GB201221170D0 - Selective nanostructures growth using a printing technique - Google Patents
Selective nanostructures growth using a printing techniqueInfo
- Publication number
- GB201221170D0 GB201221170D0 GBGB1221170.2A GB201221170A GB201221170D0 GB 201221170 D0 GB201221170 D0 GB 201221170D0 GB 201221170 A GB201221170 A GB 201221170A GB 201221170 D0 GB201221170 D0 GB 201221170D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- selective
- printing technique
- nanostructures growth
- nanostructures
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Molecular Biology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Thin Film Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB201221170A GB2509896B8 (en) | 2012-11-23 | 2012-11-23 | Selective nanostructures growth using flexographic printing technique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB201221170A GB2509896B8 (en) | 2012-11-23 | 2012-11-23 | Selective nanostructures growth using flexographic printing technique |
Publications (4)
Publication Number | Publication Date |
---|---|
GB201221170D0 true GB201221170D0 (en) | 2013-01-09 |
GB2509896A GB2509896A (en) | 2014-07-23 |
GB2509896B GB2509896B (en) | 2017-03-29 |
GB2509896B8 GB2509896B8 (en) | 2019-12-04 |
Family
ID=47560619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB201221170A Expired - Fee Related GB2509896B8 (en) | 2012-11-23 | 2012-11-23 | Selective nanostructures growth using flexographic printing technique |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2509896B8 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114652347A (en) * | 2022-03-16 | 2022-06-24 | 北京理工大学 | Flexible ultrasonic sensor based on nano zinc oxide composite material |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8043889B1 (en) * | 2010-07-28 | 2011-10-25 | Sharp Laboratories Of America, Inc. | Patterned chemical bath deposition of a textured thin film from a printed seed layer |
KR101334601B1 (en) * | 2011-10-11 | 2013-11-29 | 한국과학기술연구원 | Metal nanowire with high linearity, fabrication method of the same and transparent conducting film comprising the same |
-
2012
- 2012-11-23 GB GB201221170A patent/GB2509896B8/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2509896A (en) | 2014-07-23 |
GB2509896B (en) | 2017-03-29 |
GB2509896B8 (en) | 2019-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
S117 | Correction of errors in patents and applications (sect. 117/patents act 1977) |
Free format text: REQUEST FILED; REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 6 NOVEMBER 2019 |
|
S117 | Correction of errors in patents and applications (sect. 117/patents act 1977) |
Free format text: CORRECTIONS ALLOWED; REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 6 NOVEMBER 2019 ALLOWED ON 27 NOVEMBER 2019 |
|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20201123 |