GB2312551A - Encapsulating semiconductor optical devices - Google Patents

Encapsulating semiconductor optical devices Download PDF

Info

Publication number
GB2312551A
GB2312551A GB9708025A GB9708025A GB2312551A GB 2312551 A GB2312551 A GB 2312551A GB 9708025 A GB9708025 A GB 9708025A GB 9708025 A GB9708025 A GB 9708025A GB 2312551 A GB2312551 A GB 2312551A
Authority
GB
United Kingdom
Prior art keywords
carrier
optical module
layer
transmitting
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9708025A
Other versions
GB2312551B (en
GB9708025D0 (en
Inventor
Klaus-Michael Mayer
Wolf-Henning Rech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of GB9708025D0 publication Critical patent/GB9708025D0/en
Publication of GB2312551A publication Critical patent/GB2312551A/en
Application granted granted Critical
Publication of GB2312551B publication Critical patent/GB2312551B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/422—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements
    • G02B6/4221—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements involving a visual detection of the position of the elements, e.g. by using a microscope or a camera
    • G02B6/4224—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements involving a visual detection of the position of the elements, e.g. by using a microscope or a camera using visual alignment markings, e.g. index methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15156—Side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optical Couplings Of Light Guides (AREA)

Description

2312551 Optical module for coupling an optical fibre and method of
producing it State of the art The invention relates to an optical module for coupling an optical fibre with a translucent carrier and a transmitting or receiving element which is applied to a first side of the carrier. The invention also relates to a method of producing such an optical module.
A module of this type is known, for example, from the document DE 43 01456 Cl. The plate-shaped carrier made of silicon described therein is structured precisely by micromechanical production methods so a laser chip serving as a transmission element, an optical fibre and an imaging lens can be positioned with close tolerances. The final adjustment of the optical fibre of the laser chip is clearly simplified owing to the precise structuring. To protect the very sensitive laser chip from external influences. the laser chip is surrounded by a housing-like hennetically sealed arrangement. the carrier being part of the housing.
It is generally necessary 'm any case to install such semiconductor components, which are to be used, in a suitable housing to which the optical fibre is to be optically coupled. The protection of the components from environmental influences and a good optical coupling, in particular, play a decisive part in the design of the housing. The coupling is generally produced by an arrangement of one to two lenses, the position of the optical fibres relative to the lenses and the laser chip being optimised in an adjustment process. The laser chip is arranged in a housmg which is hermetically sealed from the environment, the lenses and the optical fibre being arranged either outside or in the housing. In the latter case, the optical fibre is conveyed from the housing through a hermetic bushing.
2 Scanning units are Imown from the sphere of CD devices, in which only the laser chip together with a photodiode is mounted in a hermetically sealed round housing for the monitoring of performance. This module is in the meantime also used for information transmission. The so-called coaxial housing used is a precision mechanical product made of metal and glass and - measured against the tolerance requirements for the optical coupling between laser and optical fibre in the range of below 1 im - has very considerable production tolerances which is why a complex threedimensional adjustment process is required to optimise the optical fibre coupling.
A drawback of the discussed use of a hermetically sealed housing is, in particular, that the costs incurred are becoming more significant as semiconductor prices fall.
The article Tig-tail Type Laser Modules Entirely Moulded in Plastic" Electronics Letters, 28th September 1995, vol. 3 1, No. 20, pages 1745 to 1747. discloses an arrangement in which a laser diode is protected from environmental influences by a plastic moulding composition. A drawback is that the laser diode is coupled to the glass fibre without imagmg lens by abutment.
Advantages of the invention The method according to the invention with the features of claim 1 has the advantage that an expensive housing hennetically sealing the transmitting or receiving element can be dispensed with without losing protection from environmental influences, for exaniple moisture. Since a translucent layer, for example an optically transparent moulding composition, is applied to the carrier and the transmitting or receiving element, the transmitting or receiving element is sealed from the exterior on the one hand by the carrier itself and on the other hand by the applied layer.
3 A trough-shaped recess is preferably formed on one side of the carrier, into which the transmitting or receiving element is preferably applied by means of a soldered joint, so additional protection is afforded.
A further layer which acts as a moisture barrier is preferably applied to the first layer. By means of this two-layered construction, optimisation of the first layer with respect to the optical effect and of the second layer with respect to the screening effect can be achieved better.
A lens which allows better efficiency of coupling during the coupling of an optical fibre than an abutment is preferably formed on the other side of the carrier.
The optical module according to the invention for coupling an optical fibre having the features of claim 7 also has the advantage that a housing which hermetically seals the transmitting or receiving element is not required. An optically translucent layer which essentially surrounds the transmitting or receiving element and therefore screens it from the exterior does mi fact protect the sensitive transmitting or receiving element. preferably a laser diode, from external environmental influences.
The transmitting or receiving element is preferably arranged in a troughshaped recess, of which the beam path is directed to an oblique wall of the recess and is conveyed to the underside of the carrier via a reflective surface formed in the carrier.
To increase the efficiency of coupling, a lens is preferably provided in the beam path on this underside.
4 In a development of the invention, the transmitting or receiving element, preferably a laser diode, is allocated a monitor photodiode, which is also surrounded by the first layer and by means of which the laser diode can be monitored.
Further advantageous embodiments of the invention will emerge from the remaining sub-claims.
Drawings The invention will now be described m detail with reference to the drawing which relates to an embodiment. The single figure is a schematic sectional view of an optical module.
Description of an embodiment
The figure shows an optical module 1 comprising a carrier plate 3 preferably consisting of silicon.
A trough-shaped recess 7 and a V-shaped groove 9 adjacent thereto are introduced on an upper side 5 of the carrier plate 3 by a wet chemical etching process.
A semiconductor laser diode 13 is placed on a base 11 of the recess 7, a layer of solder 15 being used to produce the connection. The laser diode 13 itself is activated via an electric lead 17 arranged on a contact point 19.
A monitor photodiode 21 is arranged on the upper side 5 of the carrier 3 adjacent to the laser diode 13. The monitor photodiode 21 is orientated relative to an oblique lateral surface 23 of the recess 7 in order thus to be able to absorb light reflected therefrom. However, the monitor photodiode 21 is fastened on the plane upper side 5 of the carrier 3, a layer of solder 25 again being used. A conductive adhesive can obviously also be used instead of the solder. The signals emitted by the photodiode 21 are transmitted via an electric lead 27, connected to the photodiode at a contact point 29, to a subsequent control and evaluating unit, not shown.
The figure also shows a layer 31 which completely surrounds both the photodiode 21 and the laser diode 13. Only the connecting faces to the upper side 5 of the carrier plate 3 do not come into contact with this layer 3 1. The groove 9 is also filled by the layer 3 1.
The layer 3 1 consists of an optically transparent material having a defined optical refractive index which is important for calculating the beam path described hereinafter.
A further layer 33 serving as a moisture barrier is applied to the domeshaped surface of the layer 3 1. This two-layered construction is used whenever the optically transparent layer has inadequate moisture-proofing properties.
The laser diode 13 which is very sensitive to external influences can easily be protected by the two layers 3 1 and 33.
It can also be inferred from the figure that an optical lens 37 which improves the coupling of the laser light into an attached optical fibre is formed on an underside 335 of the carrier plate 3.
An optical module 1 is produced in several stages, a silicon wafer being used as basic material. Recesses 7 and 9 are initially formed by wet chemical etching mi the surface of the carrier plate 3 consisting of silicon, the oblique walls 23 being 6 defined by the crystal direction and their position and size therefore having precision of the order of 1 jum.
The laser diode 13 is then introduced into the recess 7, for which purpose the solder 15 is heated spot-wise, for example with a NdYAG laser.
The laser diode is preferably orientated within the recess 7 in the longitudinal direction on the edge of the transition of an oblique wall 41 into the base 11 of the recess 7. Markings can additionally be provided for adjustment on the upper side 5 of the carrier plate 3.
Before application of the laser diode, a gold layer can additionally be applied to parts of the surface 5 to improve electrical contact with the carrier plate 3. In addition to improving the electrical conductivity, this gold layer - not shown in the figure - acts as a reflector, for example on the oblique wall 23.
The interfaces of the carrier plate 3 at which light enters or issues are provided with a non-reflective layer, for which a quarter wavelength layer having a suitable refractive index deposited over the entire face on both sides 5 and 35 suffices.
When both photodiode 21 and laser diode 13 are applied, the layer 31 is initially applied and then the outer moisture-proofing layer 33.
A lacquer lens, produced by photolithography and melting of the lacquer, is transferred into the silicon to form the lens 37. A further possibifity is to form a lens by etching a trough-shaped recess and self- adjusted introduction of a glass bead. Individual adjustment is unnecessary in both cases, so the adjustment process only takes place once during production of the carrier plate.
7 The individual optical modifies 1 formed on a wafer are finally separated by sawing or breaking. The laser diode 13 is undamaged owing to the layers 3 1 and 3 3 and the recessed arrangement of the laser diode 13. The underside 35 can be protected with a lacquer layer before separation in order to provide protection from impurities.
Additional adjustment marks which serve for pre-orientation during the final optical coupling of the separated modules with the optical fibre arranged, for example, on a similar carrier plate can also be applied on the underside 35 during production so the necessary adjustment process is simplified and accelerated.
Operation of the optical module will now be described briefly hereinafter.
The laser diode 13 emits laser light in a wavelength range above 1100 rim in the direction of the oblique wall 41 of the recess 7. Owing to the optical transparency for this wavelength range of the layer 3 1, the beams reach the wall 41 where they are refi-acted vertically. However, this is conditional on the material of the layer 1 having an appropriate refractive index. The light then propagated within the carrier plate 3, which is also translucent for the specified wavelength range, and impinges on an oblique wall 43 of the V-shaped groove 9. The light is then reflected downwardly there to the underside 35. Once it has passed through the carrier plate 3, it issues at the underside 35. If the laser light is then to be coupled into an optical fibre or to be used as a collimated beam, the lens 37 is ananged at the outlet point.
To monitor operation of the laser diode 13 and to control the output power in the event of temperature changes and ageing, the laser diode 13 irradiates light to the oblique wall 23 at which it is reflected toward the photodiode 2 1.
The material of the layer 31 is particularly important mi this optical module. As already mentioned, it has to have a defined refractive index which is also constant and reproducible. It also has to be free from stray centres caused, for example, by fillers and to have high transparency at the emission wavelength of the laser diode 13. Finally, it is also necessary for the material to have low thermal expansion.
In an embodiment of the invention, not shown, the recess 7 is made in two stages. The laser chip 13 is mounted on the base 11 of the higher stage such that the lightemitting region rests directly on the solder layer (Epi-down mounting). The end face simultaneously rests at the edge of the transition from the higher to the lower stage so light is initially also emitted into the space fined by the layer 3 1 before it passes into the carrier at the oblique lateral wall 41. The distance between the laser diode 13 and the lateral wall 41 can be smaller in this arrangement and this may be advantageous for laser diodes with a large opening angle of emission.
9

Claims (20)

Claims
1. Method of producing an optical module suitable for coupling an optical fibre with at least one transmitting or receiving element which is placed on a first side of a transparent carrier, a beam path extending from the transmitting or receiving element to the opposite side of the carrier, characterised in that an optically transparent layer which surrounds at least the transmitting or receiving element is applied.
2. Method according to claim 1, characterised in that a preferably troughshaped recess into which the transmitting or receiving element is inserted is formed on the first side of the carrier.
3. Method according to claim 1 or 2, characterised in that a further layer (33) which serves as a moisture barrier is applied to the optically transparent layer (3 1).
4. Method according to one of the preceding claims, characterised in that the transmitting or receiving element is connected to the carrier by a solder layer.
5. Method according to one of the preceding claims, characterised in that a lacquer lens is transferred into the carrier on the second side (35) of the carrier (3), the lacquer lens being produced by a photolithographic process and subsequent melting of the lacquer.
6. Method according to claim 2, characterised in that the recess is produced by a wet chemical etching process.
7. Optical module for coupling an optical fibre, with a translucent carrier (3) and a transmitting or receiving element (13) which is applied to a first side (5) of the carrier (3), characterised by an optically parent layer (3 1) which surrounds at least the transmitting or receivmig element ( 13).
8. Optical module according to claim 7, characterised in that the carrier (3) has, on the first side, at least one preferably trough-shaped recess (7) into which the transmitting or receiving element (13) is introduced, the beam path of the transmitting or receiving element being directed to an oblique lateral wall (4 1) of the recess (7).
9. Optical module according to claim 6 or 7, characterised in that adjacent to the oblique lateral wall (41) of the recess (7) there is provided a preferably Vshaped groove (9) of which one wall (43) lies in the beam path as a reflective face.
10. Optical module according to one of claims 6 to 9, characterised in that a lens (37) is provided on a second side (35) of the carrier (3) opposite the first side.
11. Optical module according to one of claims 7 to 10, characterised in that a flirther layer (33) which acts as a moisture barrier is formed on the external surface of the first layer (3 1).
12. Optical module according to one of claims 7 to 11, characterised in that the material of the carrier (3) is silicon.
13. Optical module according to one of claims 7 to 12, characterised in that the material of the first layer (3 1) is organic.
14. Optical module according to one of claims 7 to 13, characterised in that the transmitting or receiving element is a semiconductor laser diode which emits light m the wavelength range above 1100 run.
IS. Optical module according to claim 14, characterised in that the laser diode (13) emits light in an opening angle of 10 to 5T.
16. Optical module according to claim 14 or 15, characterised in that the laser diode (13) is allocated a monitor photodiode (2 1) which is formed on the first side (5) of the carrier (3) and is also surrounded by the first layer (3 1), for the monitoring thereof.
17. Optical module according to one of claims 7 to 16, characterised in that marldngs are formed on the first and/or second side for adjustment.
18. Optical module according to one of claims 7 to 17, characterised in that the first and/or second side of the carrier (3) is provided with a non-reflective layer.
19. Method of producing an optical module substantially as hereinbefore described with reference to the accompanying drawing.
20. Optical module substantially as hereinbefore described with reference to the accompanying drawmig.
GB9708025A 1996-04-27 1997-04-21 Optical module for coupling an optical fibre and method of producing it Expired - Fee Related GB2312551B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19616969A DE19616969A1 (en) 1996-04-27 1996-04-27 Optical assembly for coupling an optical waveguide and method for producing the same

Publications (3)

Publication Number Publication Date
GB9708025D0 GB9708025D0 (en) 1997-06-11
GB2312551A true GB2312551A (en) 1997-10-29
GB2312551B GB2312551B (en) 1998-09-23

Family

ID=7792687

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9708025A Expired - Fee Related GB2312551B (en) 1996-04-27 1997-04-21 Optical module for coupling an optical fibre and method of producing it

Country Status (3)

Country Link
DE (1) DE19616969A1 (en)
FR (1) FR2748123A1 (en)
GB (1) GB2312551B (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000041281A1 (en) * 1998-12-30 2000-07-13 Honeywell Inc. Method and apparatus for hermetically sealing photonic devices
US6488417B2 (en) 1999-12-07 2002-12-03 Infineon Technologies Ag Opto-electronic assembly having an integrated imaging system
US6792178B1 (en) 2000-01-12 2004-09-14 Finisar Corporation Fiber optic header with integrated power monitor
US6793405B1 (en) 1998-08-05 2004-09-21 Seiko Epson Corporation Optical module
US6969204B2 (en) 2002-11-26 2005-11-29 Hymite A/S Optical package with an integrated lens and optical assemblies incorporating the package
GB2419229A (en) * 2004-10-13 2006-04-19 Agilent Technologies Inc Laser Arrangement
US7078671B1 (en) 2001-08-06 2006-07-18 Shipley Company, L.L.C. Silicon optical microbench devices and wafer-level testing thereof
US7208725B2 (en) 1998-11-25 2007-04-24 Rohm And Haas Electronic Materials Llc Optoelectronic component with encapsulant
US7329056B2 (en) 2003-09-15 2008-02-12 Rohm And Haas Electronic Materials Llc Device package and methods for the fabrication and testing thereof
CN100391066C (en) * 2003-09-19 2008-05-28 安华高科技光纤Ip（新加坡）私人有限公司 Integrated photoelectronic device
US10319654B1 (en) 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages
US10684389B2 (en) 2015-08-21 2020-06-16 Stmicroelectronics (Research & Development) Limited Molded range and proximity sensor with optical resin lens
EP4024628A4 (en) * 2019-08-29 2023-10-25 Kyocera Corporation Optical element mounting package, electronic device, and electronic module

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19810624A1 (en) * 1998-03-12 1999-09-16 Bosch Gmbh Robert Electro-optical module
EP1097483A2 (en) * 1998-06-30 2001-05-09 Robert Bosch Gmbh Device for detecting electromagnetic radiation
DE19845484C2 (en) * 1998-10-02 2002-09-26 Infineon Technologies Ag Micro-optical component and method for its production
US6920168B1 (en) * 2000-02-22 2005-07-19 Triquint Technology Holding Co. Optical assembly
EP1146570A1 (en) * 2000-04-14 2001-10-17 Infineon Technologies AG Semiconductor light emitting device and method for the manufacture of a carrier
DE10032796A1 (en) * 2000-06-28 2002-01-17 Infineon Technologies Ag optomodule
FR2977715A1 (en) 2011-07-08 2013-01-11 St Microelectronics Grenoble 2 OPTICAL ELECTRONIC HOUSING
FR2977714B1 (en) * 2011-07-08 2013-07-26 St Microelectronics Grenoble 2 OPTICAL ELECTRONIC HOUSING
FR2988519A1 (en) 2012-03-22 2013-09-27 St Microelectronics Grenoble 2 OPTICAL ELECTRONIC HOUSING
DE102022106941A1 (en) 2022-03-24 2023-09-28 Ams-Osram International Gmbh OPTOELECTRONIC SEMICONDUCTOR LASER COMPONENT

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0081827A2 (en) * 1981-12-11 1983-06-22 Sanyo Electric Co., Ltd. Semiconductor optical logic device
US5226052A (en) * 1990-05-08 1993-07-06 Rohm, Ltd. Laser diode system for cutting off the environment from the laser diode
EP0690515A1 (en) * 1994-06-30 1996-01-03 Eastman Kodak Company Optoelectronic assembly and methods for producing and using the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH651939A5 (en) * 1979-08-27 1985-10-15 Int Standard Electric Corp Optical beam splitter
EP0355522B1 (en) * 1988-08-18 1993-12-15 Seiko Epson Corporation Solid state image pickup device
ES2105050T3 (en) * 1992-11-25 1997-10-16 Bosch Gmbh Robert ARRANGEMENT FOR THE COUPLING OF END OF GUIDES OF WAVES OF LIGHT TO ELEMENTS OF EMISSION OR RECEPTION.
DE4323828C2 (en) * 1993-07-16 1995-12-14 Ant Nachrichtentech Arrangement for coupling at least one optical fiber end to an optoelectronic transmitter or receiver module
US5384873A (en) * 1993-10-04 1995-01-24 Motorola, Inc. Optical interface unit and method of making

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0081827A2 (en) * 1981-12-11 1983-06-22 Sanyo Electric Co., Ltd. Semiconductor optical logic device
US5226052A (en) * 1990-05-08 1993-07-06 Rohm, Ltd. Laser diode system for cutting off the environment from the laser diode
EP0690515A1 (en) * 1994-06-30 1996-01-03 Eastman Kodak Company Optoelectronic assembly and methods for producing and using the same

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6793405B1 (en) 1998-08-05 2004-09-21 Seiko Epson Corporation Optical module
US7348550B2 (en) 1998-11-25 2008-03-25 Rohm And Haas Electronic Materials Llc Optoelectronic component with front to side surface electrical conductor
US7781727B2 (en) 1998-11-25 2010-08-24 Nuvotronics, Llc Optoelectronic component comprising an encapsulant
US7355166B2 (en) 1998-11-25 2008-04-08 Rohm And Haas Electronic Materials Llc Optoelectronic component having electrical connection and formation method thereof
US7208725B2 (en) 1998-11-25 2007-04-24 Rohm And Haas Electronic Materials Llc Optoelectronic component with encapsulant
US7288758B2 (en) 1998-11-25 2007-10-30 Rohm And Haas Electronic Materials Llc Wafer-level optoelectronic device substrate
US7288756B2 (en) 1998-11-25 2007-10-30 Rohm And Haas Electronic Materials Llc Optoelectronic component having passively aligned optoelectronic device
US7291833B2 (en) 1998-11-25 2007-11-06 Rohm And Haas Electronic Materials Llc Optoelectronic component
US6588949B1 (en) 1998-12-30 2003-07-08 Honeywell Inc. Method and apparatus for hermetically sealing photonic devices
WO2000041281A1 (en) * 1998-12-30 2000-07-13 Honeywell Inc. Method and apparatus for hermetically sealing photonic devices
US6488417B2 (en) 1999-12-07 2002-12-03 Infineon Technologies Ag Opto-electronic assembly having an integrated imaging system
US6792178B1 (en) 2000-01-12 2004-09-14 Finisar Corporation Fiber optic header with integrated power monitor
US7078671B1 (en) 2001-08-06 2006-07-18 Shipley Company, L.L.C. Silicon optical microbench devices and wafer-level testing thereof
CN100383574C (en) * 2002-11-26 2008-04-23 许密特有限公司 Photoelectric package with an integrated lens
US6969204B2 (en) 2002-11-26 2005-11-29 Hymite A/S Optical package with an integrated lens and optical assemblies incorporating the package
US9647420B2 (en) 2003-09-15 2017-05-09 Nuvotronics, Inc. Package and methods for the fabrication and testing thereof
US9817199B2 (en) 2003-09-15 2017-11-14 Nuvotronics, Inc Device package and methods for the fabrication and testing thereof
US7329056B2 (en) 2003-09-15 2008-02-12 Rohm And Haas Electronic Materials Llc Device package and methods for the fabrication and testing thereof
US7888793B2 (en) 2003-09-15 2011-02-15 Nuvotronics, Llc Device package and methods for the fabrication and testing thereof
US8993450B2 (en) 2003-09-15 2015-03-31 Nuvotronics, Llc Device package and methods for the fabrication and testing thereof
US9410799B2 (en) 2003-09-15 2016-08-09 Nuvotronics, Inc. Device package and methods for the fabrication and testing thereof
CN100391066C (en) * 2003-09-19 2008-05-28 安华高科技光纤Ip（新加坡）私人有限公司 Integrated photoelectronic device
GB2419229B (en) * 2004-10-13 2009-08-19 Agilent Technologies Inc Laser arrangement and related manufacturing method
GB2419229A (en) * 2004-10-13 2006-04-19 Agilent Technologies Inc Laser Arrangement
US10684389B2 (en) 2015-08-21 2020-06-16 Stmicroelectronics (Research & Development) Limited Molded range and proximity sensor with optical resin lens
US11137517B2 (en) 2015-08-21 2021-10-05 Stmicroelectronics (Research & Development) Limited Molded range and proximity sensor with optical resin lens
US11693149B2 (en) 2015-08-21 2023-07-04 Stmicroelectronics (Research & Development) Limited Molded range and proximity sensor with optical resin lens
US10319654B1 (en) 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages
US10553511B2 (en) 2017-12-01 2020-02-04 Cubic Corporation Integrated chip scale packages
EP4024628A4 (en) * 2019-08-29 2023-10-25 Kyocera Corporation Optical element mounting package, electronic device, and electronic module

Also Published As

Publication number Publication date
GB2312551B (en) 1998-09-23
FR2748123A1 (en) 1997-10-31
GB9708025D0 (en) 1997-06-11
DE19616969A1 (en) 1997-10-30

Similar Documents

Publication Publication Date Title
GB2312551A (en) Encapsulating semiconductor optical devices
KR100225212B1 (en) Holographic optical isolator utilizing opto-electronic transmitter disposed in a package
EP0450560B1 (en) An optical device
US5479540A (en) Passively aligned bi-directional optoelectronic transceiver module assembly
US6970491B2 (en) Planar and wafer level packaging of semiconductor lasers and photo detectors for transmitter optical sub-assemblies
US6969204B2 (en) Optical package with an integrated lens and optical assemblies incorporating the package
US5309460A (en) Semiconductor laser with encapsulated lead members
US6351027B1 (en) Chip-mounted enclosure
US20060124946A1 (en) Optical transmitter
KR100489147B1 (en) Optical module
US10754108B2 (en) Optical subassembly, method for manufacturing optical subassembly, and optical module
US6097521A (en) Optoelectronic module for bidirectional optical data transmission
US6781209B1 (en) Optoelectronic component with thermally conductive auxiliary carrier
KR19990083227A (en) Optic semiconductor device and optic semiconductor module mounting optic semiconductor device
CN102047444A (en) Semiconductor component, reflected-light barrier and method for producing a housing therefor
US5940550A (en) Electrooptical module
JPH10111439A (en) Optoelectronic module
JPH10321900A (en) Optical module
JPH1065079A (en) Package assembly for optical transmitter and its manufacturing method
US7500792B2 (en) Optoelectronic transmitting and/or receiving arrangement
US4741595A (en) Optical transmission device
USRE38280E1 (en) Optoelectronic module for bidirectional optical data transmission
JP2000321018A (en) Optical displacement detector
US6990262B2 (en) Optical module
US6341027B1 (en) Module for optical communication

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20010421