pairs are generated in the n-type and p-type conductivity materials within the photovoltaic device. The emitter layer junction provides the required electric field for the collection of the photo-generated electrons and holes on the p-type doped and n-type doped sides of the emitter layer junction, respectively. For this reason, and in this example, at least one p-type layer of the photovoltaic device may provide the absorption layer 10, and at least one adjacent n-type layer may provide the emitter layer 20.

[0018] In one embodiment, the emitter layer 20 is comprised of at least one type Ill-V semiconductor material selected from the group consisting of gallium nitride (GaN), gallium phosphorus nitride (GaPN), aluminum antimonide (AlSb), aluminum arsenide (AlAs), aluminum nitride (MN), aluminum phosphide (AlP), boron nitride (BN), boron phosphide (BP), boron arsenide (BA5), gallium arsenide (GaAs), gallium phosphide (GaP), indium nitride (InN), indium phosphide (lnP), aluminum gallium arsenide (AIGaA5), indium gallium phosphide (InGaP), aluminum indium arsenic (AlInAs), aluminum indium antimonide (AlInSb), gallium arsenide nitride (GaAsN), gallium arsenide antimonide (GaAsSb), aluminum gallium nitride (A1GaN), aluminum gallium phosphide (A1GaP), indium gallium nitride (InGaN), indium arsenide antimonide (lnAsSb), indium gallium antimonide (hiGaSb), aluminum gallium indium phosphide (A1GaInP), aluminum gallium arsenide phosphide (A1GaAsP), indium gallium arsenide phosphide (InGaAsP), indium arsenide antimonide phosphide (InArSbP), aluminum indium arsenide phosphide (AIInA5P), aluminum gallium arsenide nitride (A1GaA5N), indium gallium arsenide nitride (lnGaAsN), indium aluminum arsenide nitride (lnAlAsN), gallium arsenide antimonide nitride (GaAsSbN), gallium indium nitride arsenide aluminum antimonide (GaInNAsSb), gallium indium arsenide antimonide phosphide (GaInAsSbP), and combinations thereof In one example, the emitter layer 20 is comprised of at least one type Ill-V semiconductor material selected from the group consisting of gallium nitride (GaN), indium gallium nitride (mOaN), gallium phosphide (GaP), indium phosphide (InP), gallium phosphide nitride (GaPN), gallium antimony nitride (GaSbN), gallium arsenide phosphorous nitride (GaA5PN), and combinations thereof. In yet another example, the emitter layer 20 is comprised of GaN, mOaN, GaP, InP and/or GaPN.

[0019] It is noted that the aforementioned type Ill-V semiconductor materials for the emitter layer 20 are provided for illustrative purposes only, as other type 111-V semiconductor materials can also be employed, so long as the electron affinity of the type 111-V semiconductor material is lower than the electron affinity of the type IV semiconductor material, arid/or the hole affinity of the type 111-V semicondnctor material is higher than that of the type IV semiconductor material. The electron and hole affinities of crystalline silicon are approximately 4.05 cv and 5.15 eV, respectively, in which the hole affinity is defined as the sum of the electron affinity and the bandgap. The electron and hole affinities of crystalline germanium are approximately 4.00 eV and 4.67 eV, respectively. For a SiGei alloy, the electron and hole affinities have a linear dependence of the composition ratio, x.

For example, when x = 0.75, the electron and hole affinities are approximately, 4.04 eV and 5.03 eV, respectively. In another example when x = 0.50, the electron and hole affinities are approximately 4.03 eV and 4.91 eV, respectively. The composition ratio may be constant or vary across the absorption layer. In the above examples, x refers to the composition ratio at the top surface of the absorption layer 10, i.e., at the emifter layerj unction.

[0020] Each of the 111-V semiconductor materials that provide the emitter layer 20 has a non-crystalline structure, A non-crystalline structure refers to an amorphous, nano-crystalline or micro-crystalline structure. The term "amorphous" denotes a non-crystalline solid, in which there is no long-range atomic order in the semiconductor material. Atomic order refers to order of the atomic bonding lengths and atomic bonding angles in the solid.

The term "nano/micro-crystalline" refers to a solid material comprised of nano/micro-sized crystalline regions distributed within an amorphous medium.

[0021] The emitter layer 20 may be composed of a single layer of type 111-V semiconductor material, or maybe a multi-layered structure of type 111-V semiconductor material, The emitter layer 20 typically has a total thickness Ti that is no greater than 50 nm. In one embodiment, the total thickness Ti of the emitter layer 20 is no greater than 10 nm. In another embodiment, the total thickness U of the emitter layer 20 may range from I nm to 8 nm. In a further embodiment, the total thickness TI of the emitter layer 20 may range from 3 nm to 5 nm, The thickness of the emitter layer 20 may be selected so that the majority of the photo-generated charge carriers tunnel through the emitter layer 20 (as well as through the passivation/buffer layers S and 25 if present), and are transferred toward the emitter electrode 35. As used herein, the term "tunneling" means the quantum-mechanical transport of a charge carrier, i,e,, electron and/hole charge carrier, across a potential energy barrier, such as the potential barrier at the p-n junction, without changing its energy, Because the thickness of the emitter layer 20 is 50 nm or less, e.g., less than 10 nm, and the charge carriers tunnel through the emitter layer 20, the requirement on the high quality of the grown emitter layer 20 is significantly reduced. A high quality semiconductor material layer typically has a defect density that is less than 1013 defects/cm3, This typically requires a dislocation density of lower than O dislocations/cm2 in an epitaxially grown material, Such a requirement is however relaxed in the present application, In one embodiment, a single junction solar cell formed in accordance with the present application having an emitter layer 20 with a thickness of 10 nm or less, and being composed of a type 111-V semiconductor material with a defect density ranging from 1013 defects/cm3 to i021 defects/cm3can be provided.

[0022] To provide a junction between the emitter layer 20 and the underlying absorption layer 10, the type Ill-V semiconductor materials that provide the emitter layer 20 may be doped to a p-type or n-type conductivity, and the type IV semiconductor material that provides the absorption layer 10 may be doped to an opposite conductivity type as the emitter layer 20, For example, when the type Ill-V semiconductor material that provides the emitter layer 20 is doped to a p-type conductivity, the type IV semiconductor material that provides the absorption layer lOis doped to an n-type conductivity. In another example, when the type Ill-V semiconductor material that provides the emitter layer 20 is doped to an n-type conductivity, the type IV semiconductor material that provides the absorption layer is doped to a p-type conductivity.

[0023] For the type 111-V semiconductor material that provides the emitter layer 20, the effect of the dopant atom, i.e., whether it is a p-type or n-type dopant, depends upon the site occupied by the dopant atom on the lattice of the base material. In a type 111-V semiconductor, atoms from group II act as acceptors, i.e., p-type, when occupying the site of a group III atom, while atoms in group VI act as donors, i.e., n-type, when they replace atoms from group V. Dopant atoms from group IV, such as silicon (Si), have the property that they can act as acceptors or donor depending on whether they occupy the site of group III or group V atoms respectively. Such impurities are known as amphoteric impurities. The dopant concentration for the dopant that dictates the conductivity type of the type 111-V semiconductor material that provides the emitter layer 20 may range from l01 atoms/cm3 to 1021 atoms/cm3. In another embodiment, the dopant concentration that dictates the conductivity type of the type Ill-V semiconductor material ranges from 1016 atoms/cm3 to 1020 atoms/cm3.

[0024] Referring to Figure 1, and in some embodiments, a buffer/passivation layer 15 of a type Ill-V semiconductor material may be present between the emitter layer 20 and the absorption layer 10. The buffer layer/passivation layer 15 may be an intrinsic or lightly doped semiconductor material. In one embodiment, the buffer /passivation layer 15 may serve to improve the surface passivation of the type IV semiconductor material that provides the absorption layer 10 due to lower doping in layer buffer/passivation layer 15 compared to that the doping concentration in the emitter layer 20. In another embodiment, the buffer/passivation layer 15 may be comprised of a material having a lower lattice mismatch with the type IV semiconductor material of the absorption layer 10 compared to the lattice mismatch between the non-crystalline type Ill-V semiconductor material of the emitter layer and the type IV semiconductor material of the absorption layer 10. By reducing the lattice mismatch between the material layers, the buffer/passivation layer 15 may reduce the generation of short range strain gradients during growth. An "intrinsic semiconductor material" (also called an undoped semiconductor) or i-type semiconductor, is a substantially pure semiconductor without any significant dopant species present. The number of charge carriers in the intrinsic semiconductor is determined by the properties of the material itself instead of the amount of impurities, i.e., dopants, Typically, in intrinsic semiconductors the number of excited electrons and the number of holes are equal (n= p). in some embodiments, the buffer/passivation layer t 5 may have a maximum dopant concentration for p-type or n-type dopant that is no greater than O atoms/cm3. The buffer/passivation layer may be intentionally or unintentionally doped. Unintentional doping may arise from the diffusion of type IV semiconductor material atoms and/or dopant atoms from the absorption layer 10 into the buffer/passivation layer 15 during the growth of the buffer/passivation layer 15, and/or subsequently, i.e., when the emitter layer 20. The buffer/passivation layer 15 may be crystalline or non-crystalline. The buffer/passivation layer 15 may also be unintentionally doped during subsequent growth process steps. The dopants may also diffUse from emitter layer 20 into the buffer/passivation layer 15. In one embodiment, the buffer/passivation layer 15 is substantially free of n-type or p-type dopants. The buffer/passivation layer 15 may be composed of any of the type Ill-V semiconductor materials that have been described above with reference to the emitter layer 20. In some embodiments, the buffer layer/passivation layer t5 may be composed of the same composition as the type Ill-V semiconductor material that provides the emitter layer 20. The buffer/passivation layer 15 may be in direct contact with a surface of the type IV semiconductor material that provides the absorption layer 10. The buffer/passivation layer 15 may be formed by the same growth techniques as that of the emitter layer 20. However, other growth techniques including epitaxial growth may be used to form the buffer layer. The thickness of the buffer/passivation layer t5 is thinner than 30 nm. In another embodiment, the thickness of the buffer/passivation layer 15 may range from 3 nm to tO nm. The buffer/passivation layer depicted in Figure 1 is an optional layer and may be omitted. in the embodiments in which the buffer/passivation layer 15 is omitted, the type HI-V semiconductor material that provides the emitter layer 20 may be in direct contact with the type IV semiconductor material that provides the absorption layer 10.

[0025] Type IV semiconductor materials that may provide the absorption layer 10 include silicon (Si), germanium (Ge), silicon germanium (SiGe), and silicon doped with carbon (Si:C). In one example, the type IV semiconductor material that provides the absorption layer 10 is silicon. The absorption layer 10 is usually a crystalline semiconductor material, such as a single crystalline or multi-crystalline semiconductor. It is noted that the aforementioned type IV semiconductor materials for the absorption layer 10 are provided for illustrative purposes only, as other type IV semiconductor material can also be employed, so long as the electron affinity ofthe 111-V semiconductor material is lower than that of the IV semiconductor material, and/or the hole affinity of the 111-V material is higher than that of the IV semiconductor material.

[0026] The absorption layer 10 is typically formed from a semiconductor substrate md typically has a conductivity type that is opposite the conductivity type of the emitter layer 20. For example, when the emitter layer 20 is doped to a p-type conductivity, the absorption layer 10 is doped to an n-type conductivity, and when the emitter layer 20 is doped to ann-type conductivity, the absorption layer 10 is doped to a p-type conductivity. In an absorption layer 10 that is composed of a type IV semiconductor material examples of p-type dopants, i.e., impurities, include but are not limited to boron, aluminum, gallium, indium and combinations thereof In one embodiment, in which the absorption layer 10 is doped to a p-type conductivity, the p-type dopant is present in a concentration ranging from lx] 9 atoms/cm3 to 1x102° atoms/cm3. In another embodiment, in which the absorption layer 10 is doped to a p-type conductivity, the p-type dopant is present in a concentration ranging from lxlO'4 atoms/cm3 to lxlO'8 atoms/cm3, In an absorption layer 10 that is composed of a type IV semiconductor material, examples of n-type dopants, i.e., impurities, include but are not limited to, antimony, arsenic, phosphorous and combinations thereof In one embodiment, in which the first conductivity type of the crystalline semiconductor material of the absorption layer 10 is n-type, the n-type dopant is present in a concentration ranging from lx] 9 atoms/cm3 to lx 1020 atoms/cm3. In another embodiment, in which the first conductivity type is n-type, the n-type dopant is present in a concentration ranging from lxlO'4 atoms/cm3 to 1K 1x0 [0027] The surface S1 of the absorption layer 10 that is in direct contact with the optional buffer/passivation layer 15, or is in direct contact with the emitter layer 20 when the optional buffer layer/passivation 15 is omitted, is typically textured. A textured (i.e., specially roughened) surface is used in solar cell applications to increase the efficiency of light absorption, The textured surface decreases the fraction of incident light lost to reflection relative to the fraction of incident light transmitted into the cell since photons incident on the side of an angled feature will be reflected onto the sides of adjacent angled features and thus have another chance to be absorbed. Moreover, the textured surface increases internal absorption, since light incident on an angled surface will typically be deflected to propagate through the device at an oblique angle, thereby increasing the length of the path taken to reach the device's back surface, as well as making it more likely that photons reflected from the device's back surface will impinge on the front surface at angles compatible with total internal reflection and light trapping. In some embodiments, the texture of the surface SI of the absorption layer 10 provides a (111) crystal orientation. In some embodiments, the absorption layer lOis Si (100) and textured to provide a (111) surface orientation. The absorption layer 10 may have a thickness T3 ranging from 100 nm to 1 mm. In one embodiment, the absorption layer 0 has a thickness T3 ranging from 500 nm to 0.5 mm, In another embodiment, the absorption layer 10 has a thickness T3 ranging from 50 microns to microns.

[0028] Still referring to Figure 1, the photovoltaic device may further include a first passivation layer 25 in direct contact with the emitter layer 20, and a second passivation layer 5 in direct contact with the absorption layer 10. The first passivation layer 25 and the second passivation layer 5 may each be composed of an intrinsic amorphous semiconductor material. The first passivation layer 25 can serve to passivate the upper surface of the emitter layer 20, and the second passivation layer 5 can serve to passivate the back surface of the absorption layer 10, wherein each of the first passivation layer 25 and the second passivation layerS can reduce electron-hole recombination. The thickness T4 of the first passivation layer 25 is typically smaller than 25 nm, although greater thicknesses can also be employed. In one embodiment, the thickness of the T4 of the passivation layer 25 is in the range of 3 nm to 8 nm. In some embodiments, the passivation layer 25 is comprised of hydrogenated amorphous Si and may contain C, Ge, 0, N, F, D and combinations thereof The thickness T5 of the second passivation layerS is typically smaller than 1 micron, although greater thicknesses can also be employed. In one embodiment, the thickness 15 of the passivation layer 5 is in the range of 50 nm to 150 nm. In another embodiment, the thickness T5 of the passivation layers is in the range of 3 nm to b nm. The first and second passivation layers 25, 5 are optional, and may be omitted.

[0029] A transparent conductive material layer 30 may be present on the first passivation layer 25. Throughout this application an element is "transparent" if the element is sufficiently transparent in the visible electromagnetic spectral range. In one embodiment, the transparent conductive material layer 30 can include a transparent conductive oxide such as, but not limited to, a fluorine-doped tin oxide (Sn02:F), an aluminum-doped zinc oxide (ZnO:Al), tin oxide (SnO) and indium tin oxide (InSnO2, or ITO for short). The thickness of the transparent conductive material layer 30 may vary depending on the type of transparent conductive material employed, as well as the technique that was used in forming the transparent conductive material. Typically, and in one embodiment, the thickness of the transparent conductive material layer 30 ranges from 20 nm to 500 nm. Other thicknesses, including those less than 20 nm and/or greater than 500 nm can also be employed. The transparent conductive material layer 30 is optional, and may be omitted.

[0030] A front contact 35 (also refered to as an emitter contact 35) is in direct contact with the transparent conductive material layer 30, and a back contact (not shown) is in electrical communication with the absorption layer 10, In one embodiment, the front contact of the solar cell consists of a set of parallel narrow finger lines and wide collector lines deposited typically at a right angle to the finger lines. The front contact 35 is typically composed of a metallic material. The metallic material that provides the front contact 35 may be any conductive paste, such as aluminum (Al) paste, silver (Ag) paste, copper (Cu) paste, or aluminum silver (AIAg) paste. The thickness of the front contact 35 can range from 100 nm to 10 micrometers, although lesser and greater thicknesses can also be employed. Similar to the front contact 35, the back contact 40 may be composed of any conductive material, such as aluminum, and may have a thickness ranging from 100 nm to micrometers, although lesser and greater thicknesses can also be employed.

[003 1] Figures 2-4 depict one embodiment of a method of forming the single junction solar cell that provides the photovoltaic device depicted in Figure 1. In one embodiment, the present application provides a method of forming a photovoltaic device 100 that includes providing an absorption layer 10 of a crystalline type IV semiconductor material having a first conductivity type, and forming an emitter layer 20 of a non-crystalline type Ill-V semiconductor material having a second conductivity type positioned on a surface of the absorption layer 10. The terms "first conductivity type" and "second conductivity type" mean that the emitter layer 20 and the absorption layer 10 have opposite conductivity types.

For example, when the emitter layer 20 is doped to a p-type conductivity type, the absorption layer 10 is doped to an n-type conductivity, and when the emitter layer 20 is doped to an n-type conductivity, the absorption layer 10 is doped to a p-type conductivity.

[0032] Figure 2 depicts one embodiment of an initial structure that may be utilized to form a single junction solar cell similar to that depicted in Figure 1, wherein the initial structure includes a substrate of a type IV semiconductor material that provides the absorption layer 10 of the single junction solar cell. Suitable compositions and thicknesses for the type IV semiconductor material of the substrate that provides the absorption layer 10 have been described above with reference to Figure 1. In one example, the substrate is composed of single crystal silicon, The dopant that provides the first conductivity type of the absorption layer 10 may be introduced to the substrate using ion implantation, gas phase doping, or may be introduced to the substrate by in-sit,, doping during the substrate formation process. In some embodiments, the substrate that provides the absorption layer 10 contains Si and has a (100) crystal orientation.

[0033] Figure 3 depicts one embodiment of texturing the substrate of the type IV semiconductor material, In one embodiment, texturing the substrate provides a textured surface SI having a (111) crystalline orientation. In one embodiment, texturing a single crystal substrate of type IV semiconductor material can be performed by etching the upper surface of the type IV semicondnctor material with a potassium hydroxide (1(011) based solution. In another embodiment, texturing a multi-crystalline substrate of type IV semiconductor material can be performed by etching the upper surface of the type IV semiconductor material with a nitric acid (HNO3)/hydrofluoric acid (HF) solution. Other solutions suitable for texturing the substrate include potassium carbonate (K2C03), In yet another embodiment, texturing can be achieved by utilizing a combination of reactive ion etching (RIE) and a mask comprising closely packed self-assembled polymer spheres. In an even further embodiment, texturing can be achieved using reactive ion etching (RIP) without an etch mask. In some embodiments, both sides of the absorption layer 10 are textured. In some embodiments, the textured backside of the absorption layer 10 improves the reflection of light from the backside of the absorption layer 10 back into the absorption layer 10, [0034] Figure 4 depicts one embodiment of forming a non-crystalline type ITT-V semiconductor material as a buffer/passivation layer 15 positioned on the textured surface Si of the substrate of the type IV semiconductor material that provides the absorption layer 10, wherein at least a portion of the non-crystalline type 111-V semiconductor material provides the emitter layer 20 of the single junction solar cell.

[0035] A number of different sources may be used for the growth of non-crystalline type 111-V semiconductor material, in some embodiments, the sources for growth of type Ill-V semiconductor material include solid sources containing indium (In), gallium (Ga), nitrogen (N), phosphorus (P) elements and combinations thereof and/or a gas precursor selected from the group consisting of trimethylgallium (TMG), trimethylindium (TMI), tertiary-butylphosphine (TBP), phosphine (PH3), ammonia (Nith), and combinations thereof Growth techniques such as liquid phase growth from liquid sources, or gas phase growth from gas sources, may be used, The temperature for growth of non-crystalline type Ill-V semiconductor materials typically ranges from 45 0°C to 900°C, although lower or higher temperatures can also be employed, The growth temperature may also depend on the growth technique, For instance, in molecular beam deposition from solid sources, the substrate temperature may be as low as 200°C. In the growth of N orP based materials by molecular beam deposition, the low substrate temperatures may be facilitated by plasma assisted cracking of gas sources such as NH3 or PH3 to provide n-type or p-type conductivities, respectively. In the case of growth by metal organic chemical vapor deposition (MOCVD), higher temperatures typically results in faster deposition, but the faster deposition may result in crystal defects and film cracking, [0036] in some embodiments, the buffer/passivation layer 15 is deposited directly on the textured surface SI of the absorption layer 0. The composition and thickness of the buffer/passivation layer 15 has been described above with reference to Figure 1. In some embodiments, buffer/passivation layer 15 is formed using the same techniques described for the growth of the emitter layer 20. However, other growth techniques including epitaxial growth may be used to form the buffer/passivation layer 15. As described above, the buffer/passivation layer 15 is an intrinsic semiconductor layer, or a lightly doped semiconductor layer, When the buffer/passivation layer iS is lightly doped, the maximum n-type or p-type dopant concentration that is present in the buffer/passivation layer 15 may be 1 0 atoms/cm3. The buffer/passivation layer 15 is optional, and may be omitted, [0037] Still referring to Figure 4, the emitter layer 20 may be deposited to be positioned on the absorption layer 10, in which the emitter layer 20 is doped to an opposite conductivity type as the absorption layer 10. In the embodiments in which the buffer!passivation layer 15 is present on the absorption layer 10, the emitter layer 20 may be grown in direct contact with the top surface of the passivationlbuffer layer 15 that is opposite the surface of the buffer/passivation layer 15 that is in direct contact with the textured surface Si of the absorption layer 10. In the embodiments in which the buffer/passivation layer 15 is present, the emitter layer 20 may be composed of a type Ill-V semiconductor material having a different composition as the buffer/passivation layer 15. In the embodiments when the buffer/passivation layer 15 is omitted, the emitter layer 20 may be grown in direct contact with the textured surface SI of the absorption layer I 0.

[0038] The emitter layer 20 may be doped with an in-situ doping process or may be doped following deposition of the material layer for the emitter layer 20 using at least one of plasma doping, ion implantation, and/or outdiffusion from a disposable diffusion source (e.g., borosilicate glass). By "in-situ" it is meant that the dopant that provides the conductivity type of the material layer, e.g., emitter layer 20, is introduced as the material layer is being formed or deposited. In one embodiment, in which the emitter layer 20 is in-situ doped to provide a p-type or n-type conductivity, the dopant gas may be selected from the group consisting of bis-cyclopentadienyl-magnesium (Cp2Mg), silane (SiH4), disilane (Si2H6), germane (GeH4), carbon tetrabromide (CBr4) and combinations thereof [0039] Referring to Figure 1, following the formation of the single junction solar cell, the first and second passivation layers 25, 5 are formed utilizing a physical vapor deposition (PVD), chemical vapor deposition (CVD), or thermal and/or plasma assisted oxidation!nitridation process. In some embodiments where the first and second passivation layers 25, 5 are composed of intrinsic amorphous hydrogenated semiconductor material, e.g., silicon, the intrinsic amorphous hydrogenated semiconductor material is deposited in a process chamber containing a semiconductor precursor source gas and a carrier gas induding hydrogen. llydrogen atoms in the hydrogen gas within the carrier gas are incorporated into the deposited material to form the intrinsic hydrogenated semiconductor material that provides the first and second passivation layers 25, 5. Tn some embodiments, the second passivation layerS maybe formed prior to the formation of the emitter layer 20.

In the embodiments in which the second passivation layer 5 is formed by thermal oxidation of the absorption layer 10 (i.e. the starting substrate) prior to the formation of the emitter layer 20, the thermal oxide formed on the top surface of the absorption layer 10 may be removed (locally or entirely) for example by wet etching prior to emitter layer 10 formation in order to provide at least a portion of the top surface of layer 10 for the growth of the emitter layer and/or buffer layers. The transparent conductive material layer 30 is typically formed using a deposition process, such as sputtering or chemical vapor deposition (CVD).

The front contact 35 may be deposited with a screen printing technique. In another embodiment, the front contact 35 is provided by the application of an etched or electroformed metal pattern. The back contact (not depicted) may be formed using similar methods as the front contact 35.

[0040] Figure 5 depicts another embodiment of the present application, in which a patterned passivation layer 40 is formed atop the absorption layer 10 prior to forming the emitter layer 20 of the non-crystalline type Ill-V semiconductor material, In this embodiment, the non-crystafline type Ill-V semiconductor material that provides the emitter layer2O is in direct contact with the absorption layer 10, and is present in the openings through the patterned passivation layer 40. In some embodiments in which the absorption layer 10 is comprised of silicon, the patterned buffer/passivation layer 40 is comprised of silicon dioxide (Si02), which may be formed by thermal oxidation and patterned using lithography or laser removal processes. An optional buffer/passivation layer iSa may be formed on top of absorption layer 10 prior to the formation of the emitter layer 20. The embodiment depicted in Figure 5 includes a process flow that may precede the formation of the second passivation layer 5.

[0041] Referring to Figure 6, and in some embodiments, the second passivation layer S may be patterned using techniques such as lithography or laser removal prior to the formation of the back contact 50. In these embodiments, the back contact 50, which is typically composed of a metal, is in direct contact with the absorption layer 10 at the regions where the second passivation layer 5 has been removed, In these embodiments, the back contact 50 is typically referred to as a localized back contact.

[0042] Referring to Figure 7, and in some embodiments in which the first passivation layer 5 has been patterned, as described with reference to Figure 6, doped regions 45 may be formed in the absorption layer 10. The doped regions 45 may be formed at areas where the first passivation layer 5 has been removed. The doped regions 45 may be formed by ion implantation or gas phase doping. In some embodiments, the doped regions 45 typically have the same conductivity, i.e., p-type or n-type conductivity, as the dopant that is present in the first passivation layer 5. The doped regions 45 depicted in Figure 7 may be referred to

as localized back surface field contacts.

[0043] Referring to Figure 8, and in some embodiments, one or more doped material layers 55 may be present between the first passivation layer 5 and the back contact 50. The one or more doped material layers 55 may be composed of hydrogenated amorphous silicon, nano-silicon, micro-silicon, poly-crystalline Si, hydrogenated amorphous germanium (a-Ge:H), nano-germanium, micro-germanium, poly-crystalline germanium, and combinations thereof, and may contain a dopant selected from carbon (C), nitrogen (N), oxygen (0), fluorine (F), deuterium (D) and combinations thereof Still referring to Figure 8, in some embodiments, a transparent conductive material 60, such as a transparent conductive oxide, e.g., fluorine-doped tin oxide (Sn02:F), may be present between the one or more doped material layers 55 and the back contact 50.

[0044] Referring to Figure 9, and in some embodiments, the backside contact structure may have the same configuration as that of the front side (emitter) contact structure, but with the doped layers 20a having the same conductivity type as that of the absorption layer 10.

The composition of the corresponding layers in the front and back of the absorption layer 10 may be different, Also, an optional layer may be present on one side, while the corresponding optional layer may not be present on the other side, If the absorption layer 10 is p-type, the Ill-V material of the backsurface-field layer 20a is chosen to have a hole affinity larger than that of the absorption layer 10. Similarly, if the absorption layer lOis n-type, the Ill-V material of the back-surface-field layer 20a is chosen to have an electron affinity lower than that of the absorption layer 10. The function of the optional passivation layer 25a is the same as that of first passivation layer 25. The transparent conductive material layer 30a is optional and may be omitted, The back contact layer 35a may be a metal grid or a blanket metal layer, [0045] Referring to Figure 10, a single junction solar cell was formed according to the principles of the present application by growing a p doped amorphous GaN emitter layer 20 on an n-type single-ciystalline silicon substrate 10, which serves as an absorption layer. The crystalline Si substrate 10 has a resistivity in the range of 02-0,3 ohm,cm, a thicimess of about 200 tm and a (100) crystalline orientation. The p doped amorphous CaN emitter layer 20 has a thickness of 10 nm and was grown by metal-orgathc chemical vapor deposition (MOCVD) from a mixture (V/Ill ratio of-500) of ammonia (NH3) and trimethylgallium (TMG); at a substrate temperature of 525 °C; under El2 carrier gas; and at mbar. Biscyclopentadienylmagnesium (DCpMg) was used as the Mg source. The amorphous GaN deposition rate was 1,17 Aisec with DcpMg flow rate of 4 nmol/sec. After the deposition, Mg was activated via rapid thermal annealing at 1000°C for 30 seconds under N7 ambient, Then, a transparent conductive electrode 30 having a thickness of 90 nm was formed by sputtering of indium-tin-oxide (ITO) at a substrate temperature of 150°C. A front contact grid 35 was formed by thermal evaporation of silver through a shadow mask, An aluminum back contact 5 was formed by thermal evaporation, [0046] Figure 1] is a plot of the experimental output characteristics of the singlejunction solar cell of Figure 10, measured under an illumination of 1 sun. The output characteristics show a short circuit current density of 18.5 mAIcm2, an open circuit voltage of 533mV and a fill-factor of 75.7%, corresponding to a conversion efficiency of 7,5%, it should be noted that the single junction device of Figure 10 lacks various elements of preferred solar cells embodiments, in particular a textured surface, a front passivation layer and a back-surface-field, which may significarnly enhance the conversion efficiency.

[0047] While the present application has been particularly shown and described with respect to preferred embodiments thereof, it will be understood by those skilled in the art that the foregoing and other changes in forms and details can be made without departing from the scope of the present application, It is therefore intended that the present application not be limited to the exact forms and details described and illustrated, but fall within the scope of the appended claims.