GB2516318B - Etched silicon structures, method of forming etched silicon structures and uses thereof - Google Patents

Etched silicon structures, method of forming etched silicon structures and uses thereof

Info

Publication number
GB2516318B
GB2516318B GB1312984.6A GB201312984A GB2516318B GB 2516318 B GB2516318 B GB 2516318B GB 201312984 A GB201312984 A GB 201312984A GB 2516318 B GB2516318 B GB 2516318B
Authority
GB
United Kingdom
Prior art keywords
etched silicon
silicon structures
forming
structures
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1312984.6A
Other versions
GB2516318A (en
GB201312984D0 (en
Inventor
Speed Jonathon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nexeon Ltd
Original Assignee
Nexeon Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexeon Ltd filed Critical Nexeon Ltd
Priority to GB1312984.6A priority Critical patent/GB2516318B/en
Publication of GB201312984D0 publication Critical patent/GB201312984D0/en
Priority to PCT/GB2014/052219 priority patent/WO2015008093A1/en
Publication of GB2516318A publication Critical patent/GB2516318A/en
Application granted granted Critical
Publication of GB2516318B publication Critical patent/GB2516318B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0404—Methods of deposition of the material by coating on electrode collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0416—Methods of deposition of the material involving impregnation with a solution, dispersion, paste or dry powder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/386—Silicon or alloys based on silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
GB1312984.6A 2013-07-19 2013-07-19 Etched silicon structures, method of forming etched silicon structures and uses thereof Expired - Fee Related GB2516318B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1312984.6A GB2516318B (en) 2013-07-19 2013-07-19 Etched silicon structures, method of forming etched silicon structures and uses thereof
PCT/GB2014/052219 WO2015008093A1 (en) 2013-07-19 2014-07-21 Method of forming etched silicon structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1312984.6A GB2516318B (en) 2013-07-19 2013-07-19 Etched silicon structures, method of forming etched silicon structures and uses thereof

Publications (3)

Publication Number Publication Date
GB201312984D0 GB201312984D0 (en) 2013-09-04
GB2516318A GB2516318A (en) 2015-01-21
GB2516318B true GB2516318B (en) 2017-02-15

Family

ID=49119020

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1312984.6A Expired - Fee Related GB2516318B (en) 2013-07-19 2013-07-19 Etched silicon structures, method of forming etched silicon structures and uses thereof

Country Status (2)

Country Link
GB (1) GB2516318B (en)
WO (1) WO2015008093A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210035811A1 (en) * 2019-08-01 2021-02-04 West Chester University Injection metal assisted catalytic etching

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110086165A1 (en) * 2009-10-08 2011-04-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Metallization of a porous silicon zone by in situ reduction and application to a fuel cell
GB2492167A (en) * 2011-06-24 2012-12-26 Nexeon Ltd Pillared particles for metal ion battery
US20130040412A1 (en) * 2010-05-07 2013-02-14 Unist Academy-Industry Research Corporation Method of forming silicon nanowires and method of fabricating lithium secondary battery using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110086165A1 (en) * 2009-10-08 2011-04-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Metallization of a porous silicon zone by in situ reduction and application to a fuel cell
US20130040412A1 (en) * 2010-05-07 2013-02-14 Unist Academy-Industry Research Corporation Method of forming silicon nanowires and method of fabricating lithium secondary battery using the same
GB2492167A (en) * 2011-06-24 2012-12-26 Nexeon Ltd Pillared particles for metal ion battery

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Japanese Journal of Applied Physics, Vol. 51, 2012, Kato et al., "Metal-Assisted Chemical Etching Using Silica Nanoparticle for the Fabrication of a Silicon Nanowire Array", pp. 02BP09-1 to 02BP09-4. *
SHIU et al., "Influence of pre-surface treatment on the morphology of silicon nanowires fabricated by metal-assisted etching", 1 January 2011, Applied Surface Science, Vol. 257, pp. 1829 - 1834. *

Also Published As

Publication number Publication date
WO2015008093A1 (en) 2015-01-22
GB2516318A (en) 2015-01-21
GB201312984D0 (en) 2013-09-04

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20170719