GB2430551B - Use of an active wafer temperature control independent from wafer emissivity - Google Patents

Use of an active wafer temperature control independent from wafer emissivity

Info

Publication number
GB2430551B
GB2430551B GB0620832A GB0620832A GB2430551B GB 2430551 B GB2430551 B GB 2430551B GB 0620832 A GB0620832 A GB 0620832A GB 0620832 A GB0620832 A GB 0620832A GB 2430551 B GB2430551 B GB 2430551B
Authority
GB
United Kingdom
Prior art keywords
wafer
temperature control
emissivity
control independent
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0620832A
Other versions
GB0620832D0 (en
GB2430551A (en
Inventor
Jack Hwang
Robert James
Eric J Lambert
Jonathan Leonard
Richard Brindos
Karson L Knutson
Mark Armstrong
Justin Sandford
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/882,894 external-priority patent/US20060004493A1/en
Priority claimed from US11/156,381 external-priority patent/US20060286807A1/en
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB0620832D0 publication Critical patent/GB0620832D0/en
Publication of GB2430551A publication Critical patent/GB2430551A/en
Application granted granted Critical
Publication of GB2430551B publication Critical patent/GB2430551B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
GB0620832A 2004-06-30 2005-06-27 Use of an active wafer temperature control independent from wafer emissivity Expired - Fee Related GB2430551B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/882,894 US20060004493A1 (en) 2004-06-30 2004-06-30 Use of active temperature control to provide emmisivity independent wafer temperature
US11/156,381 US20060286807A1 (en) 2005-06-16 2005-06-16 Use of active temperature control to provide emmisivity independent wafer temperature
PCT/US2005/022979 WO2006004783A1 (en) 2004-06-30 2005-06-27 Use of an active wafer temperature control independent from wafer emissivity

Publications (3)

Publication Number Publication Date
GB0620832D0 GB0620832D0 (en) 2006-12-13
GB2430551A GB2430551A (en) 2007-03-28
GB2430551B true GB2430551B (en) 2009-11-04

Family

ID=35124365

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0620832A Expired - Fee Related GB2430551B (en) 2004-06-30 2005-06-27 Use of an active wafer temperature control independent from wafer emissivity

Country Status (4)

Country Link
DE (1) DE112005001387B4 (en)
GB (1) GB2430551B (en)
TW (1) TWI366234B (en)
WO (1) WO2006004783A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7860379B2 (en) 2007-01-15 2010-12-28 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
WO2018144901A1 (en) 2017-02-03 2018-08-09 Geodynamics, Inc. Proppant transport efficiency system and method
CN115989568A (en) * 2020-09-28 2023-04-18 株式会社国际电气 Temperature control method, method for manufacturing semiconductor device, program, and substrate processing apparatus
CN116988157B (en) * 2023-09-26 2023-12-05 山西第三代半导体技术创新中心有限公司 Silicon carbide seed crystal bonding furnace capable of reducing crystal growth holes

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482559A (en) * 1993-10-21 1996-01-09 Tokyo Electron Kabushiki Kaisha Heat treatment boat
US5834059A (en) * 1994-03-31 1998-11-10 Applied Materials, Inc. Process of depositing a layer of material on a wafer with susceptor back coating
US20020033232A1 (en) * 1999-09-10 2002-03-21 Ivo Raaijmakers Quartz wafer processing chamber
US20020040897A1 (en) * 2000-10-03 2002-04-11 Takashi Shigeoka Thermal process apparatus for measuring accurate temperature by a radiation thermometer
US6375749B1 (en) * 1999-07-14 2002-04-23 Seh America, Inc. Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7037797B1 (en) * 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
US20020004897A1 (en) * 2000-07-05 2002-01-10 Min-Cheng Kao Data processing apparatus for executing multiple instruction sets
US6888104B1 (en) * 2004-02-05 2005-05-03 Applied Materials, Inc. Thermally matched support ring for substrate processing chamber

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482559A (en) * 1993-10-21 1996-01-09 Tokyo Electron Kabushiki Kaisha Heat treatment boat
US5834059A (en) * 1994-03-31 1998-11-10 Applied Materials, Inc. Process of depositing a layer of material on a wafer with susceptor back coating
US6375749B1 (en) * 1999-07-14 2002-04-23 Seh America, Inc. Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
US20020033232A1 (en) * 1999-09-10 2002-03-21 Ivo Raaijmakers Quartz wafer processing chamber
US20020040897A1 (en) * 2000-10-03 2002-04-11 Takashi Shigeoka Thermal process apparatus for measuring accurate temperature by a radiation thermometer

Also Published As

Publication number Publication date
WO2006004783A1 (en) 2006-01-12
GB0620832D0 (en) 2006-12-13
TW200614382A (en) 2006-05-01
GB2430551A (en) 2007-03-28
TWI366234B (en) 2012-06-11
DE112005001387T5 (en) 2009-03-12
DE112005001387B4 (en) 2013-08-22

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20140627