GB2413898A - Buffer structure for modifying a silicon substrate - Google Patents
Buffer structure for modifying a silicon substrate Download PDFInfo
- Publication number
- GB2413898A GB2413898A GB0515760A GB0515760A GB2413898A GB 2413898 A GB2413898 A GB 2413898A GB 0515760 A GB0515760 A GB 0515760A GB 0515760 A GB0515760 A GB 0515760A GB 2413898 A GB2413898 A GB 2413898A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon substrate
- buffer structure
- modifying
- produce
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Abstract
A buffer structure (1) comprising a compositionally graded layer of a nitride alloy (5) comprising two or more Group IIIB elements, for example La, Y, Sc or Ac, is used to modify a silicon substrate (3) to produce a universal substrate on which a range of target materials (7), for example GaN, may be deposited to produce semiconductor devices for electronic and optical applications. The resulting lattice parameter L varies with thickness T through the structure.
Description
GB 2413898 A continuation (74) Agent and/or Address for Service: Kinetic
Limited IP Formalities, A4 Building, Room G016, Cody Technology Park, Ively Road, FARNBOROUGH, Hants, GU14 OLX, United Kingdom
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0303784A GB2398672A (en) | 2003-02-19 | 2003-02-19 | Group IIIA nitride buffer layers |
PCT/GB2004/000560 WO2004075249A2 (en) | 2003-02-19 | 2004-02-16 | Buffer structure for modifying a silicon substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0515760D0 GB0515760D0 (en) | 2005-09-07 |
GB2413898A true GB2413898A (en) | 2005-11-09 |
GB2413898B GB2413898B (en) | 2006-08-16 |
Family
ID=9953280
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0303784A Withdrawn GB2398672A (en) | 2003-02-19 | 2003-02-19 | Group IIIA nitride buffer layers |
GB0515760A Expired - Fee Related GB2413898B (en) | 2003-02-19 | 2004-02-16 | Buffer structure for modifying a silicon substrate |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0303784A Withdrawn GB2398672A (en) | 2003-02-19 | 2003-02-19 | Group IIIA nitride buffer layers |
Country Status (8)
Country | Link |
---|---|
US (1) | US7323764B2 (en) |
EP (1) | EP1595280B8 (en) |
JP (1) | JP4493646B2 (en) |
CN (1) | CN100382244C (en) |
AT (1) | ATE349774T1 (en) |
DE (1) | DE602004003910T2 (en) |
GB (2) | GB2398672A (en) |
WO (1) | WO2004075249A2 (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1883103A3 (en) * | 2006-07-27 | 2008-03-05 | Interuniversitair Microelektronica Centrum | Deposition of group III-nitrides on Ge |
US7494911B2 (en) * | 2006-09-27 | 2009-02-24 | Intel Corporation | Buffer layers for device isolation of devices grown on silicon |
US8106381B2 (en) * | 2006-10-18 | 2012-01-31 | Translucent, Inc. | Semiconductor structures with rare-earths |
US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
US7799600B2 (en) | 2007-05-31 | 2010-09-21 | Chien-Min Sung | Doped diamond LED devices and associated methods |
US8049100B2 (en) * | 2007-07-26 | 2011-11-01 | Translucent, Inc. | Multijunction rare earth solar cell |
US8039737B2 (en) * | 2007-07-26 | 2011-10-18 | Translucent, Inc. | Passive rare earth tandem solar cell |
US8039738B2 (en) * | 2007-07-26 | 2011-10-18 | Translucent, Inc. | Active rare earth tandem solar cell |
AU2008349509B2 (en) * | 2008-01-28 | 2013-12-19 | Amit Goyal | Semiconductor-based large-area flexible electronic devices |
DE102009000514A1 (en) * | 2009-01-30 | 2010-08-26 | Robert Bosch Gmbh | Composite component and method for producing a composite component |
US8878189B2 (en) | 2009-03-27 | 2014-11-04 | Dowa Holdings Co., Ltd. | Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same |
GB2469448A (en) * | 2009-04-14 | 2010-10-20 | Qinetiq Ltd | Strain Control in Semiconductor Devices |
JP5614531B2 (en) | 2010-03-12 | 2014-10-29 | セイコーエプソン株式会社 | Liquid ejecting head, liquid ejecting apparatus using the same, and piezoelectric element |
US9041027B2 (en) | 2010-12-01 | 2015-05-26 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
WO2012074524A1 (en) | 2010-12-01 | 2012-06-07 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
KR101883840B1 (en) * | 2011-08-31 | 2018-08-01 | 엘지이노텍 주식회사 | Light emitting diode |
US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
US8698163B2 (en) | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
US9178114B2 (en) | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
US8853668B2 (en) | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
US20130099357A1 (en) * | 2011-10-21 | 2013-04-25 | Rytis Dargis | Strain compensated reo buffer for iii-n on silicon |
US8394194B1 (en) * | 2012-06-13 | 2013-03-12 | Rytis Dargis | Single crystal reo buffer on amorphous SiOx |
WO2014057748A1 (en) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Group iii nitride composite substrate, manufacturing method therefor, and group iii nitride semiconductor device manufacturing method |
CN103794460B (en) * | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | The coating improved for performance of semiconductor devices |
TWI491068B (en) | 2012-11-08 | 2015-07-01 | Ind Tech Res Inst | Nitride semiconductor structure |
CN105393336B (en) * | 2013-07-22 | 2017-10-31 | 日本碍子株式会社 | Composite base plate, its manufacture method, function element and crystal seed substrate |
EP3465743A1 (en) * | 2016-06-02 | 2019-04-10 | IQE Plc. | Pnictide buffer structures and devices for gan base applications |
KR102098572B1 (en) * | 2018-12-26 | 2020-04-08 | 한국세라믹기술원 | Substrate Material Searching Apparatus and Method for Epitaxy Growth and Record Media Recorded Program for Realizing the Same |
US20240084479A1 (en) * | 2021-01-19 | 2024-03-14 | Alliance For Sustainable Energy, Llc | Dynamic hvpe of compositionally graded buffer layers |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6472694B1 (en) * | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
US20020187356A1 (en) * | 2000-12-14 | 2002-12-12 | Weeks T. Warren | Gallium nitride materials and methods |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50102581A (en) * | 1974-01-16 | 1975-08-13 | ||
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JP3557011B2 (en) * | 1995-03-30 | 2004-08-25 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
JP3813740B2 (en) * | 1997-07-11 | 2006-08-23 | Tdk株式会社 | Substrates for electronic devices |
US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
JP3853942B2 (en) * | 1997-11-12 | 2006-12-06 | 昭和電工株式会社 | Epitaxial wafer |
US6171898B1 (en) * | 1997-12-17 | 2001-01-09 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing |
US5998232A (en) * | 1998-01-16 | 1999-12-07 | Implant Sciences Corporation | Planar technology for producing light-emitting devices |
US6255198B1 (en) * | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
JP2001230447A (en) * | 2000-02-16 | 2001-08-24 | Toyoda Gosei Co Ltd | Manufacture method for iii nitride-based compound semiconductor element |
JP3785059B2 (en) * | 2001-06-25 | 2006-06-14 | 宣彦 澤木 | Manufacturing method of nitride semiconductor |
US6646293B2 (en) * | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
JP2002222803A (en) * | 2001-12-03 | 2002-08-09 | Kyocera Corp | Corrosion resistant member for manufacturing semiconductor |
-
2003
- 2003-02-19 GB GB0303784A patent/GB2398672A/en not_active Withdrawn
-
2004
- 2004-02-16 EP EP04711402A patent/EP1595280B8/en not_active Expired - Lifetime
- 2004-02-16 CN CNB2004800046781A patent/CN100382244C/en not_active Expired - Fee Related
- 2004-02-16 DE DE602004003910T patent/DE602004003910T2/en not_active Expired - Lifetime
- 2004-02-16 JP JP2006502270A patent/JP4493646B2/en not_active Expired - Fee Related
- 2004-02-16 GB GB0515760A patent/GB2413898B/en not_active Expired - Fee Related
- 2004-02-16 WO PCT/GB2004/000560 patent/WO2004075249A2/en active IP Right Grant
- 2004-02-16 US US10/545,911 patent/US7323764B2/en not_active Expired - Lifetime
- 2004-02-16 AT AT04711402T patent/ATE349774T1/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020187356A1 (en) * | 2000-12-14 | 2002-12-12 | Weeks T. Warren | Gallium nitride materials and methods |
US6472694B1 (en) * | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
Also Published As
Publication number | Publication date |
---|---|
WO2004075249A2 (en) | 2004-09-02 |
EP1595280B8 (en) | 2007-02-28 |
CN100382244C (en) | 2008-04-16 |
GB2413898B (en) | 2006-08-16 |
DE602004003910D1 (en) | 2007-02-08 |
JP2006518104A (en) | 2006-08-03 |
GB2398672A (en) | 2004-08-25 |
DE602004003910T2 (en) | 2007-05-16 |
US20060145186A1 (en) | 2006-07-06 |
WO2004075249A3 (en) | 2004-10-28 |
JP4493646B2 (en) | 2010-06-30 |
US7323764B2 (en) | 2008-01-29 |
GB0515760D0 (en) | 2005-09-07 |
CN1751379A (en) | 2006-03-22 |
EP1595280B1 (en) | 2006-12-27 |
GB0303784D0 (en) | 2003-03-26 |
ATE349774T1 (en) | 2007-01-15 |
EP1595280A2 (en) | 2005-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2413898A (en) | Buffer structure for modifying a silicon substrate | |
WO2003034508A1 (en) | Light emitting device and method for manufacture thereof | |
EP1795515A3 (en) | Environment barrier coating for a component and method for fabricating the same | |
EP1562237A3 (en) | Nitride-based semiconductor light emitting device and method of manufacturing the same | |
EP1647611A3 (en) | Thermal barrier coating | |
EP1389814A3 (en) | Semiconductor light-emitting device | |
CA2305203A1 (en) | Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | |
AU2002230868A1 (en) | Gallium nitride materials and methods for forming layers thereof | |
DE502004002785D1 (en) | ANTI-ADHESIVE HIGH-TEMPERATURE LAYERS | |
WO2002101778A3 (en) | Structure and fabrication of light-emitting device having partially coated light-emissive particles | |
WO2003037621A3 (en) | Bonding of a fluoropolymer layer to a substrate | |
EP1930471A3 (en) | Barrier layer, composite article comprising the same, electroactive device, and method | |
EP2282346A3 (en) | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer | |
EP1039551A3 (en) | Photovoltaic module | |
AU2002309954A1 (en) | Semiconductor structures and devices not lattice matched to the substrate | |
BRPI0516973A (en) | substrate and coating composition | |
WO2006033695A3 (en) | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension | |
EP1361616A4 (en) | Compound semiconductor element based on group iii element nitride | |
MY143405A (en) | N-type nitride semiconductor laminate and semiconductor device using same | |
SE0104440D0 (en) | Coating method and coated devices | |
EP1174525A3 (en) | Thin film, method for manufacturing thin film, and electronic component | |
EP1014757A3 (en) | Organic EL device | |
EP1304768A3 (en) | Spring structure | |
EP1947685A3 (en) | Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same | |
WO2006025571A3 (en) | Gan based luminescent device on a metal substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20190216 |