GB2344465B - Method for producing a semiconductor device - Google Patents

Method for producing a semiconductor device

Info

Publication number
GB2344465B
GB2344465B GB0002618A GB0002618A GB2344465B GB 2344465 B GB2344465 B GB 2344465B GB 0002618 A GB0002618 A GB 0002618A GB 0002618 A GB0002618 A GB 0002618A GB 2344465 B GB2344465 B GB 2344465B
Authority
GB
United Kingdom
Prior art keywords
producing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0002618A
Other versions
GB2344465A (en
GB0002618D0 (en
Inventor
Takeo Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP9172866A external-priority patent/JP3063686B2/en
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB0002618D0 publication Critical patent/GB0002618D0/en
Publication of GB2344465A publication Critical patent/GB2344465A/en
Application granted granted Critical
Publication of GB2344465B publication Critical patent/GB2344465B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
GB0002618A 1997-06-13 1998-06-11 Method for producing a semiconductor device Expired - Fee Related GB2344465B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9172866A JP3063686B2 (en) 1997-06-13 1997-06-13 Method for manufacturing semiconductor device
GB9812639A GB2326282B (en) 1997-06-13 1998-06-11 Method for producing a semiconductor device

Publications (3)

Publication Number Publication Date
GB0002618D0 GB0002618D0 (en) 2000-03-29
GB2344465A GB2344465A (en) 2000-06-07
GB2344465B true GB2344465B (en) 2000-11-29

Family

ID=26313845

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0002618A Expired - Fee Related GB2344465B (en) 1997-06-13 1998-06-11 Method for producing a semiconductor device

Country Status (1)

Country Link
GB (1) GB2344465B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419813A (en) * 1980-11-29 1983-12-13 Tokyo Shibaura Denki Kabushiki Kaisha Method for fabricating semiconductor device
US5358891A (en) * 1993-06-29 1994-10-25 Intel Corporation Trench isolation with planar topography and method of fabrication
GB2326526A (en) * 1997-06-16 1998-12-23 Nec Corp Semiconductor devices with trench isolation
US5933748A (en) * 1996-01-22 1999-08-03 United Microelectronics Corp. Shallow trench isolation process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419813A (en) * 1980-11-29 1983-12-13 Tokyo Shibaura Denki Kabushiki Kaisha Method for fabricating semiconductor device
US5358891A (en) * 1993-06-29 1994-10-25 Intel Corporation Trench isolation with planar topography and method of fabrication
US5933748A (en) * 1996-01-22 1999-08-03 United Microelectronics Corp. Shallow trench isolation process
GB2326526A (en) * 1997-06-16 1998-12-23 Nec Corp Semiconductor devices with trench isolation

Also Published As

Publication number Publication date
GB2344465A (en) 2000-06-07
GB0002618D0 (en) 2000-03-29

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040611