GB2426628A - Photoluminescent radiator, semiconductor photocell and octron based thereon - Google Patents

Photoluminescent radiator, semiconductor photocell and octron based thereon

Info

Publication number
GB2426628A
GB2426628A GB0617374A GB0617374A GB2426628A GB 2426628 A GB2426628 A GB 2426628A GB 0617374 A GB0617374 A GB 0617374A GB 0617374 A GB0617374 A GB 0617374A GB 2426628 A GB2426628 A GB 2426628A
Authority
GB
United Kingdom
Prior art keywords
radiation
radiator
lead selenide
mkm
additive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0617374A
Other versions
GB2426628B (en
GB0617374D0 (en
GB2426628A8 (en
Inventor
Sergei Pavlovich Varfolomeev
Lev Kuzmich Diikov
Valery Mikhailovich Marakhonov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEDOR KONSTSNTINOVICH MEDVEDEV
Borovichsky Kombinat Ogneuporov OAO
Original Assignee
FEDOR KONSTSNTINOVICH MEDVEDEV
Borovichsky Kombinat Ogneuporov OAO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from RU2004104374/28A external-priority patent/RU2261502C1/en
Application filed by FEDOR KONSTSNTINOVICH MEDVEDEV, Borovichsky Kombinat Ogneuporov OAO filed Critical FEDOR KONSTSNTINOVICH MEDVEDEV
Publication of GB0617374D0 publication Critical patent/GB0617374D0/en
Publication of GB2426628A publication Critical patent/GB2426628A/en
Publication of GB2426628A8 publication Critical patent/GB2426628A8/en
Application granted granted Critical
Publication of GB2426628B publication Critical patent/GB2426628B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

The group of inventions relates to semiconductor devices generating and converting an infrared radiation a spectral range of 0.5-5 mkm. The invention is characterised in that a known photoluminescent radiator comprising an electroluminescent diode which is made of a gallium arsenide and generates an initial radiation in the wavelength range of 0.8-0.9 mkm and a polycrystalline lead selenide layer which is applied to a dielectric substrate, absorbs the initial radiation and reradiates within the wavelength range of 2-5 mkm, contains the lead selenide which additionally contains an additive directionally modifying the position of the wave length of a peak radiation, a radiation pulse build-up and decay time and an additive increasing the radiation power. A known photocell comprising a lead selenide layer arranged on a dielectric substrate which is provided with a potential barrier formed therein contains the lead selenide into which the additives similar to the additive introduced in the radiator lead selenide are added. The octron comprises the inventive radiator and photocells.
GB0617374A 2004-02-05 2004-09-16 Photoluminescent radiator, semiconductor photocell and optron based thereon Expired - Fee Related GB2426628B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
RU2004104234 2004-02-05
RU2004104374/28A RU2261502C1 (en) 2004-02-05 2004-02-05 Photo-luminescent emitter, semiconductor element and optron based on said devices
PCT/RU2004/000364 WO2005076375A1 (en) 2004-02-05 2004-09-16 Photoluminescent radiator, semiconductor photocell and octron based thereon

Publications (4)

Publication Number Publication Date
GB0617374D0 GB0617374D0 (en) 2006-10-18
GB2426628A true GB2426628A (en) 2006-11-29
GB2426628A8 GB2426628A8 (en) 2007-01-11
GB2426628B GB2426628B (en) 2008-04-02

Family

ID=34840315

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0617374A Expired - Fee Related GB2426628B (en) 2004-02-05 2004-09-16 Photoluminescent radiator, semiconductor photocell and optron based thereon

Country Status (2)

Country Link
GB (1) GB2426628B (en)
WO (1) WO2005076375A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4406050A (en) * 1982-03-17 1983-09-27 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating lead halide sensitized infrared photodiodes
US4853339A (en) * 1988-07-27 1989-08-01 The United States Of America As Represented By The Secretary Of The Navy Method of sensitizing Pb-salt epitaxial films for schottky diodes
WO1993007647A1 (en) * 1991-10-01 1993-04-15 Asea Brown Boveri Ab A monolithic optocoupler
RU2025833C1 (en) * 1991-04-22 1994-12-30 Институт физики полупроводников АН Украины Infrared semiconductor radiator
RU2174269C2 (en) * 1999-04-07 2001-09-27 Институт электроники Национальной академии наук Беларуси Multifunctional displaying optron
RU2208268C2 (en) * 2000-07-14 2003-07-10 Общество с ограниченной ответственностью "ИКО" Semiconductor infrared radiator

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4406050A (en) * 1982-03-17 1983-09-27 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating lead halide sensitized infrared photodiodes
US4853339A (en) * 1988-07-27 1989-08-01 The United States Of America As Represented By The Secretary Of The Navy Method of sensitizing Pb-salt epitaxial films for schottky diodes
RU2025833C1 (en) * 1991-04-22 1994-12-30 Институт физики полупроводников АН Украины Infrared semiconductor radiator
WO1993007647A1 (en) * 1991-10-01 1993-04-15 Asea Brown Boveri Ab A monolithic optocoupler
RU2174269C2 (en) * 1999-04-07 2001-09-27 Институт электроники Национальной академии наук Беларуси Multifunctional displaying optron
RU2208268C2 (en) * 2000-07-14 2003-07-10 Общество с ограниченной ответственностью "ИКО" Semiconductor infrared radiator

Also Published As

Publication number Publication date
GB2426628B (en) 2008-04-02
GB0617374D0 (en) 2006-10-18
GB2426628A8 (en) 2007-01-11
WO2005076375A1 (en) 2005-08-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20110916