GB2331839B - Process and structure for embedded dram - Google Patents

Process and structure for embedded dram

Info

Publication number
GB2331839B
GB2331839B GB9725020A GB9725020A GB2331839B GB 2331839 B GB2331839 B GB 2331839B GB 9725020 A GB9725020 A GB 9725020A GB 9725020 A GB9725020 A GB 9725020A GB 2331839 B GB2331839 B GB 2331839B
Authority
GB
United Kingdom
Prior art keywords
embedded dram
dram
embedded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9725020A
Other versions
GB9725020D0 (en
GB2331839A (en
Inventor
H J Wu
Shih-Wei Sun
Jacob Chen
Tri-Rung Yew
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW086110245A external-priority patent/TW365065B/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9725020A priority Critical patent/GB2331839B/en
Priority to FR9716074A priority patent/FR2766293B1/en
Priority to DE19757490A priority patent/DE19757490A1/en
Publication of GB9725020D0 publication Critical patent/GB9725020D0/en
Publication of GB2331839A publication Critical patent/GB2331839A/en
Application granted granted Critical
Publication of GB2331839B publication Critical patent/GB2331839B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
GB9725020A 1997-07-19 1997-11-26 Process and structure for embedded dram Expired - Fee Related GB2331839B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB9725020A GB2331839B (en) 1997-07-19 1997-11-26 Process and structure for embedded dram
FR9716074A FR2766293B1 (en) 1997-07-19 1997-12-18 METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT COMPRISING BOTH LOGIC CIRCUITS AND AN INCORPORATED DYNAMIC RAM
DE19757490A DE19757490A1 (en) 1997-07-19 1997-12-23 IC production with embedded DRAM circuits and logic circuits on single chip

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW086110245A TW365065B (en) 1997-07-19 1997-07-19 Embedded memory structure and manufacturing method thereof
GB9725020A GB2331839B (en) 1997-07-19 1997-11-26 Process and structure for embedded dram

Publications (3)

Publication Number Publication Date
GB9725020D0 GB9725020D0 (en) 1998-01-28
GB2331839A GB2331839A (en) 1999-06-02
GB2331839B true GB2331839B (en) 1999-10-13

Family

ID=26312661

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9725020A Expired - Fee Related GB2331839B (en) 1997-07-19 1997-11-26 Process and structure for embedded dram

Country Status (3)

Country Link
DE (1) DE19757490A1 (en)
FR (1) FR2766293B1 (en)
GB (1) GB2331839B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004004584A1 (en) * 2004-01-29 2005-08-25 Infineon Technologies Ag Semiconductor memory cell and associated manufacturing method
DE102010003452B4 (en) * 2010-03-30 2018-12-13 Globalfoundries Dresden Module One Llc & Co. Kg A method of manufacturing a semiconductor device having a capacitor formed in the contact plane

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0455338A1 (en) * 1990-04-30 1991-11-06 STMicroelectronics, Inc. Dram cell structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723530B2 (en) * 1988-04-13 1998-03-09 日本電気株式会社 Method for manufacturing dynamic random access memory device
JP2861129B2 (en) * 1989-10-23 1999-02-24 日本電気株式会社 Semiconductor device
JPH03205866A (en) * 1990-01-08 1991-09-09 Sony Corp Memory device
KR960005248B1 (en) * 1991-10-24 1996-04-23 마쯔시다덴기산교 가부시기가이샤 Semiconductor memory cell and the manufacture thereof
US5644151A (en) * 1994-05-27 1997-07-01 Nippon Steel Corporation Semiconductor memory device and method for fabricating the same
KR100388519B1 (en) * 1995-02-22 2003-09-19 마이크론 테크놀로지, 인크. Method for forming a bit line on a capacitor array of a memory cell and an integrated circuit and a semiconductor memory device using the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0455338A1 (en) * 1990-04-30 1991-11-06 STMicroelectronics, Inc. Dram cell structure

Also Published As

Publication number Publication date
FR2766293B1 (en) 2002-01-04
DE19757490A1 (en) 1999-01-28
GB9725020D0 (en) 1998-01-28
FR2766293A1 (en) 1999-01-22
GB2331839A (en) 1999-06-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20091126