GB2359190A - Light emitting devices with riddled barriers for electrons and holes - Google Patents
Light emitting devices with riddled barriers for electrons and holes Download PDFInfo
- Publication number
- GB2359190A GB2359190A GB0003367A GB0003367A GB2359190A GB 2359190 A GB2359190 A GB 2359190A GB 0003367 A GB0003367 A GB 0003367A GB 0003367 A GB0003367 A GB 0003367A GB 2359190 A GB2359190 A GB 2359190A
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- Prior art keywords
- riddled
- electrons
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- channels
- semiconductor
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- 230000004888 barrier function Effects 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 229910002601 GaN Inorganic materials 0.000 claims description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 20
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 238000005253 cladding Methods 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 9
- 101000767534 Arabidopsis thaliana Chorismate mutase 2 Proteins 0.000 claims description 8
- 101000986989 Naja kaouthia Acidic phospholipase A2 CM-II Proteins 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001199 N alloy Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 230000006798 recombination Effects 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- 239000000969 carrier Substances 0.000 description 5
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Light emitting diodes and laser diodes based on III-V and II-VI semiconductors comprising riddled barrier layers are disclosed. The riddled barrier 3 is a barrier layer provided with channels 50-500Ñ in diameter at a density of 10<SP>9</SP>-10<SP>11</SP> per square cm. The channels may be vertical paths or may be threaded dislocations. The riddles barrier layers may be GaAlN with GaInN channels, GaInP with AlInP channels or GaAlN with threaded dislocations. The barrier layers may be provided for electrons or holes or both.
Description
Ap 2359190 LIGHT EMITTING DEVICES WITH RIDDLED BARRIERS FOR ELECTRONS AND
HOLES
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to light emitting diodes (LEDs) and laser diodes (LDs) producing visible, infrared or ultraviolet light.
2. Description of the Prior Art
Light emitting semiconductor diodes have been marketed for many years. For light generation in LEDs, the radiative recombination of electrons and holes in an active layer is used. The active layer, where radiative recombination of electrons and holes occurs, can be a p-n Junction, a heterojunction, a single quantum well or multiple quantum wells. In more effective LEDs, a single quantum well or multiple quantum wells is or are used as the active layer. For fabrication of a highly efficient device, the number of carriers recombined radiatively inside the active layer should be maximized and the number of carriers recombined non-radiatively should be minimized.
As prior art there may be mentioned US-A- 5 588 015, EP-A-0 549 853 and EP-A-0 254 568.
Usually, LEDs and LDs operate at approximately homogeneous electron and hole current densities. The present invention deals with LED and LD structures based on a system of - and p-type layers separated by a riddled barrier in which electron and hole current densities are highly inhomogeneous.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide highly efficient LEDs and LDs. This invention provides LED and LD structures with riddled barriers for electrons and holes.
According to the present invention from one aspect, there is provided a light emitting diode with riddled barriers for electrons and holes comprising:
a system of - and p-type host semiconductor layers, separated by a riddled barrier, the n- ddled barrier being made of a semiconductor or dielectric material with a band gap higher than the band gap of the host semiconductor; and channels in the riddled barrier filled with a semiconductor with a band gap lower than the band gap of the host semiconductor.
According to the present invention from another aspect, there is provided a GaN based LED structure with GaA 1 N/GaInN riddled barriers for electrons and holes comprising:
a sapphire (A' 203) substrate; a gallium nitride (GaN) buffer layer of 200 A thickness; an n-cladding and contact layer made of 3-4 im thick n-GaN doped by silicon (S1) 1 CM-3.
with a doping level of 5x 1 V - 5xl W' a riddled barrier with a thickness of 50A made of a GaA IN alloy semiconductor with channels having density of W-10 em-' and a diameter of 50-500A filled with a GaInN alloy semiconductor; a p-type GaN layer with thickness of 0.5 im doped with magnesium (Mg) at concentration -1018 ern-3; a transparent metallic alloy p-type contact; and an n-type contact deposited on the n-cladding and contact layer after etching.
According to the present invention from another aspect, there is provided an LED structure with Ga,,.51no.,P/AIO.51no.5p riddled barriers for electrons and holes comprising:
an n-type GaAs substrate with a width of 100-300,, and an attached metallic contact; an n-cladding layer made of 0.5 pm thick n-type AI xGayInj-(,Y)P, where 0:5, x: 0.25 and 0 y: 0.25, with a doping level -10' cm-3; a riddled barrier with a thickness of 50A made of A10,51n03P alloy semiconductor with channels having a density of 1 o'- 1011 CM-2 and a diameter of 50-500A filledwith Gao-5 Ino 5P a] Icy semiconductor; a p-type layer with thickness of 0.5 pm made of p-type AI,Gaylnl-(x+Y)P, where 0 5 x: 0.25 and 0 y: 0.25, with a doping level -1V cm-'; and a transparent metallic alloy contact.
According to the present invention from another aspect, there is provided a GaN based LED structure with Ga,gA'0,2N riddled barriers with threading dislocations forming channels for electrons and holes comprising:
a sapphire (AI 203) substrate; a gallium nitride (GaN) buffer layer of 200 'A thickness; an n-cladding and contact layer made of 3-4pm thick n-GaN doped by silicon (Si) with a doping level -10' CM-3; a riddled barrier for electrons with a thickness of I OA made of GaAl,,,N alloy semiconductor, where 0.6 x 0.85, with threading dislocations forming channels for electrons and having density of 109-10 CM-2; an active layer with thickness 50A made of Ga,,In,,N alloy, where 0.6 < x:s; 0.85; a riddled barrier for holes with a thickness of lOA made of Ga,'Al,_,,N alloy semiconductor, where 0.6 x 0.85, with threading dislocations forming channels for holes and having a density of 109 - 1V em-'; a 0.5 1.im thick p-type layer made of GaN doped with magnesium (Mg) at a concentration -10 18 CM-3 a transparent metallic alloy p-type contact; and an n-type contact deposited on the ncladding and contact layer after etchin g- According to the present invention from another aspect, there is provided a light emitting diode or a laser diode with direct injection of electrons and holes into active quantum dots through channels in riddled barriers.
A typical structure consists of a system of - and p-type layers, 2 and 5, separated by a riddled barrier 3, and contacts 1, 6 see Fig. 1.
The riddled barrier 3 is made of a semiconductor or dielectric material with a band gap higher than the band gap of the host semiconductor. The channels 4 in the riddled barrier are filled with a semiconductor with a band gap lower than the band gap of the host semiconductor. The current density in the channels 4 is higher than the average current density. For this reason, the quantum efficiency of radiative recombination of carriers in the active channels 4, which is proportional to square of the current density, is higher by factor -0+SI3/SA) as compared to a usual active layer with uniform carrier density, where S13andSAare the areas of barriers 3 and active channels 4 respectively.
Advantages This design allows:
an increase in the non-equilibrium carrier concentration and the quantum efficiency of their radiative recombination in the active area of a LED or LD.
a reduction of the threshold of the laser generation in a LD.
the achievement of higher efficiency of an LED at low currents.
the achievement of higher current densities and higher efficiency at the same current and the same heating conditions.
BRIEF DESCRIPTION OF THE DRAWINGS
In the accompanying drawings:
Fig. 1 is the general structure of an LED or LD with riddled barriers for electrons and holes., Fig. 2 is a GaN based LED structure with GaAIN/GaInN riddled barriers for electrons and holes (Example 1); Fig. 3 is an LED structure with G%.51no.5p/Alo.5Ino.5p riddled barriers for electrons and 25 holes (Example 2); and Fig. 4 is a GaN based LED structure with Gao.8A10.2N riddled barriers with threading dislocations forming channels for electrons and holes (Example 3).
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The invention will be more fully understood by reference to the following examples:
Example 1
Fig. 2 shows a GaN based LED structure with GaAIN/GaInN riddled barriers for electrons and holes. 11 has a sapphire (A1203) substrate 7 upon which a gallium nitride (GaN) buffer layer 8 of 200 A thickness is formed. Then, an n-cladding and contact layer 2 is deposited which is made of 3-4 1,im thick n-GaN doped by silicon (S1) with a doping level 5x10" - 1V' em^'. Then, the riddled barrier 3 with a thickness of 50A rnade of a GaAlN alloy semiconductor with channels 4 having a density of 109-10"cm-' and a diameter of 50-500A filled with a GaInN alloy semiconductor is deposited.
Then, a 0.5 im thick p-type layer 5 is made of GaN doped with magnesium (Mg) at a concentration of 10 em-'. On the p-type layer a transparent metallic alloy contact 7 is deposited. The contact 1 is deposited on ncladding and contact layer 2 after etching.
The current density in the channels 4 is higher than the average current density. For this reason, the quantum efficiency of radiative recombination of carriers in the active channels 4, which is proportional to square of the current density, is higher by factor (1 +S,,/SA) = 10100 as compared to a usual active layer with a uniform carrier density, where Si, and SA are the areas of barriers 3 and active channels 4 respectively.
Example2
F1,0. 3 shows an LED structure with Ga,.51n,.,P/AI,.,1n,,.,P riddled barriers for electrons and holes. It has an n-type GaAs substrate 7 with a width of 100-300 im and an attached metallic contact 1. Upon the substrate, the n-cladding layer 2 is deposited which is made of 0.5 pm thick ii-type A10-25Ga0251n0.5p with a doping leVel Of 1019 CM-3.
Then, the riddled barrier 3 with a thickness of 50A made of A10.51no.5P alloy semiconductor with channels 4 having a density of WAV CM-2 and a diameter of 50- 500A filled with Gk.,In..,P alloy semiconductor is deposited. Then, 0.5pm thick p-type layer 5 is made of p-type AIO.25GaO.25'r)0.5pwlth a doping level of_1018 CM-3. On the p30 type layer 5, a transparent metallic alloy contact 6 is deposited.
The current density in the channels 4 is higher than the average current density. For this reason, the quantum efficiency of radiative recombination of carriers in the active channels 4, which is proportional to square of the current density, is higher by a factor - (1 +SB/SA) = 10 - 100 as compared to a usual active layer with a uniform carrier density, where SI, and SA are the areas of barriers 3 and active channels 4 respectively.
Example 3
Fig. 4 shows a GaN based LED structure with Gao.,AlUN riddled barriers with threading dislocations forming channels for electrons and holes. It has a sapphire (A1203) substrate 7 upon which a gallium nitride (GaN) buffer layer 8 of 200 A thickness is formed. Then, n-cladding and contact layer 2 is deposited which is made of 3-4 im thick n-GaN doped by silicon (Si) with a doping level Of 1011 CM-3. Then, the riddled barrier 9 for electrons with a thickness of 1 OA made of Gag_8A10.2N alloy semiconductor with threading dislocations 4 forming channels for electrons and having density of 109 1011 CM-2 is deposited.
Then, an active layer 3 with a thickness of 50A made of Ga..,In,,2N alloy is deposited.
Then, the riddled barrier 10 for holes with a thickness of IOA made of Gao.sAI0.2N alloy semiconductor with threading dislocations 4 forming channels for holes and having a density of 109-1V CM-2 is deposited.
Then, 0.5 im thick p-type layer 5 is made of GaN doped with magnesium (Mg) at a concentration of 10'8 cm-'. On the p-type layer, a transparent metallic alloy contact 7 is deposited. Then, second n-type contact 1 is deposited on n-cladding and contact layer 2 after etching.
The recombination of electrons and holes occurs in quantum dots formed by crossing of threading dislocation lines 4 and active quantum well 3.
The current density in the channels formed by threading dislocations 4 is higher than the average current density. For this reason, the quantum efficiency which Is proportional a to square of the current density, is higher as compared to usual active layer with uniform carrier density.
Claims (5)
1. A light emitting diode with riddled barriers for electrons and holes comprising:
a system of - and p-type host semiconductor layers, separated by a riddled barrier, the riddled barrier being made of a semiconductor or dielectric material with a band gap higher than the band gap of the host semiconductor- and channels in the riddled barrier filled with a semiconductor with a band gap lower than the band gap of the host semiconductor.
2.
A GaN based LED structure with GaA I N/GaInN riddled barriers for electrons and holes comprising:
a sapphire (A' 203) substrate; a gallium nitride (GaN) buffer layer of 200 A thickness; an n-cladding and contact layer made of 3-4 im thick n-GaN doped by silicon (Si) with a doping level of 5xIC- 5x10'9 CM-3.
ariddled barrierwith athickness of 50A made of a GaAlN alloy semiconductor with channels having density of 109-1011 CM-2 and a diameter of 50-500A filled with a GaInN alloy semiconductor; a p-type GaN layer with thickness of 0.5 im doped with magnesium (Mg) at concentration _1018 CM-3 a transparent metallic alloy p-type contact; and an n-type contact deposited on the n-cladding and contact layer after etching.
3. An LED structure with Gao.51no.5P/A10..,InO.5p riddled barriers for electrons and holes comprising:
an n-type GaAs substrate with a width of 100-300 Min and an attached metallic contact; ann-cladding layermade of 0.5 1,im thick n-typeAI,,Gayln,-(,,-Y)P, where 0: x: 0.25 and 0: y 0.25, with a doping level -1 C em-'; a riddled barrier with a thickness of 50A made of A10.5M0.5P alloy semiconductor with channels having a density of 109- 10 " CM-2 and a diameter of 50- 500A filledwith Gao.5M0.5P alloy semiconductor; p-type layer with thickness of 0.5 pm made of p-type AI GayIn,-(,.,Y)P, where 0 < 0.25 and 0: y 0.25, with a doping leVel _ 10 18 CM-3; and n a transparent metallic alloy contact.
4. A GaN based LED structure with Ga,0.8A10.2N riddled barriers with threading dislocations fonning channels for electrons and holes comprising:
a sapphire (A1203) substrate; a gallium nitride (GaN) buffer layer of 200 A thickness; an ncladding and contact layer made of 3-4 im thick n-GaN doped by silicon (S1) with a doping level - 1 C em-'; a riddled barrier for electrons with a thickness of 1 OA made of Ga,,Al -, ,N alloy semiconductor, where 0.6 < x: 0.85, with threading dislocations forming channels 2.
for electrons and having density of 10'- 10 " em- 3 an active layer with thickness 50A made of GkIn,_.N alloy, where 0.6 x 0. 85; a riddled barrier for holes with a thickness of lOA made of GaAl,_',N alloy semiconductor, where 0.6 < x m 0.85, with threading dislocations forming channels for holes and having a density of 109 - 1011 CM-2; a 0.5 im thick p-type layer made of GaN doped with magnesium (Mg) at a concentration _1018 CM-3 a transparent metallic alloy p-type contact; and an n-type contact deposited on the n-cladding and contact layer after etching.
5. A light emitting diode or a laser diode with direct injection of electrons and holes into active quantum dots through channels in riddled barriers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0003367A GB2359190B (en) | 2000-02-14 | 2000-02-14 | Light emitting devices with riddled barriers for electrons and holes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0003367A GB2359190B (en) | 2000-02-14 | 2000-02-14 | Light emitting devices with riddled barriers for electrons and holes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB0003367D0 GB0003367D0 (en) | 2000-04-05 |
| GB2359190A true GB2359190A (en) | 2001-08-15 |
| GB2359190B GB2359190B (en) | 2004-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0003367A Expired - Fee Related GB2359190B (en) | 2000-02-14 | 2000-02-14 | Light emitting devices with riddled barriers for electrons and holes |
Country Status (1)
| Country | Link |
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| GB (1) | GB2359190B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4786951A (en) * | 1985-02-12 | 1988-11-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor optical element and a process for producing the same |
| JPH10270173A (en) * | 1997-03-27 | 1998-10-09 | Junji Kido | Organic electroluminescent element and its manufacture |
-
2000
- 2000-02-14 GB GB0003367A patent/GB2359190B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4786951A (en) * | 1985-02-12 | 1988-11-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor optical element and a process for producing the same |
| JPH10270173A (en) * | 1997-03-27 | 1998-10-09 | Junji Kido | Organic electroluminescent element and its manufacture |
Non-Patent Citations (1)
| Title |
|---|
| WPI Abstract Accession No 1998-600400 & JP 10 270 173 A * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2359190B (en) | 2004-02-11 |
| GB0003367D0 (en) | 2000-04-05 |
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| Date | Code | Title | Description |
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| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20080214 |