GB2359416B - Etching unit for hf vapour etching - Google Patents

Etching unit for hf vapour etching

Info

Publication number
GB2359416B
GB2359416B GB0021935A GB0021935A GB2359416B GB 2359416 B GB2359416 B GB 2359416B GB 0021935 A GB0021935 A GB 0021935A GB 0021935 A GB0021935 A GB 0021935A GB 2359416 B GB2359416 B GB 2359416B
Authority
GB
United Kingdom
Prior art keywords
etching
vapour
unit
etching unit
vapour etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0021935A
Other versions
GB2359416A (en
GB0021935D0 (en
Inventor
Franz Laermer
Andrea Schilp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of GB0021935D0 publication Critical patent/GB0021935D0/en
Publication of GB2359416A publication Critical patent/GB2359416A/en
Application granted granted Critical
Publication of GB2359416B publication Critical patent/GB2359416B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
GB0021935A 1999-09-07 2000-09-06 Etching unit for hf vapour etching Expired - Fee Related GB2359416B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE29915696U DE29915696U1 (en) 1999-09-07 1999-09-07 Etching system for HF steam etching

Publications (3)

Publication Number Publication Date
GB0021935D0 GB0021935D0 (en) 2000-10-25
GB2359416A GB2359416A (en) 2001-08-22
GB2359416B true GB2359416B (en) 2002-06-26

Family

ID=8078556

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0021935A Expired - Fee Related GB2359416B (en) 1999-09-07 2000-09-06 Etching unit for hf vapour etching

Country Status (2)

Country Link
DE (1) DE29915696U1 (en)
GB (1) GB2359416B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10336328B4 (en) * 2003-08-07 2013-04-25 Robert Bosch Gmbh Device for processing a silicon substrate
US20130089944A1 (en) * 2010-06-11 2013-04-11 Amtech Systems, Inc. Solar cell silicon wafer process
CN109065665B (en) * 2018-06-28 2020-05-22 华南理工大学 Micro-etching method of cadmium telluride nano-crystalline film
KR20200022682A (en) * 2018-08-23 2020-03-04 세메스 주식회사 Buffer unit, Apparatus and Method for treating substrate with the unit

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264945A2 (en) * 1986-10-24 1988-04-27 General Signal Corporation Multichamber plasma etching system
JPH02183527A (en) * 1989-01-10 1990-07-18 Hikari Gijutsu Kenkyu Kaihatsu Kk Semiconductor etching method and machining device for semiconductor
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
EP0408216A2 (en) * 1989-07-11 1991-01-16 Hitachi, Ltd. Method for processing wafers and producing semiconductor devices and apparatus for producing the same
WO1995018459A1 (en) * 1993-12-23 1995-07-06 Heikki Ihantola Apparatus and method for processing of semiconductors, such as silicon chips
US5478780A (en) * 1990-03-30 1995-12-26 Siemens Aktiengesellschaft Method and apparatus for producing conductive layers or structures for VLSI circuits
US5552017A (en) * 1995-11-27 1996-09-03 Taiwan Semiconductor Manufacturing Company Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow
WO1998043285A1 (en) * 1997-03-26 1998-10-01 Fsi International, Inc. Direct vapor delivery of enabling chemical for enhanced hf etch process performance

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264945A2 (en) * 1986-10-24 1988-04-27 General Signal Corporation Multichamber plasma etching system
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPH02183527A (en) * 1989-01-10 1990-07-18 Hikari Gijutsu Kenkyu Kaihatsu Kk Semiconductor etching method and machining device for semiconductor
EP0408216A2 (en) * 1989-07-11 1991-01-16 Hitachi, Ltd. Method for processing wafers and producing semiconductor devices and apparatus for producing the same
US5478780A (en) * 1990-03-30 1995-12-26 Siemens Aktiengesellschaft Method and apparatus for producing conductive layers or structures for VLSI circuits
WO1995018459A1 (en) * 1993-12-23 1995-07-06 Heikki Ihantola Apparatus and method for processing of semiconductors, such as silicon chips
US5552017A (en) * 1995-11-27 1996-09-03 Taiwan Semiconductor Manufacturing Company Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow
WO1998043285A1 (en) * 1997-03-26 1998-10-01 Fsi International, Inc. Direct vapor delivery of enabling chemical for enhanced hf etch process performance

Also Published As

Publication number Publication date
DE29915696U1 (en) 2001-01-18
GB2359416A (en) 2001-08-22
GB0021935D0 (en) 2000-10-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160906