GB2297507A - Electrical interconnection assembly - Google Patents

Electrical interconnection assembly Download PDF

Info

Publication number
GB2297507A
GB2297507A GB9601257A GB9601257A GB2297507A GB 2297507 A GB2297507 A GB 2297507A GB 9601257 A GB9601257 A GB 9601257A GB 9601257 A GB9601257 A GB 9601257A GB 2297507 A GB2297507 A GB 2297507A
Authority
GB
United Kingdom
Prior art keywords
substrate
solder
solder bumps
wettable
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9601257A
Other versions
GB9601257D0 (en
Inventor
Zequn Mel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of GB9601257D0 publication Critical patent/GB9601257D0/en
Publication of GB2297507A publication Critical patent/GB2297507A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/264—Bi as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
    • H01R43/0242—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections comprising means for controlling the temperature, e.g. making use of the curie point
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13113—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0101—Neon [Ne]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/043—Reflowing of solder coated conductors, not during connection of components, e.g. reflowing solder paste
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1216—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by screen printing or stencil printing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

Solder bumps are formed on a substrate including solder wettable regions by positioning a mask of non wettable material over the substrate then loading it with a solder paste of composition bismuth-tin-X, where X is a compound of silver or indium, and then reflowing the solder to form solder bumps on the substrate before removing the mask. The preferred solder alloy is tin-48%, silver or indium-0.5 to 2.0%, bismuth-50 to 51.5%.

Description

2297507 ELECTRICAL INTERCONNECTION ASSEMBLY The invention relates to a
method of forming solder bumps on a substrate for use in electrical interconnection assemblies and, for example, to a lead-free alloy of bismuth-tin- and a third metal, said alloy demonstrating the behaviour of a ternary eutectic and providing a one hundred percent increase in ductility over eutectic tin-bismuth solder.
Assembly of electronic components requires electrical connection, and connection has typically required solder of one sort or another.
Low temperature solders arc useful in decreasing re-flow temperature in electronic assembly process. Low temperature as used herein refer to soldering alloys with melting points below that of 63Sn-37Pb (eutectic) alloy. Reflow temperature for 63Sn-)7Pb solder occurs at 220 C. The use of low temperature solder in electronic assembly decreases the reflow temperature. Benefits of lower temperature reflow include: 1) reducing cost for temperature sensitive components 2) reducing the risk of thermal shock due to the difference in coefficients of thermal expansion amonest substrate. solder and various components; 3) providing options for hierarchical assembly. Solders without lead reduce environmental hazards. Furthermore, as components and connections continue to shrink, the electronic packaging industry is increasingly requiring solder capable of functioning not only as a electrical connection but as a mechanical support as well.
The 58Bi-42Sn (bismuth-tin) alloy has limited applications in electronic packaging. Although it demonstrates greater strength and creep resistance than 63Sn-37Pb. it's usefulness is severely compromised because of its poor ductility and fatigue resistance. The poor ductility and fatigue resistance of 58Bi-42-Sn alloy greatly limits its usefulness in electronic packaging and assembly because the resulting assembly cannot suitably withstand the rigors is of being packed and shipped. Thus, products in which electronic components connections are soldered with 58Bi-42Sn are not sufficiently reliable, especially for today's demanding consumer and competitive markets.
It has been reported that a mixture of bismuth-tin solder pastes has been applied to a surface electroplated with gold or silver and during the reflow (which occurs at a temperature higher than the melting temperature of the bismuth-tin), the electroplated metal dissolves. forming the connection (Melton et al, US pat no. 5,320,272). It has been asserted that the connection thus formed demonstrates increased hardness. thereby improving the ability of the connection to withstand the temperature excursions experienced by electronic packages during use. However. increase in strength alone increases brittleness resulting in short fatigue lifetime or early fatigue. The eutectic Bi-Sn demonstrates adequate strength and creep resistance, however falls short in terms or needed ductility and fatigue resistence. ne optimal connection demonstrates the mechanical properties of increased fatigue lifetime (time during operation) and increased ductility (ability to withstand lateral shearing). Furthermore, the process for forming such a connection should minimize hazards to the immediate worker environment as w ell as harmonizing with the environment as a whole. It is also desirable that the alloy composed of three metals behave as a ternary eutectic or as a "nearternary" eutectic for the purpose of electronic assembly.
3 The present invention seeks to provide improved electrical interconnections between substrates.
According to an aspect of the present invention, there is provided a method of forming solder bumps directly on a substrate including a plurality of wettable regions, comprising the steps of. positioning a nonwettable metal mask on the substrate such that a plurality of apertures in the mask align with the regions; applying solder paste chosen from the group of bismuth-tin-X, where X is a compound selected from the group consisting substantially of silver and indium, to the metal mask such that the solder paste loads the mask apertures; reflowing the solder paste to form solder bumps on the regions; and removing the metal mask after formation of the solder bumps.
According to another aspect of the present invention, there is provided an alloy consisting substantially of the following elements by weight: tin: about 48%, silver or indium: from 0.5 to 2.0%, bismuth: the remainder (from 50 to 51.5 %).
The alloy and solder composition taught herein is lead free, has a low melting temperature and has advantageous mechanical characteristics making it a useful composition for both electrical connection and mechanical support.
There is provided a new formula for an alloy, more particularly for an alloy with applications in electronic assembly and packaging.
4 The preferred embodiment includes a solder paste formed from the metal powder of a ternary alloy. The alloy includes essentially three constituent elements: bismuth, tin, and a third metal, chosen from the group consisting of indium and silver. The ternary metal is present in a relatively small amount by weight, less than two (2) percent. The bismuth and tin are present in the amounts, by weight, 'Me alloy formed from the three constituent elements behaves as a ternary or near-ternary eutectic and melts at a single temperature point or in a narrow temperature range, at approximately 136137 degrees Centigrade. The eutectic characteristic of the alloy permits the reduction of heating during electronic assembly (less heat for a shorter duration) enabling the selection of components not otherwise usable because of inability to withstand elevated temperatures otherwise necessary to melt solder. Such components are almost always less expensive than their counterparts specifically designed of materials capable of withstanding higher temperatures. The eutectic characteristic of the alloy taught herein also permits the lowest viscosity, and low viscosity facilitates wave soldering. Further, excellant results are expected from the new alloy in other solder techniques, including a connective solder bumping process known to the inventive entity as "contained paste deposition" (CPD). CPD utilizes the stenciling of solder paste onto the wettable regions of a substrate by squeegeeing paste into the pre-aligned apertures of a special mask. heating the mask-substrate -paste assembly, and remoVing the mask after solder-ball formation. CPD eliminates electroplating and all the associated paraphernalia in favor of a clean, quick, solder bumping procedure. The resulting assembled circuitry employing the alloy demonstrates on the order of a one hundred percent increase in fatigue lifetime and ductility, translating into more robust interconnections capable of withstanding the mechanical stress associated with packing and shipping as well as the thermal and other stresses of operation.
is An embodiment of the present invention is described below, by way of example only, with reference to the accompanying drawings, in which:
FIG. I shows the result of shear testing of solder joints made of two alloys (58Bi-42Sn and 50Bi-42Sn-2Ag) between copper plates conducted at three temperatures and a strain rate of 0.01 second; FIG. 2 shows the result of shear testing of solder joints made of two alloys (58Bi-42Sn and 50Bi-48Sn-2Ag) between copper plates conducted at three temperatures and a strain rate of 0.001 second"; FIG. 3, including 3A through 3H illustrate the CPD bumping method utilizing the alloy taught herein; FIG. 4 is a flow chart of the bump formation method representing an application of the alloy taught herein; FIG. 5 illustrates the assembling of the mask upon the substrate in a preferred embodiment.
FIG. 6 illustrates actual and calculated eutectic transition temperatures of tin-bismuth-silver alloy.
It is to be understood that ranges and other values given herein can be modified or extended without losing the effects sought, as will be apparent to the skilled reader from the teachings herein.
In a preferred embodiment. a paste is employed to form a lead-free ternary or near-ternary eutectic alloy connection for creating electrical interconnections on and between substrates.
The alloy paste forms a connection that physically attaches and electrically connects two substrates. providing mechanical support as well as electrical interconnection.
A preferred paste can be made from the metal powder of the desired alloy. The desired alloy is formed from essentlallv the following component elements: tin (48% by weight) bismuth (50 to 51.5% by weight) and silver or, alternativeiv. indium (0.5 to 1.5% by weight). The supplier of the alloy in paste form was Indium Corporation of America.
6 In alternate embodiments. indiurn can be substituted for silver, as can gold. The percentage by weight of tin remains about 48% although a range is possible (47-49%); the combined proportion of bismuth and the tertiary element can vary, with the tertiary element preferably varying from aboutO.5 to 2.0 percent. and the balance made up with bismuth. The upper limit for the tertiary element is about 4 percent because higher percentages may compromise the ductility of the resulting alloy. Thus, experiments to date show the best ductility at about 50Bi-48Sn-2Ag. Similar results are expected with indium. Experiments have shown that the preferred embodiment yields an alloy demonstrating the characteristics of a ternary eutectic as calculated by NIST (see FIG 6).
FIG 1 and 2 illustrate the results of shear tests of solder joints made of two allovS, 52Bi-42Sn and 50Bi-48Sn-2Ag, between copper plates at three temperatures. (20,65 and 110 degrees Centigrade) and at two strain rates (0.01 second"' and 0.001 second", respectively). The ductility values (where ductility is seen as the amount of strain sustained before solder joint separation) of the alloy taught herein is significantly greater than 52Bi-42Sn in virtually all test conditions. It is expected that experimental results of fatigue lifetime will demonstrate an increase in fatigue lifetime of one hundred percent. It is expected that similar results will be obtained form connection where the third metal is indium.
In a preferred embodiment, referring to FIG 3A through 33H.
there are formed electrically conductive connective structures including bumps, capable of connecting one substrate to another such that electric impulses flow between said substrates.
As outlined in Figure 4, the alloy used in CPD method generally includes the steps selecting 410 a substrate, mask and paste (in this case, the alloy taught herein); assembling 412 the substrate and mask: aligning 414 the substrate-mask, depositing 416 the paste: reflowing 422 the substratemaskpaste; removing 424 the mask; cleaning 430 the mask; reusing the mask in another repetition of the process. Alternativelv, in some sub-methods. the mask is not removed. Moreover, all the methodological variations including 7 intermediate inspection 418,426 and touch-up 420,428 steps to ensure uniform thickness of solder paste deposition and ball placement. If a non- wettable surface is used. then. rather than a bumped substrate, soldcr balls of controlled volume are generated.
Figure 3A through 3H inclusive illustrates the alloy as used in flip chip formation and flip chip assembly. The selected substrate 320 having a surface 321 or active side selected for the formation of electrical interconnections to which wettable or solderable regions 322 or solderable bump limiting metal (BLM) regions having been attached. In the preferred embodiment, the substrate chosen is a silicon wafer with a BLM that is wettable by the alloy to be deposited. Silicon wafer with zincated pads (Al pads treated with electroless Zn, Ni, then Au plated), and passivated with SiN (silicon nitride) is the substrate/BLM combination of the preferred embodiment. It is simple and effective to prepare a wafer with solderable (or wettable) BLMs on a pitch of 400 microns or less. The center-to-center distance between each wettable BLM corresponds to the pitch of the bumps; the preferred embodiment provides for pitches in the range of 150 to 350 microns. This minimum pitch limitation is currently a function of mask technology, and even smaller pitches are achievable with the described method as a result of thp Jmprovements in a mask fabrication technology provided.
The remaining regions of the substrate surface 3321 must be nonwettable regions 324 (for example. regions of the substrate covered by nonwettable materials, such as polyimide. silicon nitride, or, silicon dioxide). In the preferred embodiment for 50 Bi-48Sn-2Ag bumps, the silicon wafer has wettable regions of Ni-Au and non-wettable regions of silicon nitride.
Next, the entire substrate 320, mask 326 and solder 334 assembly is heated in order that the solder 334 reflows (see Figure 3C). That is to say, it is heated until the solder paste metal spheres 334 metal and coalesce into a single sphere or solder bump 3338, one bump 338 per mask aperture 330.
The reflow process in contained paste deposition is almost identical to that used for standard surface mount processes (SMT). In order to promote 8 the coalescence of the metal powder to form metal bumps, three well understood time-temperature regions s4muld he naintaimd in a ref:Lcw pmfile:
1. Solvent evaporation: Solvents are added to the solder paste to control the squeegeeing portion of the process. These solvents must evaporate during the reflow operation (prior to the metal melting). Various solder paste formulations will require different temperatures and times.
1. Flux activation: In order to coalesce the metal powder into a single metal bump as well as form a metallurgical bond to the under-bump metallization, the temperature of the solder paste and substrate must be held for a specific length of time at a prescribed temperature to allow the activators in the solder paste to remove the metal oxides from both the under-bump metallizations and the surface of each of the individual metal particles. It is expected that the flux activation temperature with 5OBi-48Sn-2Ag is less than 130 degrees Centigrade. Other solder paste formulations require different temperatures and times.
3. Maximum temperature: General reflow soldering practices recommend that the maximum solder temperature should be between 30 and 50 degrees C above the melting point of the solder powder. For the eutectic or near-eutectic alloy taught herein, the maximum temperature of the reflow is between 155 and 170 degrees Centigrade. Other metal alloys have different melting points which require the use of different maximum temperatures.
The maximum temperature change rate varies slightly from a normal surface mount assembly process. In a normal surface mount reflow process, the maximum temperature change rate is dictated by the ability of certain surface mount components to survive the rapid temperature changes. In contained paste deposition, the maximum temperature change rate is 9 determined by the requirement that the mask and the substrate change temperature at the same rate.
After bumps are formed during the reflow process and the assembly is cooled. portions of the solder paste flux vehicle remain (residues) and may cause the mask 326 to adhere to the substrate 320. These residues are dissolved by soaking the mask and substrate in an appropriate solvent. In the initial embodiment, a mixture of 50% isopropyl alcohol and 50% water dissolves the residues and allows the mask to be removed from the substrate. After separation, the substrate and the mask are more thoroughly cleaned. After cleaning, the mask is returned to the start of the process for re-use on another substrate.
The alloy taught herein has, amongst its advantages, low viscosity and increased ductility, making it desireable in other methods of forming electrical interconnections now known or to be developed.
The disclosures in United States patent application no. 08/381,381, from which this application claims priority, and in the abstract accompanying this application are incorporated herein by reference.
C1

Claims (13)

1. A method of forming solder bumps directly on a substrate including a plurality of wettable regions, comprising the steps of- positioning a non-wettable metal mask on the substrate such that a plurality of apertures in the mask align with the regions; applying solder paste chosen from the group of bismuth-tin-X, where X is a compound selected from the group consisting substantially of silver and indium, to the metal mask such that the solder paste loads the mask apertures; reflowing the solder paste to form solder bumps on the regions; and removing the metal mask after formation of the solder bumps.
2. A method according to claim 1, wherein x is present in an amount effective to decrease the melting temperature of the interconnect from the melting temperature of eutectic tin-bismuth.
3. A method according to claim 1 or 2, wherein the solder paste is chosen in amounts by weight of between 50:48:2 and 51.5:48:0.5.
4. A method according to any preceding claim, wherein the solder bumps are formed to have pitches in the range of 150 to 350 n-licrometres.
5. A method of forming an electrical interconnection assembly comprising the steps of providing a first substrate and a second substrate, 4D each including a surface with predefined wettable and non-wettable regions; forming solder bumps on the wettable regions of the first substrate by a method according to any preceding claim; and locatincg, the surface of the I first substrate substantially parallel to the surface of the second substrate such that the solder bumps formed on the first substrate register with the wettable regions on the surface of the second substrate and that, in the presence of heating, reflow to form an electrical connection between the first and second substrate.
6. A method of electrically connecting a first substrate including a plurality of wettable pads to a second substrate having a plurality of wettable pads, comprising the steps of: forming solder bumps on the first substrate by a method according to any one of claims I to 4; positioning the solder bumps formed on the first substrate in registry with the wettable pads of the second substrate; and reflowing the solder bumps to fon-n an electrical interconnection between the first substrate and the second substrate.
7. An electrical connection assembly including first and second substrates coupled together electrically by a method according to claim 5.
8. An alloy consisting substantially of the following elements by weight:
tin: about 48 % silver or indium: from 0.5 to 2.0% bismuth: the remainder (from 50 to 51.5 %).
9. An alloy as in claim 8, wherein the ductility of the alloy is greater than double that of eutectic tin-bismuth.
10. A method of forming a ternary eutectic solder bumps on a substrate substantially as hereinbefore described with reference to and as illustrated in the accompanying drawings.
12
11. A method of forming an electrical interconnection assembly substantially as hereinbefore described with reference to and as illustrated in the accompanying drawings.
12. A method of electrically connecting together first and second substrates substantially as hereinbefore described with reference to and as illustrated in the accompanying drawings.
13. An electrical interconnection assembly substantially as hereinbefore described with reference to and as illustrated in the accompanying drawings.
GB9601257A 1995-01-31 1996-01-23 Electrical interconnection assembly Withdrawn GB2297507A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38138195A 1995-01-31 1995-01-31

Publications (2)

Publication Number Publication Date
GB9601257D0 GB9601257D0 (en) 1996-03-27
GB2297507A true GB2297507A (en) 1996-08-07

Family

ID=23504818

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9601257A Withdrawn GB2297507A (en) 1995-01-31 1996-01-23 Electrical interconnection assembly

Country Status (3)

Country Link
JP (1) JPH08264916A (en)
DE (1) DE19542043A1 (en)
GB (1) GB2297507A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10103390A1 (en) * 2001-01-26 2002-08-22 Bosch Gmbh Robert Production of ring-like solder joint between two components comprises preparing two surfaces, applying solder to surface of one component surface, joining components, and fusing solder to form solder joint

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5755896A (en) * 1996-11-26 1998-05-26 Ford Motor Company Low temperature lead-free solder compositions
US5833921A (en) * 1997-09-26 1998-11-10 Ford Motor Company Lead-free, low-temperature solder compositions
DE10117404A1 (en) * 2001-04-06 2002-10-17 Paff Stannol Loetmittel Wave soldering process used in the production of printed circuit boards comprises using a lead-free solder having a lower melting point than a usual tin-lead solder, and a fluxing agent having no-clean properties
KR100716434B1 (en) 2006-04-17 2007-05-10 주식회사 파이컴 Method of bonding probes and method of manufacturing a probe card
US7745321B2 (en) 2008-01-11 2010-06-29 Qimonda Ag Solder contacts and methods of forming same
US7973417B2 (en) 2008-04-18 2011-07-05 Qimonda Ag Integrated circuit and method of fabricating the same
DE102008031836A1 (en) * 2008-07-05 2010-01-21 Deutsche Cell Gmbh solder contact
CN112490137A (en) * 2020-11-30 2021-03-12 安徽光智科技有限公司 Preparation method of focal plane flip interconnection indium column

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4832255A (en) * 1988-07-25 1989-05-23 International Business Machines Corporation Precision solder transfer method and means
GB2257386A (en) * 1991-06-24 1993-01-13 Tani Denki Kogyo Kk Solder screen printing apparatus
WO1994027777A1 (en) * 1993-06-01 1994-12-08 Motorola Inc. Tin-bismuth solder paste and method of use

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4832255A (en) * 1988-07-25 1989-05-23 International Business Machines Corporation Precision solder transfer method and means
GB2257386A (en) * 1991-06-24 1993-01-13 Tani Denki Kogyo Kk Solder screen printing apparatus
WO1994027777A1 (en) * 1993-06-01 1994-12-08 Motorola Inc. Tin-bismuth solder paste and method of use

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10103390A1 (en) * 2001-01-26 2002-08-22 Bosch Gmbh Robert Production of ring-like solder joint between two components comprises preparing two surfaces, applying solder to surface of one component surface, joining components, and fusing solder to form solder joint
DE10103390B4 (en) * 2001-01-26 2005-09-22 Robert Bosch Gmbh Method and system for producing a substantially annular solder joint

Also Published As

Publication number Publication date
JPH08264916A (en) 1996-10-11
DE19542043A1 (en) 1996-08-01
GB9601257D0 (en) 1996-03-27

Similar Documents

Publication Publication Date Title
Kang et al. Lead (Pb)-free solders for electronic packaging
US6010060A (en) Lead-free solder process
US5730932A (en) Lead-free, tin-based multi-component solder alloys
US7182241B2 (en) Multi-functional solder and articles made therewith, such as microelectronic components
EP0629463B1 (en) Lead-free, high-temperature, tin based multi-component solder
US6307160B1 (en) High-strength solder interconnect for copper/electroless nickel/immersion gold metallization solder pad and method
US5411703A (en) Lead-free, tin, antimony, bismtuh, copper solder alloy
US6176947B1 (en) Lead-free solders
JPH071179A (en) Lead-free tin - bismuth solder
JPH09108884A (en) Soldering paste composition
WO2002087297A1 (en) Electronic apparatus
KR19990028259A (en) Electronic Components and Electronic Circuit Boards Mounted by Solder and Soldering
TWI681063B (en) Mixed alloy solder paste
JPH08164495A (en) Leadless solder for connecting organic substrate, and mounted substrate using it
KR20120102803A (en) Lead-free solder joint structure and solder ball
JP4791685B2 (en) Conductive ball, electrode structure, method of forming electrode of electronic component, electronic component and electronic device
US20040241039A1 (en) High temperature lead-free solder compositions
GB2297507A (en) Electrical interconnection assembly
US6214131B1 (en) Mixed solder pastes for low-temperature soldering process
JP3460438B2 (en) Lead-free solder and mounted products using it
Villain et al. Properties and reliability of SnZn-based lead-free solder alloys
US7078330B2 (en) Metal electrode and bonding method using the metal electrode
Jung et al. Alternative solders for flip chip applications in the automotive environment
JP3460442B2 (en) Lead-free solder and mounted products using it
JP2002086294A (en) Solder alloy and electronic member having solder ball and solder bump

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)