GB2489185A - Electro-optice device comprising a ridge waveguide and a PN junction and method of manufacturing said device - Google Patents

Electro-optice device comprising a ridge waveguide and a PN junction and method of manufacturing said device Download PDF

Info

Publication number
GB2489185A
GB2489185A GB1213028.2A GB201213028A GB2489185A GB 2489185 A GB2489185 A GB 2489185A GB 201213028 A GB201213028 A GB 201213028A GB 2489185 A GB2489185 A GB 2489185A
Authority
GB
United Kingdom
Prior art keywords
junction
doped region
thickness
electro
optice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB1213028.2A
Other versions
GB2489185B (en
GB201213028D0 (en
Inventor
David Thomson
Frederic Gardes
Graham Reed
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Surrey
Original Assignee
University of Surrey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Surrey filed Critical University of Surrey
Publication of GB201213028D0 publication Critical patent/GB201213028D0/en
Publication of GB2489185A publication Critical patent/GB2489185A/en
Application granted granted Critical
Publication of GB2489185B publication Critical patent/GB2489185B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
    • G02B6/1347—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion implantation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
    • G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
    • G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded

Abstract

An electro-optic device (10), comprising an insulating layer (14) and a layer (16, 18a, 18b, 20a, 20b) of light-carrying material adjacent the insulating layer. The layer of light-carrying material, such as silicon, comprises a first doped region (18a, 18b) of a first type and a second doped region (20a, 20b) of a second, different type abutting the first doped region to form a pn junction. The first doped region has a first thickness at the junction, and the second doped region has a second thickness at the junction, the first thickness being greater than the second thickness the two regions thereby, defining a waveguide rib (21) in the first doped region for propagating optical signals. Since the position of the junction coincides with the sidewall of the waveguide rib (21) a self-aligned process can be used in order to simplify the fabrication process and increase yield.
GB1213028.2A 2010-01-22 2011-01-20 Electro-optic device Active GB2489185B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1001064A GB2477131A (en) 2010-01-22 2010-01-22 Electro-optic device
PCT/GB2011/000060 WO2011089386A1 (en) 2010-01-22 2011-01-20 Electro-optice device comprising a ridge waveguide and a pn junction and method of manufacturing said device

Publications (3)

Publication Number Publication Date
GB201213028D0 GB201213028D0 (en) 2012-09-05
GB2489185A true GB2489185A (en) 2012-09-19
GB2489185B GB2489185B (en) 2018-03-21

Family

ID=42045937

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1001064A Withdrawn GB2477131A (en) 2010-01-22 2010-01-22 Electro-optic device
GB1213028.2A Active GB2489185B (en) 2010-01-22 2011-01-20 Electro-optic device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB1001064A Withdrawn GB2477131A (en) 2010-01-22 2010-01-22 Electro-optic device

Country Status (3)

Country Link
US (2) US8958678B2 (en)
GB (2) GB2477131A (en)
WO (1) WO2011089386A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101758141B1 (en) * 2010-09-17 2017-07-14 삼성전자주식회사 Optoelectronic device having vertical slabs
FR3011346A1 (en) * 2013-10-02 2015-04-03 St Microelectronics Sa ELECTRO-OPTICAL DEHASTER WITH OXIDE CAPABILITY
WO2015108589A2 (en) * 2013-10-22 2015-07-23 Massachusetts Institute Of Technology Waveguide formation using cmos fabrication techniques
WO2015098027A1 (en) * 2013-12-25 2015-07-02 日本電気株式会社 Optical waveguide element and method for manufacturing optical waveguide element
US9766484B2 (en) 2014-01-24 2017-09-19 Cisco Technology, Inc. Electro-optical modulator using waveguides with overlapping ridges
GB2543122B (en) 2015-11-12 2018-07-18 Rockley Photonics Ltd An optoelectronic component
US10928659B2 (en) * 2014-02-24 2021-02-23 Rockley Photonics Limited Optoelectronic device
FR3029301B1 (en) * 2014-12-01 2017-01-06 Commissariat Energie Atomique METHOD FOR PRODUCING A WAVEGUIDE INCLUDING SEMICONDUCTOR JUNCTION
US10921616B2 (en) 2016-11-23 2021-02-16 Rockley Photonics Limited Optoelectronic device
US11150494B2 (en) 2015-03-05 2021-10-19 Rockley Photonics Limited Waveguide modulator structures
JP6062496B1 (en) * 2015-06-26 2017-01-18 株式会社フジクラ Optical waveguide device
WO2017052467A1 (en) * 2015-09-25 2017-03-30 Optic2Connect (O2C) Pte Ltd A modulator circuit and method of forming thereof
US10908440B1 (en) 2015-10-12 2021-02-02 National Technology & Engineering Solutions Of Sandia, Llc Methods of epsilon-near-zero optical modulation
US10908438B1 (en) 2015-10-12 2021-02-02 National Technology & Engineering Solutions Of Sandia, Llc Electroabsorption optical modulator
US11101256B2 (en) 2016-11-23 2021-08-24 Rockley Photonics Limited Optical modulators
GB2559458B (en) 2016-12-02 2020-06-03 Rockley Photonics Ltd Waveguide device and method of doping a waveguide device
WO2018100157A1 (en) 2016-12-02 2018-06-07 Rockley Photonics Limited Waveguide optoelectronic device
GB2561811A (en) * 2017-01-25 2018-10-31 Rockley Photonics Ltd Optical device
US11226504B2 (en) * 2019-07-19 2022-01-18 Ciena Corporation Free-carrier absorption variable optical attenuators and thermal phase shifters formed by an optical waveguide having multiple passes in an intrinsic region

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000058776A1 (en) * 1999-03-25 2000-10-05 Bookham Technology Plc Phase modulator for semiconductor waveguide
GB2373921A (en) * 2001-03-27 2002-10-02 Bookham Technology Plc Fabrication of integrated modulated waveguide structures by self-alignment process
US6999670B1 (en) * 2002-08-27 2006-02-14 Luxtera, Inc. Active waveguides for optoelectronic devices
WO2008105854A1 (en) * 2007-03-01 2008-09-04 Lucent Technologies Inc. High speed semiconductor optical modulator

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4997246A (en) * 1989-12-21 1991-03-05 International Business Machines Corporation Silicon-based rib waveguide optical modulator
US6845198B2 (en) * 2003-03-25 2005-01-18 Sioptical, Inc. High-speed silicon-based electro-optic modulator
US7116853B2 (en) * 2003-08-15 2006-10-03 Luxtera, Inc. PN diode optical modulators fabricated in rib waveguides
US7354789B2 (en) * 2003-11-04 2008-04-08 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same
US8149493B2 (en) * 2008-09-06 2012-04-03 Sifotonics Technologies (Usa) Inc. Electro-optic silicon modulator
US7747122B2 (en) * 2008-09-30 2010-06-29 Intel Corporation Method and apparatus for high speed silicon optical modulation using PN diode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000058776A1 (en) * 1999-03-25 2000-10-05 Bookham Technology Plc Phase modulator for semiconductor waveguide
GB2373921A (en) * 2001-03-27 2002-10-02 Bookham Technology Plc Fabrication of integrated modulated waveguide structures by self-alignment process
US6999670B1 (en) * 2002-08-27 2006-02-14 Luxtera, Inc. Active waveguides for optoelectronic devices
WO2008105854A1 (en) * 2007-03-01 2008-09-04 Lucent Technologies Inc. High speed semiconductor optical modulator

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Richard S. Muller & Theodore I. Kamins "Device electronics for integrated circuits" 1986, John Wiley & Sons, XP002631051, Pages 14-15 *
THOMSON D J ET AL: "High speed silicon optical modulator with self-aligned fabrication process" Group iv photonics (GFP), 2010 7th IEEEinternational conference, 01/09/2010, pages 81-83, XP031806954, ISBN: 978-1-4244-6344-2 *

Also Published As

Publication number Publication date
WO2011089386A1 (en) 2011-07-28
US20130058606A1 (en) 2013-03-07
GB2489185B (en) 2018-03-21
US8958678B2 (en) 2015-02-17
US9547187B2 (en) 2017-01-17
GB201213028D0 (en) 2012-09-05
GB2477131A (en) 2011-07-27
US20150160483A1 (en) 2015-06-11
GB201001064D0 (en) 2010-03-10

Similar Documents

Publication Publication Date Title
GB2489185A (en) Electro-optice device comprising a ridge waveguide and a PN junction and method of manufacturing said device
GB2490850A (en) Electro-optic device
WO2015020821A3 (en) Image sensor with buried light shield and vertical gate
CN110325900B (en) Waveguide optoelectronic device
KR102116977B1 (en) Athermal optical modulator and method of manufacturing the same
WO2010117701A3 (en) Optical device with large thermal impedance
US20130092980A1 (en) Photodetector structures including cross-sectional waveguide boundaries
GB2515930A (en) A Method of fabricating tunnel transistors with abrupt junctions
WO2011090573A3 (en) Hybrid silicon vertical cavity laser with in-plane coupling
WO2011140273A3 (en) Photovoltaic devices and associated methods
GB2492627B (en) Oxide thin film transistor and method of fabricating the same
GB2522589A (en) Method and structure for forming a localized SOI finFET
GB201112428D0 (en) Coupled waveguide apparatus and structures therefor
TW200717052A (en) Ridge technique for fabricating an optical detector and an optical waveguide
GB2562334A (en) Optoelectronic device
US20150378185A1 (en) Silicon-Based Rib-Waveguide Modulator And Fabrication Method Thereof
WO2017058319A3 (en) Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
EP2592454A4 (en) Optical module and manufacturing method thereof
TW200701577A (en) Semiconductor laser device
Luo et al. Strong electro-absorption in GeSi epitaxy on silicon-on-insulator (SOI)
US9891451B2 (en) Rib-type waveguide silicon modulators and optical devices
WO2012006119A3 (en) High voltage photo-switch package module
WO2016007428A8 (en) Micro-disc modulator, silicon photonic device and optoelectronic communication apparatus using the same
KR20170071074A (en) Mach-zehnder electro-optic modulator and fabrication method of the same
WO2019166875A8 (en) Electro-absorption modulator

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20190808 AND 20190814

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20200116 AND 20200122