GB2509896B8 - Selective nanostructures growth using flexographic printing technique - Google Patents

Selective nanostructures growth using flexographic printing technique

Info

Publication number
GB2509896B8
GB2509896B8 GB201221170A GB201221170A GB2509896B8 GB 2509896 B8 GB2509896 B8 GB 2509896B8 GB 201221170 A GB201221170 A GB 201221170A GB 201221170 A GB201221170 A GB 201221170A GB 2509896 B8 GB2509896 B8 GB 2509896B8
Authority
GB
United Kingdom
Prior art keywords
selective
flexographic printing
printing technique
nanostructures growth
nanostructures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB201221170A
Other versions
GB2509896B (en
GB201221170D0 (en
GB2509896A (en
Inventor
Seng Teng Kar
Lloyd Jonathan
Deganello Davide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Swansea University
Original Assignee
Swansea University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Swansea University filed Critical Swansea University
Priority to GB201221170A priority Critical patent/GB2509896B8/en
Publication of GB201221170D0 publication Critical patent/GB201221170D0/en
Publication of GB2509896A publication Critical patent/GB2509896A/en
Publication of GB2509896B publication Critical patent/GB2509896B/en
Application granted granted Critical
Publication of GB2509896B8 publication Critical patent/GB2509896B8/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
    • G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02472—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
GB201221170A 2012-11-23 2012-11-23 Selective nanostructures growth using flexographic printing technique Expired - Fee Related GB2509896B8 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB201221170A GB2509896B8 (en) 2012-11-23 2012-11-23 Selective nanostructures growth using flexographic printing technique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB201221170A GB2509896B8 (en) 2012-11-23 2012-11-23 Selective nanostructures growth using flexographic printing technique

Publications (4)

Publication Number Publication Date
GB201221170D0 GB201221170D0 (en) 2013-01-09
GB2509896A GB2509896A (en) 2014-07-23
GB2509896B GB2509896B (en) 2017-03-29
GB2509896B8 true GB2509896B8 (en) 2019-12-04

Family

ID=47560619

Family Applications (1)

Application Number Title Priority Date Filing Date
GB201221170A Expired - Fee Related GB2509896B8 (en) 2012-11-23 2012-11-23 Selective nanostructures growth using flexographic printing technique

Country Status (1)

Country Link
GB (1) GB2509896B8 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8043889B1 (en) * 2010-07-28 2011-10-25 Sharp Laboratories Of America, Inc. Patterned chemical bath deposition of a textured thin film from a printed seed layer
KR101334601B1 (en) * 2011-10-11 2013-11-29 한국과학기술연구원 Metal nanowire with high linearity, fabrication method of the same and transparent conducting film comprising the same

Also Published As

Publication number Publication date
GB2509896B (en) 2017-03-29
GB201221170D0 (en) 2013-01-09
GB2509896A (en) 2014-07-23

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Legal Events

Date Code Title Description
S117 Correction of errors in patents and applications (sect. 117/patents act 1977)

Free format text: REQUEST FILED; REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 6 NOVEMBER 2019

S117 Correction of errors in patents and applications (sect. 117/patents act 1977)

Free format text: CORRECTIONS ALLOWED; REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 6 NOVEMBER 2019 ALLOWED ON 27 NOVEMBER 2019

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20201123