GB2390422A - Avalanche photodiodes for microscopes - Google Patents
Avalanche photodiodes for microscopes Download PDFInfo
- Publication number
- GB2390422A GB2390422A GB0306470A GB0306470A GB2390422A GB 2390422 A GB2390422 A GB 2390422A GB 0306470 A GB0306470 A GB 0306470A GB 0306470 A GB0306470 A GB 0306470A GB 2390422 A GB2390422 A GB 2390422A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wavelength
- microscopes
- optical radiation
- detecting optical
- radiation above
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 abstract 2
- 238000005424 photoluminescence Methods 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Light Receiving Elements (AREA)
Abstract
There is disclosed an improved photoluminescence microscope for detecting optical radiation above a wavelength of 1500nm. Known microscopes, using silicon and germanium single photon avalanche diode detectors, have been limited to detection wavelengths shorter than 1500nm, and therefore have stopped short of the spectral region known as the third telecommunications window, from 1500 to 1500nm, which is the wavelength range within which most long-haul telecommunications devices are designed to operate. The present invention therefore provides a photoluminescence microscope (10) having at least one detector element (14) capable of detecting optical radiation above a wavelength of 1500nm.
Description
GB 2390422 A continuation (74) Agent and/or Address for Service (56) cont
Cruikshank & Fairweather CRYSTAL GROWTH, NORTH HOLLAND PUBLISHING 19 Royal Exchange Square, GLASGOW, CO. AMSTERDAM, NL, VOL. 183, NO. 1-2,1983, G1 3AE, United Kingdom PAGES 269-Z73 DRIES ET AL: " A 2.0 M UM CUTOFF WAVELENGTH
SEPERATE ABSORPTION, CHARGE AN D M U LTILAYER
AVALANCHE PHOTODIODE USING STRAIN
COMPENSATED INAAS QUANTUMM WELLS"
APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE
OF PHYSICS. NEW YORK, US VOL.74, NO. 18 3 MAY,
1999, PAGES 2581-2583
(58) Field of Search by ISA
I NT CL7 G01 N. G02B, H01 L
Other: EPO-INTERNAL, INSPEC, COMPENDEX, WPI DATA, PAJ
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0022434.5A GB0022434D0 (en) | 2000-09-13 | 2000-09-13 | Microscope |
PCT/GB2001/004121 WO2002023166A1 (en) | 2000-09-13 | 2001-09-13 | Avalanche photodiodes for microscopes |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0306470D0 GB0306470D0 (en) | 2003-04-23 |
GB2390422A true GB2390422A (en) | 2004-01-07 |
Family
ID=9899365
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0022434.5A Ceased GB0022434D0 (en) | 2000-09-13 | 2000-09-13 | Microscope |
GB0306470A Withdrawn GB2390422A (en) | 2000-09-13 | 2001-09-13 | Avalanche photodiodes for microscopes |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0022434.5A Ceased GB0022434D0 (en) | 2000-09-13 | 2000-09-13 | Microscope |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001286112A1 (en) |
GB (2) | GB0022434D0 (en) |
WO (1) | WO2002023166A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2419716B1 (en) | 2009-04-15 | 2012-08-22 | Koninklijke Philips Electronics N.V. | Device for time controlled fluorescence detection |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0266881A2 (en) * | 1986-09-30 | 1988-05-11 | Astromed Limited | Method and apparatus for multiple optical assaying |
-
2000
- 2000-09-13 GB GBGB0022434.5A patent/GB0022434D0/en not_active Ceased
-
2001
- 2001-09-13 WO PCT/GB2001/004121 patent/WO2002023166A1/en active Application Filing
- 2001-09-13 AU AU2001286112A patent/AU2001286112A1/en not_active Abandoned
- 2001-09-13 GB GB0306470A patent/GB2390422A/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0266881A2 (en) * | 1986-09-30 | 1988-05-11 | Astromed Limited | Method and apparatus for multiple optical assaying |
Non-Patent Citations (4)
Title |
---|
DRIES ET AL: " A 2.0 MUM CUTOFF WAVELENGTH SEPERATE ABSORPTION, CHARGE AND MULTILAYER AVALANCHE PHOTODIODE USING STRAIN COMPENSATED INAAS QUANTUMM WELLS" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US VOL.74, NO. 18 3 MAY, 1999, PAGES 2581-2583 * |
DRIES ET AL: "EXTENDED WAVELENGTH INGAS DETECTORS-RECENT PROGRESS IN NEW MATERIALS FOR BANDGAP WAVELENGTH /SPL LAMBDA/G<1.65 /SPL MU/M" LEOS'99 IEEE LASERS ANDELECTRO-OPTICS SOCIETY 1999 12TH ANNUAL MEETING SAN FRANSISCO, CA, USA 8-11 NOV.1999 PAGES 740-741 * |
FANCEY SJ ET AL: "TIME RESOLVED PHOTOLUMINESCENCE STUDY OF STRAINED-LAYER INGASASP/INP HETROSTRUCTURES" JOURNAL OF CRYSTAL GROWTH, NORTH HOLLAND PUBLISHING CO. AMSTERDAM, NL, VOL. 183, NO. 1-2, 1983, PAGES 269-273 * |
HISKETT ET AL: "HIGH EFFICIENCY DETECTION OF SINGLE PHOTONS AT PICOSECOND RESOLTION FOR USE AT TELECOMMUNICATIONS WAVELENGTHS" QUANTUM ELECTRONICS CONFERENCE 1998, PAGES 169-169 * |
Also Published As
Publication number | Publication date |
---|---|
AU2001286112A1 (en) | 2002-03-26 |
WO2002023166A1 (en) | 2002-03-21 |
GB0022434D0 (en) | 2000-11-01 |
GB0306470D0 (en) | 2003-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |