GB2495243B - Sensor device and method of fabricating sensor device - Google Patents

Sensor device and method of fabricating sensor device

Info

Publication number
GB2495243B
GB2495243B GB1300058.3A GB201300058A GB2495243B GB 2495243 B GB2495243 B GB 2495243B GB 201300058 A GB201300058 A GB 201300058A GB 2495243 B GB2495243 B GB 2495243B
Authority
GB
United Kingdom
Prior art keywords
sensor device
fabricating
fabricating sensor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1300058.3A
Other versions
GB2495243A (en
GB201300058D0 (en
Inventor
Stephen Patrick Wilks
Matthew Peter Elwin
Thierry Gabriel Georges Maffeis
Paul Michael Holland
Petar Igic
Alexander Mark Lord
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UWS Ventures Ltd
Original Assignee
UWS Ventures Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UWS Ventures Ltd filed Critical UWS Ventures Ltd
Publication of GB201300058D0 publication Critical patent/GB201300058D0/en
Publication of GB2495243A publication Critical patent/GB2495243A/en
Application granted granted Critical
Publication of GB2495243B publication Critical patent/GB2495243B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
GB1300058.3A 2010-07-16 2011-06-17 Sensor device and method of fabricating sensor device Expired - Fee Related GB2495243B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB201011935A GB201011935D0 (en) 2010-07-16 2010-07-16 Sensor device and method of fabricating sensor device
PCT/GB2011/000905 WO2012007704A1 (en) 2010-07-16 2011-06-17 Sensor device and method of fabricating sensor device

Publications (3)

Publication Number Publication Date
GB201300058D0 GB201300058D0 (en) 2013-02-20
GB2495243A GB2495243A (en) 2013-04-03
GB2495243B true GB2495243B (en) 2014-08-13

Family

ID=42735007

Family Applications (2)

Application Number Title Priority Date Filing Date
GB201011935A Ceased GB201011935D0 (en) 2010-07-16 2010-07-16 Sensor device and method of fabricating sensor device
GB1300058.3A Expired - Fee Related GB2495243B (en) 2010-07-16 2011-06-17 Sensor device and method of fabricating sensor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB201011935A Ceased GB201011935D0 (en) 2010-07-16 2010-07-16 Sensor device and method of fabricating sensor device

Country Status (2)

Country Link
GB (2) GB201011935D0 (en)
WO (1) WO2012007704A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060131679A1 (en) * 2004-12-20 2006-06-22 Palo Alto Research Center Incorporated Systems and methods for electrical contacts to arrays of vertically aligned nanorods
US20060240588A1 (en) * 2005-04-26 2006-10-26 Sharp Laboratories Of America, Inc. Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060131679A1 (en) * 2004-12-20 2006-06-22 Palo Alto Research Center Incorporated Systems and methods for electrical contacts to arrays of vertically aligned nanorods
US20060240588A1 (en) * 2005-04-26 2006-10-26 Sharp Laboratories Of America, Inc. Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Ali S Z et al: 'Nanowire hydrogen gas sensor employing CMOS micro-hotplate' Sensors 2009 IEEE, Piscataway, NJ, USA. 25 October 2009, pgs 114-117 *
Chen T et al: 'Patterned Zn0 nanorods network transistor fabricated by low-temperature hydrothermal process'. Microelectronic Engineering, Elsevier, Publishers BV, Amsterdam, NL. Vol 87 No5-8. 1 May 2010, pages 1483-1486 *
Chiang Jung-Lung et al, 'Ion sensitivity of the flowerlike Zn0 nanorods synthesized by the hydrothermal process'. Journal of vacuum science and technology, part B, AVS/AIP, Melville, New York, NY, US. Vol 27, No3, 27 May 2009 pgs 1462-1465 *
J W Gardner, P K Guha, F. Udrea J A Covington: 'CMOS Interfacing for Integrated Gas Sensors: A Review'. IEEE Sensors Journal. Vol 10 No12 December 2010. pgs 1833-1848. *
Santra S et al: 'Zn0 nannowires grown on SOI CMOS substrate for ethanol sensing'. Sensors and actuators B, Elsevier Sequoia, S.A, Lausanne, CH. Vol 146 No2. 29 April 2010 pgs 559-565 *

Also Published As

Publication number Publication date
GB2495243A (en) 2013-04-03
GB201300058D0 (en) 2013-02-20
GB201011935D0 (en) 2010-09-01
WO2012007704A1 (en) 2012-01-19

Similar Documents

Publication Publication Date Title
GB2493098B (en) Sensor and method of manufacture
EP2688472A4 (en) Sensor device and method
GB201005312D0 (en) Device and method of operation
GB2480326B (en) Dispensing device and method of manufacture
GB201019228D0 (en) Dialysis device and method of dialysis
IL225213A0 (en) Fish-sorting device and method
EP2638362A4 (en) Device and method of gyro sensor calibration
EP2613340A4 (en) Device manufacturing apparatus and method therefor
IL225425A0 (en) Pressure sensor real and method of use
EP2400294A4 (en) Gas sensor and method of manufacturing the same
EP2622333A4 (en) Sensor element, method of making the same, and sensor device including the same
EP2398005A4 (en) Display device and method of manufacturing same
EP2627370A4 (en) Cannular device and method of manufacture
EP2555015A4 (en) Distance measuring device and method of measuring distance
EP2573510A4 (en) Shape measuring device and shape measuring method
GB2480265B (en) A semiconductor device and a method of fabricating a semiconductor device
EP2562591A4 (en) Display device and manufacturing method therefor
EP2624451A4 (en) Piezoelectric device and method for manufacturing piezoelectric device
EP2545375A4 (en) Analyte sensor and associated methods
IL223214A0 (en) Laundry device and method of manufacture thereof
EP2750190A4 (en) Image sensor, method of manufacturing same, and inspection device
PL2552649T3 (en) Assembly device and assembly method
EP2589482A4 (en) Film production device and production method
EP2583787A4 (en) Workpiece-positioning device and battery manufacturing method
EP2548615A4 (en) Determination device and determination method

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160617