GB2384634B - Method of reducing voltage stress of a transistor - Google Patents
Method of reducing voltage stress of a transistorInfo
- Publication number
- GB2384634B GB2384634B GB0310888A GB0310888A GB2384634B GB 2384634 B GB2384634 B GB 2384634B GB 0310888 A GB0310888 A GB 0310888A GB 0310888 A GB0310888 A GB 0310888A GB 2384634 B GB2384634 B GB 2384634B
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- voltage stress
- reducing voltage
- reducing
- stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/096,283 US6351358B1 (en) | 1998-06-11 | 1998-06-11 | Stress-follower circuit configuration |
GB0029868A GB2355121B (en) | 1998-06-11 | 1999-05-03 | A stress-follower circuit configuration |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0310888D0 GB0310888D0 (en) | 2003-06-18 |
GB2384634A GB2384634A (en) | 2003-07-30 |
GB2384634B true GB2384634B (en) | 2003-10-29 |
Family
ID=26245402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0310888A Expired - Fee Related GB2384634B (en) | 1998-06-11 | 1999-05-03 | Method of reducing voltage stress of a transistor |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2384634B (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2313968A (en) * | 1996-05-28 | 1997-12-10 | Altera Corp | An IC with I/O configurable for coupling to different operating voltage environments |
US5748025A (en) * | 1996-03-29 | 1998-05-05 | Intel Corporation | Method and apparatus for providing high voltage with a low voltage CMOS integrated circuit |
-
1999
- 1999-05-03 GB GB0310888A patent/GB2384634B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5748025A (en) * | 1996-03-29 | 1998-05-05 | Intel Corporation | Method and apparatus for providing high voltage with a low voltage CMOS integrated circuit |
GB2313968A (en) * | 1996-05-28 | 1997-12-10 | Altera Corp | An IC with I/O configurable for coupling to different operating voltage environments |
Also Published As
Publication number | Publication date |
---|---|
GB2384634A (en) | 2003-07-30 |
GB0310888D0 (en) | 2003-06-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1056268 Country of ref document: HK |
|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20130503 |