GB201300058D0 - Sensor device and method of fabricating sensor device - Google Patents

Sensor device and method of fabricating sensor device

Info

Publication number
GB201300058D0
GB201300058D0 GBGB1300058.3A GB201300058A GB201300058D0 GB 201300058 D0 GB201300058 D0 GB 201300058D0 GB 201300058 A GB201300058 A GB 201300058A GB 201300058 D0 GB201300058 D0 GB 201300058D0
Authority
GB
United Kingdom
Prior art keywords
sensor device
fabricating
fabricating sensor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB1300058.3A
Other versions
GB2495243B (en
GB2495243A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UWS Ventures Ltd
Original Assignee
UWS Ventures Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UWS Ventures Ltd filed Critical UWS Ventures Ltd
Publication of GB201300058D0 publication Critical patent/GB201300058D0/en
Publication of GB2495243A publication Critical patent/GB2495243A/en
Application granted granted Critical
Publication of GB2495243B publication Critical patent/GB2495243B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Biochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
GB1300058.3A 2010-07-16 2011-06-17 Sensor device and method of fabricating sensor device Expired - Fee Related GB2495243B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB201011935A GB201011935D0 (en) 2010-07-16 2010-07-16 Sensor device and method of fabricating sensor device
PCT/GB2011/000905 WO2012007704A1 (en) 2010-07-16 2011-06-17 Sensor device and method of fabricating sensor device

Publications (3)

Publication Number Publication Date
GB201300058D0 true GB201300058D0 (en) 2013-02-20
GB2495243A GB2495243A (en) 2013-04-03
GB2495243B GB2495243B (en) 2014-08-13

Family

ID=42735007

Family Applications (2)

Application Number Title Priority Date Filing Date
GB201011935A Ceased GB201011935D0 (en) 2010-07-16 2010-07-16 Sensor device and method of fabricating sensor device
GB1300058.3A Expired - Fee Related GB2495243B (en) 2010-07-16 2011-06-17 Sensor device and method of fabricating sensor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB201011935A Ceased GB201011935D0 (en) 2010-07-16 2010-07-16 Sensor device and method of fabricating sensor device

Country Status (2)

Country Link
GB (2) GB201011935D0 (en)
WO (1) WO2012007704A1 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7569905B2 (en) * 2004-12-20 2009-08-04 Palo Alto Research Center Incorporated Systems and methods for electrical contacts to arrays of vertically aligned nanorods
US7309621B2 (en) 2005-04-26 2007-12-18 Sharp Laboratories Of America, Inc. Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition

Also Published As

Publication number Publication date
GB2495243B (en) 2014-08-13
WO2012007704A1 (en) 2012-01-19
GB2495243A (en) 2013-04-03
GB201011935D0 (en) 2010-09-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160617