GB2384634B - Method of reducing voltage stress of a transistor - Google Patents

Method of reducing voltage stress of a transistor

Info

Publication number
GB2384634B
GB2384634B GB0310888A GB0310888A GB2384634B GB 2384634 B GB2384634 B GB 2384634B GB 0310888 A GB0310888 A GB 0310888A GB 0310888 A GB0310888 A GB 0310888A GB 2384634 B GB2384634 B GB 2384634B
Authority
GB
United Kingdom
Prior art keywords
transistor
voltage stress
reducing voltage
reducing
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0310888A
Other versions
GB2384634A (en
GB0310888D0 (en
Inventor
Michael J Allen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/096,283 external-priority patent/US6351358B1/en
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB0310888D0 publication Critical patent/GB0310888D0/en
Publication of GB2384634A publication Critical patent/GB2384634A/en
Application granted granted Critical
Publication of GB2384634B publication Critical patent/GB2384634B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB0310888A 1998-06-11 1999-05-03 Method of reducing voltage stress of a transistor Expired - Fee Related GB2384634B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/096,283 US6351358B1 (en) 1998-06-11 1998-06-11 Stress-follower circuit configuration
GB0029868A GB2355121B (en) 1998-06-11 1999-05-03 A stress-follower circuit configuration

Publications (3)

Publication Number Publication Date
GB0310888D0 GB0310888D0 (en) 2003-06-18
GB2384634A GB2384634A (en) 2003-07-30
GB2384634B true GB2384634B (en) 2003-10-29

Family

ID=26245402

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0310888A Expired - Fee Related GB2384634B (en) 1998-06-11 1999-05-03 Method of reducing voltage stress of a transistor

Country Status (1)

Country Link
GB (1) GB2384634B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2313968A (en) * 1996-05-28 1997-12-10 Altera Corp An IC with I/O configurable for coupling to different operating voltage environments
US5748025A (en) * 1996-03-29 1998-05-05 Intel Corporation Method and apparatus for providing high voltage with a low voltage CMOS integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748025A (en) * 1996-03-29 1998-05-05 Intel Corporation Method and apparatus for providing high voltage with a low voltage CMOS integrated circuit
GB2313968A (en) * 1996-05-28 1997-12-10 Altera Corp An IC with I/O configurable for coupling to different operating voltage environments

Also Published As

Publication number Publication date
GB2384634A (en) 2003-07-30
GB0310888D0 (en) 2003-06-18

Similar Documents

Publication Publication Date Title
GB9804419D0 (en) Thin-film transistor and method of making same
GB2322968B (en) Thin-film transistor and method of making same
SG50863A1 (en) A method of manufacturing an insulated gate field effect transistor
GB2388138B (en) Assembly for and method of performing a well operation
SG83108A1 (en) Field effect transistor and method of its manufacture
SG82585A1 (en) Sub-quarter-micron mosfet and method of its manufacturing
ZA971709B (en) Method of increasing testosterone
GB2313476B (en) Method of manufacturing a mosfet
GB9929614D0 (en) Method of manufacturing a transistor
HK1056268A1 (en) Method of reducing voltage stress of a transistor
GB2296381B (en) Method of manufacturing a MIS type field effect transistor
AU1230100A (en) A method of treating endometriosis
EP0997450A4 (en) METHOD OF REDUCING NO x
EP1113808A4 (en) A method of treatment and agents useful for same
AUPP670698A0 (en) A method of regulation
HK1043247A1 (en) Superconducting transistor arrangement and a method relating thereto
GB2287125B (en) High voltage transistors
EP0976380A4 (en) Method of recalcifying teeth
EP1127152A4 (en) A method of recombination and agents useful for same
EP0995213A4 (en) Gate electrode formation method
GB2384634B (en) Method of reducing voltage stress of a transistor
GB9917526D0 (en) Method for reducing drift behaviour
PL310540A1 (en) Method of obtaining sulphur
GB9925658D0 (en) A method of reducing delays
PL322543A1 (en) Method of obtaining dexphenyl fluramine hydrochloride

Legal Events

Date Code Title Description
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1056268

Country of ref document: HK

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130503