GB2406639A - Improvement in process control for etch processes - Google Patents

Improvement in process control for etch processes Download PDF

Info

Publication number
GB2406639A
GB2406639A GB0423267A GB0423267A GB2406639A GB 2406639 A GB2406639 A GB 2406639A GB 0423267 A GB0423267 A GB 0423267A GB 0423267 A GB0423267 A GB 0423267A GB 2406639 A GB2406639 A GB 2406639A
Authority
GB
United Kingdom
Prior art keywords
improvement
process control
etch processes
examination
monitored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0423267A
Other versions
GB0423267D0 (en
GB2406639B (en
GB2406639A8 (en
Inventor
Michael D Boger
Mark Burton Holbrook
David Heason
David Robert Reeve
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Linde LLC
Original Assignee
BOC Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0209338A external-priority patent/GB0209338D0/en
Priority claimed from GB0214709A external-priority patent/GB0214709D0/en
Application filed by BOC Group Inc filed Critical BOC Group Inc
Publication of GB0423267D0 publication Critical patent/GB0423267D0/en
Publication of GB2406639A publication Critical patent/GB2406639A/en
Application granted granted Critical
Publication of GB2406639B publication Critical patent/GB2406639B/en
Publication of GB2406639A8 publication Critical patent/GB2406639A8/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

A film structure being monitored, such as a silicon wafer undergoing etch, is monitored by examination of the reflection of an incident light beam. The invention is concerned with the situation where a feature of interest, such as an etch groove having a reflective surface (2), is small in relation to the size of the achievable light spot. The detection and processing of the reflected light is based on the detection and examination of evanescent waveforms which are generated at surfaces (10) and (11).

Description

GB 2406639 A continuation (72) Inventor(s): Michael D Badger Mark Burton
Halbrook David Heason David Robert Reeve (74) Agent and/or Address for Service: Murgitroyd & Company Scotland House, 165-169 Scotland Street, GLASGOW, G5 8PL, United Kingdom
GB0423267A 2002-04-23 2003-04-23 Improvement in process control for etch processes Expired - Fee Related GB2406639B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0209338A GB0209338D0 (en) 2002-04-23 2002-04-23 Use of test structures to optimise interferometric endpoint techniques beyond the diffraction limit
GB0214709A GB0214709D0 (en) 2002-06-26 2002-06-26 Improvement in process control for etch processes
PCT/US2003/012462 WO2003092049A1 (en) 2002-04-23 2003-04-23 Improvement in process control for etch processes

Publications (4)

Publication Number Publication Date
GB0423267D0 GB0423267D0 (en) 2004-11-24
GB2406639A true GB2406639A (en) 2005-04-06
GB2406639B GB2406639B (en) 2006-04-05
GB2406639A8 GB2406639A8 (en) 2006-07-03

Family

ID=29271996

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0423267A Expired - Fee Related GB2406639B (en) 2002-04-23 2003-04-23 Improvement in process control for etch processes

Country Status (3)

Country Link
AU (1) AU2003228646A1 (en)
GB (1) GB2406639B (en)
WO (1) WO2003092049A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927785A (en) * 1987-06-04 1990-05-22 U.S. Philips Corporation Method of manufacturing semiconductor devices
US5658418A (en) * 1995-03-31 1997-08-19 International Business Machines Corporation Apparatus for monitoring the dry etching of a dielectric film to a given thickness in an integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927785A (en) * 1987-06-04 1990-05-22 U.S. Philips Corporation Method of manufacturing semiconductor devices
US5658418A (en) * 1995-03-31 1997-08-19 International Business Machines Corporation Apparatus for monitoring the dry etching of a dielectric film to a given thickness in an integrated circuit

Also Published As

Publication number Publication date
GB0423267D0 (en) 2004-11-24
WO2003092049A1 (en) 2003-11-06
AU2003228646A1 (en) 2003-11-10
GB2406639B (en) 2006-04-05
GB2406639A8 (en) 2006-07-03

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Legal Events

Date Code Title Description
711B Application made for correction of error (sect. 117/77)
711G Correction allowed (sect. 117/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20070423