GB2390422A - Avalanche photodiodes for microscopes - Google Patents

Avalanche photodiodes for microscopes Download PDF

Info

Publication number
GB2390422A
GB2390422A GB0306470A GB0306470A GB2390422A GB 2390422 A GB2390422 A GB 2390422A GB 0306470 A GB0306470 A GB 0306470A GB 0306470 A GB0306470 A GB 0306470A GB 2390422 A GB2390422 A GB 2390422A
Authority
GB
United Kingdom
Prior art keywords
wavelength
microscopes
optical radiation
detecting optical
radiation above
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0306470A
Other versions
GB0306470D0 (en
Inventor
Smith M Jason
Gerald S Buller
Ivair Gontijo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heriot Watt University
Original Assignee
Heriot Watt University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heriot Watt University filed Critical Heriot Watt University
Publication of GB0306470D0 publication Critical patent/GB0306470D0/en
Publication of GB2390422A publication Critical patent/GB2390422A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Light Receiving Elements (AREA)

Abstract

There is disclosed an improved photoluminescence microscope for detecting optical radiation above a wavelength of 1500nm. Known microscopes, using silicon and germanium single photon avalanche diode detectors, have been limited to detection wavelengths shorter than 1500nm, and therefore have stopped short of the spectral region known as the third telecommunications window, from 1500 to 1500nm, which is the wavelength range within which most long-haul telecommunications devices are designed to operate. The present invention therefore provides a photoluminescence microscope (10) having at least one detector element (14) capable of detecting optical radiation above a wavelength of 1500nm.

Description

GB 2390422 A continuation (74) Agent and/or Address for Service (56) cont
Cruikshank & Fairweather CRYSTAL GROWTH, NORTH HOLLAND PUBLISHING 19 Royal Exchange Square, GLASGOW, CO. AMSTERDAM, NL, VOL. 183, NO. 1-2,1983, G1 3AE, United Kingdom PAGES 269-Z73 DRIES ET AL: " A 2.0 M UM CUTOFF WAVELENGTH
SEPERATE ABSORPTION, CHARGE AN D M U LTILAYER
AVALANCHE PHOTODIODE USING STRAIN
COMPENSATED INAAS QUANTUMM WELLS"
APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE
OF PHYSICS. NEW YORK, US VOL.74, NO. 18 3 MAY,
1999, PAGES 2581-2583
(58) Field of Search by ISA
I NT CL7 G01 N. G02B, H01 L
Other: EPO-INTERNAL, INSPEC, COMPENDEX, WPI DATA, PAJ
GB0306470A 2000-09-13 2001-09-13 Avalanche photodiodes for microscopes Withdrawn GB2390422A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0022434.5A GB0022434D0 (en) 2000-09-13 2000-09-13 Microscope
PCT/GB2001/004121 WO2002023166A1 (en) 2000-09-13 2001-09-13 Avalanche photodiodes for microscopes

Publications (2)

Publication Number Publication Date
GB0306470D0 GB0306470D0 (en) 2003-04-23
GB2390422A true GB2390422A (en) 2004-01-07

Family

ID=9899365

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0022434.5A Ceased GB0022434D0 (en) 2000-09-13 2000-09-13 Microscope
GB0306470A Withdrawn GB2390422A (en) 2000-09-13 2001-09-13 Avalanche photodiodes for microscopes

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB0022434.5A Ceased GB0022434D0 (en) 2000-09-13 2000-09-13 Microscope

Country Status (3)

Country Link
AU (1) AU2001286112A1 (en)
GB (2) GB0022434D0 (en)
WO (1) WO2002023166A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2525706C2 (en) 2009-04-15 2014-08-20 Конинклейке Филипс Электроникс Н.В. Device for time-controlled fluorescence determination

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0266881A2 (en) * 1986-09-30 1988-05-11 Astromed Limited Method and apparatus for multiple optical assaying

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0266881A2 (en) * 1986-09-30 1988-05-11 Astromed Limited Method and apparatus for multiple optical assaying

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
DRIES ET AL: " A 2.0 MUM CUTOFF WAVELENGTH SEPERATE ABSORPTION, CHARGE AND MULTILAYER AVALANCHE PHOTODIODE USING STRAIN COMPENSATED INAAS QUANTUMM WELLS" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US VOL.74, NO. 18 3 MAY, 1999, PAGES 2581-2583 *
DRIES ET AL: "EXTENDED WAVELENGTH INGAS DETECTORS-RECENT PROGRESS IN NEW MATERIALS FOR BANDGAP WAVELENGTH /SPL LAMBDA/G<1.65 /SPL MU/M" LEOS'99 IEEE LASERS ANDELECTRO-OPTICS SOCIETY 1999 12TH ANNUAL MEETING SAN FRANSISCO, CA, USA 8-11 NOV.1999 PAGES 740-741 *
FANCEY SJ ET AL: "TIME RESOLVED PHOTOLUMINESCENCE STUDY OF STRAINED-LAYER INGASASP/INP HETROSTRUCTURES" JOURNAL OF CRYSTAL GROWTH, NORTH HOLLAND PUBLISHING CO. AMSTERDAM, NL, VOL. 183, NO. 1-2, 1983, PAGES 269-273 *
HISKETT ET AL: "HIGH EFFICIENCY DETECTION OF SINGLE PHOTONS AT PICOSECOND RESOLTION FOR USE AT TELECOMMUNICATIONS WAVELENGTHS" QUANTUM ELECTRONICS CONFERENCE 1998, PAGES 169-169 *

Also Published As

Publication number Publication date
GB0306470D0 (en) 2003-04-23
GB0022434D0 (en) 2000-11-01
AU2001286112A1 (en) 2002-03-26
WO2002023166A1 (en) 2002-03-21

Similar Documents

Publication Publication Date Title
Shi et al. Comparative study of silicon-based ultraviolet photodetectors
CN1806343A (en) Steady-state-non-equilibrium distribution of free carriers and photon energy up-conversion using same
Shuvalov et al. Triplet states of monomeric bacteriochlorophyll in vitro and of bacteriochlorophyll dimers in antenna and reaction center complexes
Izhnin et al. Single-photon avalanche diode detectors based on group IV materials
Ferguson et al. The assignment of the luminescent states of Ru (bpy) 2+ 3. MCPL and time-resolved luminescence at 2.0 K
GB2390422A (en) Avalanche photodiodes for microscopes
CN101241241B (en) Raman optical amplification atom filtering method and apparatus
Gong et al. Germanium–tin (Ge1–x Sn x) photodetectors for 2 μm wavelength band
US5828118A (en) System which uses porous silicon for down converting electromagnetic energy to an energy level within the bandpass of an electromagnetic energy detector
Bertone et al. Overview of photon counting detectors based on cmos processed single photon avalanche diodes (spad), ingaas apds, and novel hybrid (tube+ apd) detectors
Jackson et al. Improvements in silicon photon counting modules
Sagar et al. Radial distribution of the integrated light and photometric colours in open star clusters
Chelly et al. Pyramid-shaped silicon photodetector with subwavelength aperture [for NSOM]
Chou et al. Novel Photodetectors Based on SOI and Two-dimensional Materials
Mueller et al. Free-Space Coupled Low False Count Superconducting Nanowire Single-Photon Detector
WO2001067144A3 (en) Integrated optical transceiver and related methods
Hitlin et al. Radiation Hardness Studies of CsI crystals
Peng et al. The effect of antireflection coating on the characteristics of wideband silicon avalanche photodetectors
Hardalov et al. New experimental approach to the excess carrier transfer in semi‐insulating GaAs based on time‐resolved photovoltage
Nemecek et al. Fast and efficient integrated silicon PIN-finger photodetector from ultraviolet up to near infrared
Lombardi et al. Advances in quantum metrology with dielectrically structured single photon sources based on molecules
JPS5657368A (en) Solid-state image pickup device
TW373341B (en) Separate absorption and multiplication avalanche photodiode
SU1221507A1 (en) Method of measuring luminous radiation and arrangement for accomplishment of same
AU648682B2 (en) Multiple-beam quantum noise-correlated lightwave system

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)