GB2323475B - Controlling the generation of hillocks in liquid crystal devices - Google Patents

Controlling the generation of hillocks in liquid crystal devices

Info

Publication number
GB2323475B
GB2323475B GB9813759A GB9813759A GB2323475B GB 2323475 B GB2323475 B GB 2323475B GB 9813759 A GB9813759 A GB 9813759A GB 9813759 A GB9813759 A GB 9813759A GB 2323475 B GB2323475 B GB 2323475B
Authority
GB
United Kingdom
Prior art keywords
hillocks
generation
controlling
liquid crystal
crystal devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9813759A
Other versions
GB9813759D0 (en
GB2323475A (en
Inventor
Hyun Sik Seo
In Woo Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019950042555A external-priority patent/KR0186206B1/en
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of GB9813759D0 publication Critical patent/GB9813759D0/en
Publication of GB2323475A publication Critical patent/GB2323475A/en
Application granted granted Critical
Publication of GB2323475B publication Critical patent/GB2323475B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
GB9813759A 1995-11-21 1996-11-20 Controlling the generation of hillocks in liquid crystal devices Expired - Fee Related GB2323475B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019950042555A KR0186206B1 (en) 1995-11-21 1995-11-21 Liquid crystal display element and its manufacturing method
GB9624157A GB2307597B (en) 1995-11-21 1996-11-20 Controlling the generating of hillocks in liquid crystal devices

Publications (3)

Publication Number Publication Date
GB9813759D0 GB9813759D0 (en) 1998-08-26
GB2323475A GB2323475A (en) 1998-09-23
GB2323475B true GB2323475B (en) 1999-08-11

Family

ID=26310438

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9813759A Expired - Fee Related GB2323475B (en) 1995-11-21 1996-11-20 Controlling the generation of hillocks in liquid crystal devices

Country Status (1)

Country Link
GB (1) GB2323475B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210131508A (en) * 2020-04-23 2021-11-03 삼성디스플레이 주식회사 Display Apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1386268A (en) * 1971-06-30 1975-03-05 Ibm Electrical contact structure
EP0256557A2 (en) * 1986-08-19 1988-02-24 Fujitsu Limited Semiconductor device having thin film wiring layer and method of forming thin wiring layer
EP0395560A2 (en) * 1989-04-17 1990-10-31 International Business Machines Corporation Multilayered intermetallic connection for semiconductor devices
EP0488264A2 (en) * 1990-11-30 1992-06-03 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device with improved electromigration resistance
EP0524754A2 (en) * 1991-07-16 1993-01-27 Nec Corporation A film wiring and a method of its fabrication
US5349205A (en) * 1991-12-02 1994-09-20 Matsushita Electric Industrial Co., Ltd. Thin-film transistor array with anodic oxide for use in a liquid crystal display

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1386268A (en) * 1971-06-30 1975-03-05 Ibm Electrical contact structure
EP0256557A2 (en) * 1986-08-19 1988-02-24 Fujitsu Limited Semiconductor device having thin film wiring layer and method of forming thin wiring layer
EP0395560A2 (en) * 1989-04-17 1990-10-31 International Business Machines Corporation Multilayered intermetallic connection for semiconductor devices
EP0488264A2 (en) * 1990-11-30 1992-06-03 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device with improved electromigration resistance
EP0524754A2 (en) * 1991-07-16 1993-01-27 Nec Corporation A film wiring and a method of its fabrication
US5349205A (en) * 1991-12-02 1994-09-20 Matsushita Electric Industrial Co., Ltd. Thin-film transistor array with anodic oxide for use in a liquid crystal display

Also Published As

Publication number Publication date
GB9813759D0 (en) 1998-08-26
GB2323475A (en) 1998-09-23

Similar Documents

Publication Publication Date Title
GB2307597B (en) Controlling the generating of hillocks in liquid crystal devices
GB2298075B (en) Liquid crystal display
KR100268146B1 (en) Liquid crystal display device
EP0740186A3 (en) Liquid crystal display unit
EP0753784A4 (en) Liquid crystal display device
SG55248A1 (en) Liquid crystal display control device
HK1009185A1 (en) Liquid crystal device
GB9613354D0 (en) Liquid crystal devices
GB9625324D0 (en) Liquid crystal devices
EP0750212A3 (en) Liquid crystal display device
TW572215U (en) Liquid crystal display
GB2306498B (en) Ferroelectric liquid crystal devices
GB9318776D0 (en) Liquid crystal devices
GB2305532B (en) Liquid crystal display
GB2312543B (en) Liquid crystal display device and method of producing the same
SG55256A1 (en) Liquid crystal driving circuit and liquid crystal display system using the same
GB2315903B (en) Liquid crystal devices
EP0793131A4 (en) Liquid crystal display device
GB2274519B (en) Liquid crystal devices
EP0740284A3 (en) Liquid crystal display device
GB9524113D0 (en) Liquid crystal display
GB9613364D0 (en) Liquid crystal devices
GB2306693B (en) Liquid crystal display
GB2299095B (en) Ferroelectric liquid crystal devices
GB2319348B (en) Liquid crystal devices

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20111120